EFFICIENT SI PLANAR DOPING IN GaAs BY FLOW-RATE MODULATION EPITAXY.

Naoki Kobayashi, Toshiki Makimoto, Yoshiji Horikoshi

Research output: Chapter in Book/Report/Conference proceedingChapter

44 Citations (Scopus)

Abstract

During the growth of GaAs layers by flow-rate modulation epitaxy (FME), triethyl gallium and arsine are alternately supplied on the GaAs substrate. Thus, the Ga atomic surface and As atomic surface appear alternately at the growing surface. These atomic surfaces exhibit very different characteristics in capturing impurity atoms. By supplying 10% silane diluted with hydrogen gas at a flow-rate of 20 cc/min for one second, we have succeeded in obtaining extremely high Si planar doping levels with the maximum sheet carrier density of 1. 1 multiplied by 10**1**3 cm** minus **2 occurring at the low growth temperature of 550 degree C.

Original languageEnglish
Title of host publicationJapanese Journal of Applied Physics, Part 2: Letters
Pages746-748
Number of pages3
Volume25
Edition9
Publication statusPublished - 1986 Sep
Externally publishedYes

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Epitaxial growth
Flow rate
Modulation
Growth temperature
Gallium
Silanes
Carrier concentration
Doping (additives)
Impurities
Atoms
Hydrogen
Substrates
Gases

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kobayashi, N., Makimoto, T., & Horikoshi, Y. (1986). EFFICIENT SI PLANAR DOPING IN GaAs BY FLOW-RATE MODULATION EPITAXY. In Japanese Journal of Applied Physics, Part 2: Letters (9 ed., Vol. 25, pp. 746-748)

EFFICIENT SI PLANAR DOPING IN GaAs BY FLOW-RATE MODULATION EPITAXY. / Kobayashi, Naoki; Makimoto, Toshiki; Horikoshi, Yoshiji.

Japanese Journal of Applied Physics, Part 2: Letters. Vol. 25 9. ed. 1986. p. 746-748.

Research output: Chapter in Book/Report/Conference proceedingChapter

Kobayashi, N, Makimoto, T & Horikoshi, Y 1986, EFFICIENT SI PLANAR DOPING IN GaAs BY FLOW-RATE MODULATION EPITAXY. in Japanese Journal of Applied Physics, Part 2: Letters. 9 edn, vol. 25, pp. 746-748.
Kobayashi N, Makimoto T, Horikoshi Y. EFFICIENT SI PLANAR DOPING IN GaAs BY FLOW-RATE MODULATION EPITAXY. In Japanese Journal of Applied Physics, Part 2: Letters. 9 ed. Vol. 25. 1986. p. 746-748
Kobayashi, Naoki ; Makimoto, Toshiki ; Horikoshi, Yoshiji. / EFFICIENT SI PLANAR DOPING IN GaAs BY FLOW-RATE MODULATION EPITAXY. Japanese Journal of Applied Physics, Part 2: Letters. Vol. 25 9. ed. 1986. pp. 746-748
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