Electric field induced recombination centers in GaAs

Atsushi Kawaharazuka, Kenji Shiraishi, Yoshiji Horikoshi

Research output: Contribution to journalArticle

Abstract

We investigated the lateral electric field effect in a GaAs/AlGaAs single quantum well and in AlGaAs and GaAs single layers. We observed the quenching of photoluminescence spectra at low temperatures even when the electric field was much lower than that required for the dissociation of the excitons. To explain this phenomenon we propose a model of new recombination center formation by considering the displacement of charged atoms. We also performed theoretical calculations. By ab initio calculations, we found that a meta-stable state exists when negatively charged Ga atoms are displaced to the interstitial sites. The calculated potential barrier height from the stable state to the meta-stable state was as high as 0.5 eV. However, the meta-stable to stable transition barrier height was only 0.05 eV. These results are consistent with the experimental results.

Original languageEnglish
Pages (from-to)1622-1625
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume37
Issue number3 SUPPL. B
Publication statusPublished - 1998 Mar

Keywords

  • Deep trap
  • Electric field induced defect
  • Lattice relaxation
  • PL quenching

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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