Electric properties of metal/diamond interfaces utilizing hydrogen-terminated surfaces of homoepitaxial diamonds

Makoto Aoki, Hiroshi Kawarada

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    55 Citations (Scopus)

    Abstract

    As-grown homoepitaxial diamond surfaces fabricated by chemical vapor deposition are terminated by hydrogen, and are expected to have a low density of surface states. On such diamond surfaces, high-quality Schottky contacts have been obtained utilizing metals with low electronegativities, such as Al or Pb. The ideality factors of those point contacts to diamond are less than 1.1, which is the nearest value to unity ever reported in diamonds. Quantitative measurements of Schottky barrier heights at various metal contacts have also been performed. A strong correlation between the barrier heights and the metal electronegativities is observed. Even an ohmic property is obtained when metals with higher electronegativities were used. The effect of Fermi level pinning is reduced at the interfaces between metals and hydrogen-terminated diamonds.

    Original languageEnglish
    JournalJapanese Journal of Applied Physics, Part 2: Letters
    Volume33
    Issue number5 B
    Publication statusPublished - 1994

    Fingerprint

    Diamonds
    Electric properties
    Electronegativity
    diamonds
    Hydrogen
    hydrogen
    Metals
    metals
    electric contacts
    Point contacts
    Surface states
    Fermi level
    unity
    Chemical vapor deposition
    vapor deposition

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    @article{d037a08c4dda46cd914601f0bfb6a152,
    title = "Electric properties of metal/diamond interfaces utilizing hydrogen-terminated surfaces of homoepitaxial diamonds",
    abstract = "As-grown homoepitaxial diamond surfaces fabricated by chemical vapor deposition are terminated by hydrogen, and are expected to have a low density of surface states. On such diamond surfaces, high-quality Schottky contacts have been obtained utilizing metals with low electronegativities, such as Al or Pb. The ideality factors of those point contacts to diamond are less than 1.1, which is the nearest value to unity ever reported in diamonds. Quantitative measurements of Schottky barrier heights at various metal contacts have also been performed. A strong correlation between the barrier heights and the metal electronegativities is observed. Even an ohmic property is obtained when metals with higher electronegativities were used. The effect of Fermi level pinning is reduced at the interfaces between metals and hydrogen-terminated diamonds.",
    author = "Makoto Aoki and Hiroshi Kawarada",
    year = "1994",
    language = "English",
    volume = "33",
    journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
    issn = "0021-4922",
    publisher = "Japan Society of Applied Physics",
    number = "5 B",

    }

    TY - JOUR

    T1 - Electric properties of metal/diamond interfaces utilizing hydrogen-terminated surfaces of homoepitaxial diamonds

    AU - Aoki, Makoto

    AU - Kawarada, Hiroshi

    PY - 1994

    Y1 - 1994

    N2 - As-grown homoepitaxial diamond surfaces fabricated by chemical vapor deposition are terminated by hydrogen, and are expected to have a low density of surface states. On such diamond surfaces, high-quality Schottky contacts have been obtained utilizing metals with low electronegativities, such as Al or Pb. The ideality factors of those point contacts to diamond are less than 1.1, which is the nearest value to unity ever reported in diamonds. Quantitative measurements of Schottky barrier heights at various metal contacts have also been performed. A strong correlation between the barrier heights and the metal electronegativities is observed. Even an ohmic property is obtained when metals with higher electronegativities were used. The effect of Fermi level pinning is reduced at the interfaces between metals and hydrogen-terminated diamonds.

    AB - As-grown homoepitaxial diamond surfaces fabricated by chemical vapor deposition are terminated by hydrogen, and are expected to have a low density of surface states. On such diamond surfaces, high-quality Schottky contacts have been obtained utilizing metals with low electronegativities, such as Al or Pb. The ideality factors of those point contacts to diamond are less than 1.1, which is the nearest value to unity ever reported in diamonds. Quantitative measurements of Schottky barrier heights at various metal contacts have also been performed. A strong correlation between the barrier heights and the metal electronegativities is observed. Even an ohmic property is obtained when metals with higher electronegativities were used. The effect of Fermi level pinning is reduced at the interfaces between metals and hydrogen-terminated diamonds.

    UR - http://www.scopus.com/inward/record.url?scp=0028441655&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0028441655&partnerID=8YFLogxK

    M3 - Article

    VL - 33

    JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    SN - 0021-4922

    IS - 5 B

    ER -