Abstract
The effects of substrate heating and substrate biasing on the initial stage of nonepitaxial heterogeneous growth of TiN on Si(111) was studied using high-resolution transmission electron microscopy. The TiN thin films were deposited using dc reactive magnetron sputtering. It was observed that the higher ion energy causes loosely bound ions on the surface of the grains to be resputtered resulting in a denser film structure. It was shown that the different effects of room temperature and substrate bias voltage on TiN initial growth resulted in different textures at a film thickness of 50 nm.
| Original language | English |
|---|---|
| Pages (from-to) | 2512-2516 |
| Number of pages | 5 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 21 |
| Issue number | 6 |
| Publication status | Published - 2003 Nov |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Surfaces and Interfaces
- Physics and Astronomy (miscellaneous)
Cite this
Effects of substrate heating and biasing on nanostructural evolution of nonepitaxially grown TiN nanofilms. / Li, T. Q.; Noda, Suguru; Okada, F.; Komiyama, H.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 6, 11.2003, p. 2512-2516.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Effects of substrate heating and biasing on nanostructural evolution of nonepitaxially grown TiN nanofilms
AU - Li, T. Q.
AU - Noda, Suguru
AU - Okada, F.
AU - Komiyama, H.
PY - 2003/11
Y1 - 2003/11
N2 - The effects of substrate heating and substrate biasing on the initial stage of nonepitaxial heterogeneous growth of TiN on Si(111) was studied using high-resolution transmission electron microscopy. The TiN thin films were deposited using dc reactive magnetron sputtering. It was observed that the higher ion energy causes loosely bound ions on the surface of the grains to be resputtered resulting in a denser film structure. It was shown that the different effects of room temperature and substrate bias voltage on TiN initial growth resulted in different textures at a film thickness of 50 nm.
AB - The effects of substrate heating and substrate biasing on the initial stage of nonepitaxial heterogeneous growth of TiN on Si(111) was studied using high-resolution transmission electron microscopy. The TiN thin films were deposited using dc reactive magnetron sputtering. It was observed that the higher ion energy causes loosely bound ions on the surface of the grains to be resputtered resulting in a denser film structure. It was shown that the different effects of room temperature and substrate bias voltage on TiN initial growth resulted in different textures at a film thickness of 50 nm.
UR - http://www.scopus.com/inward/record.url?scp=0942289259&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0942289259&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0942289259
VL - 21
SP - 2512
EP - 2516
JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
SN - 1071-1023
IS - 6
ER -