Electric-field-induced resistance switching universally observed in transition-metal-oxide thin films

M. Hamaguchi, K. Aoyama, S. Asanuma, Y. Uesu, Takuro Katsufuji

    Research output: Contribution to journalArticle

    77 Citations (Scopus)

    Abstract

    We show that polarity-dependent, nonvolatile resistance switching by electric field occurs in the thin film of various transition-metal oxides in almost the same manner. This result indicates that, contrary to the general acceptance, perovskite manganite is by no means a special compound for this phenomenon. It is also suggested that the resistance switching is not dominated by a detailed electronic structure of each sample, but dominated by a more general origin, e.g., crystalline defect.

    Original languageEnglish
    Article number142508
    JournalApplied Physics Letters
    Volume88
    Issue number14
    DOIs
    Publication statusPublished - 2006 Apr 3

    Fingerprint

    metal oxides
    transition metals
    electric fields
    thin films
    acceptability
    polarity
    electronic structure
    defects

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Electric-field-induced resistance switching universally observed in transition-metal-oxide thin films. / Hamaguchi, M.; Aoyama, K.; Asanuma, S.; Uesu, Y.; Katsufuji, Takuro.

    In: Applied Physics Letters, Vol. 88, No. 14, 142508, 03.04.2006.

    Research output: Contribution to journalArticle

    @article{505fed37550646f18c61ee7c8dd8c404,
    title = "Electric-field-induced resistance switching universally observed in transition-metal-oxide thin films",
    abstract = "We show that polarity-dependent, nonvolatile resistance switching by electric field occurs in the thin film of various transition-metal oxides in almost the same manner. This result indicates that, contrary to the general acceptance, perovskite manganite is by no means a special compound for this phenomenon. It is also suggested that the resistance switching is not dominated by a detailed electronic structure of each sample, but dominated by a more general origin, e.g., crystalline defect.",
    author = "M. Hamaguchi and K. Aoyama and S. Asanuma and Y. Uesu and Takuro Katsufuji",
    year = "2006",
    month = "4",
    day = "3",
    doi = "10.1063/1.2193328",
    language = "English",
    volume = "88",
    journal = "Applied Physics Letters",
    issn = "0003-6951",
    publisher = "American Institute of Physics Publising LLC",
    number = "14",

    }

    TY - JOUR

    T1 - Electric-field-induced resistance switching universally observed in transition-metal-oxide thin films

    AU - Hamaguchi, M.

    AU - Aoyama, K.

    AU - Asanuma, S.

    AU - Uesu, Y.

    AU - Katsufuji, Takuro

    PY - 2006/4/3

    Y1 - 2006/4/3

    N2 - We show that polarity-dependent, nonvolatile resistance switching by electric field occurs in the thin film of various transition-metal oxides in almost the same manner. This result indicates that, contrary to the general acceptance, perovskite manganite is by no means a special compound for this phenomenon. It is also suggested that the resistance switching is not dominated by a detailed electronic structure of each sample, but dominated by a more general origin, e.g., crystalline defect.

    AB - We show that polarity-dependent, nonvolatile resistance switching by electric field occurs in the thin film of various transition-metal oxides in almost the same manner. This result indicates that, contrary to the general acceptance, perovskite manganite is by no means a special compound for this phenomenon. It is also suggested that the resistance switching is not dominated by a detailed electronic structure of each sample, but dominated by a more general origin, e.g., crystalline defect.

    UR - http://www.scopus.com/inward/record.url?scp=33646673155&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=33646673155&partnerID=8YFLogxK

    U2 - 10.1063/1.2193328

    DO - 10.1063/1.2193328

    M3 - Article

    AN - SCOPUS:33646673155

    VL - 88

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    IS - 14

    M1 - 142508

    ER -