Effects of Thermal History on Residual Order of Thermally Grown Silicon Dioxide

Kosuke Tatsumura, Takanobu Watanabe, Daisuke Yamasaki, Takayoshi Shimura, Masataka Umeno, Iwao Ohdomari

    Research output: Contribution to journalArticle

    18 Citations (Scopus)

    Abstract

    By simulation of silicon oxidation and measurement of X-ray crystal-truncation-rod (CTR) scattering, the structures of silicon dioxide films grown at different temperatures and the structural changes due to thermal annealing have been investigated. Large-scale SiO22/Si(001) models were formed by introducing oxygen atoms, atom-by-atom, in crystalline Si from the surfaces. Molecular dynamics (MD) calculation at a constant temperature was repeatedly carried out for the growing oxide model. The intensity and position of the extra diffraction peak observed for the oxide, correlating with the residual order emanating from the parent Si crystal, depend on the growth temperature and change after thermal annealing. The peak intensity becomes smaller with increasing growth temperature. Thermal annealing monotonically decreases the peak intensity and shifts the position along the CTR, toward the lower angle side. There is a good agreement between the results of simulation and experiment. It is shown that (1) the oxide grown at a higher temperature has a lower degree of residual order, (2) thermal annealing decreases the residual order, ultimately leads to complete amorphization and never restores the ordering, and (3) the peak shift along the CTR corresponds to the volumetric expansion of the SiO: in the surface-normal direction.

    Original languageEnglish
    Pages (from-to)7250-7255
    Number of pages6
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume42
    Issue number12
    Publication statusPublished - 2003 Dec

    Fingerprint

    Silica
    histories
    Annealing
    silicon dioxide
    Crystals
    annealing
    rods
    Growth temperature
    Atoms
    Oxides
    crystals
    oxides
    approximation
    temperature
    Amorphization
    shift
    Temperature
    atoms
    Molecular dynamics
    oxygen atoms

    Keywords

    • Growth temperature
    • Oxidation
    • Residual order
    • Silicon
    • Simulation
    • Thermal annealing
    • X-ray CTR scattering

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Effects of Thermal History on Residual Order of Thermally Grown Silicon Dioxide. / Tatsumura, Kosuke; Watanabe, Takanobu; Yamasaki, Daisuke; Shimura, Takayoshi; Umeno, Masataka; Ohdomari, Iwao.

    In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 42, No. 12, 12.2003, p. 7250-7255.

    Research output: Contribution to journalArticle

    Tatsumura, Kosuke ; Watanabe, Takanobu ; Yamasaki, Daisuke ; Shimura, Takayoshi ; Umeno, Masataka ; Ohdomari, Iwao. / Effects of Thermal History on Residual Order of Thermally Grown Silicon Dioxide. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2003 ; Vol. 42, No. 12. pp. 7250-7255.
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