Efficient hole generation above 1019 cm-3 in Mg-doped in GaN/GaN superlattices at room temperature

Kazuhide Kumakura, Toshiki Makimoto, Naoki Kobayashi

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Abstract

We achieved spatially averaged hole concentrations above 1019 cm-3 at room temperature in Mg-doped InxGa1-xN/GaN (4 nm/4 nm) superlattices grown by metalorganic vapor phase epitaxy. The hole concentrations for the InxGa1-xN /GaN superlattices increased with the In mole fraction, and the maximum hole concentration reached 2.8 × 1019 cm-3 for the In0.22Ga0.78N/GaN superlattice. The hole concentrations for the superlattices are larger than those for the InGaN bulk layers with the same average In mole fraction. The weak temperature dependence of the resistivities for InGaN/GaN superlattices with higher In mole fractions indicates highly efficient hole generation in the superlattice.

Original languageEnglish
Pages (from-to)L195-L196
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume39
Issue number3 A/B
DOIs
Publication statusPublished - 2000 Mar 15

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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