The effects of substrate heating and substrate biasing on the initial stage of nonepitaxial heterogeneous growth of TiN on Si(111) was studied using high-resolution transmission electron microscopy. The TiN thin films were deposited using dc reactive magnetron sputtering. It was observed that the higher ion energy causes loosely bound ions on the surface of the grains to be resputtered resulting in a denser film structure. It was shown that the different effects of room temperature and substrate bias voltage on TiN initial growth resulted in different textures at a film thickness of 50 nm.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2003 Nov 1|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering