Effects of substrate heating and biasing on nanostructural evolution of nonepitaxially grown TiN nanofilms

T. Q. Li, Suguru Noda, F. Okada, H. Komiyama

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The effects of substrate heating and substrate biasing on the initial stage of nonepitaxial heterogeneous growth of TiN on Si(111) was studied using high-resolution transmission electron microscopy. The TiN thin films were deposited using dc reactive magnetron sputtering. It was observed that the higher ion energy causes loosely bound ions on the surface of the grains to be resputtered resulting in a denser film structure. It was shown that the different effects of room temperature and substrate bias voltage on TiN initial growth resulted in different textures at a film thickness of 50 nm.

Original languageEnglish
Pages (from-to)2512-2516
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number6
Publication statusPublished - 2003 Nov
Externally publishedYes

Fingerprint

Heating
heating
Substrates
Reactive sputtering
Ions
High resolution transmission electron microscopy
Bias voltage
Magnetron sputtering
Film thickness
magnetron sputtering
ions
film thickness
textures
Textures
Thin films
transmission electron microscopy
causes
high resolution
electric potential
room temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

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AU - Komiyama, H.

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AB - The effects of substrate heating and substrate biasing on the initial stage of nonepitaxial heterogeneous growth of TiN on Si(111) was studied using high-resolution transmission electron microscopy. The TiN thin films were deposited using dc reactive magnetron sputtering. It was observed that the higher ion energy causes loosely bound ions on the surface of the grains to be resputtered resulting in a denser film structure. It was shown that the different effects of room temperature and substrate bias voltage on TiN initial growth resulted in different textures at a film thickness of 50 nm.

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