Electrical and emitting properties of organic electroluminescent diodes with nanostructured cathode buffer-layers of Al/Alq3 ultrathin films

Kazunari Shinbo; Eigo Sakai; Futao Kaneko; Keizo Kato; Takahiro Kawakami; Toyoyasu Tadokoro; Shinichi Ohta; Rigoberto C. Advincula

Electrical and emitting properties of organic electroluminescent diodes with nanostructured cathode buffer-layers of Al/Alq3 ultrathin films

Kazunari Shinbo, Eigo Sakai, Futao Kaneko^*, Keizo Kato, Takahiro Kawakami, Toyoyasu Tadokoro, Shinichi Ohta, Rigoberto C. Advincula

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Organic light emitting diodes (OLEDs) containing nanostructured cathode buffer layers were fabricated, and their electrical and emitting properties were investigated. The OLEDs have an ITO anode/CuPc/TPD/Alq3/buffer layer/Al cathode structure with the buffer layers made from nanostructured alternating layers Alq3 and Al. The driving voltage and the efficiency of the devices were improved by insertion of the buffer layer. It was estimated that some modulations of the Schottky barrier at the Alq3 and the Al cathode interface were induced due to the insertion of the buffer layer and it caused an enhancement of electron injection from the Al cathode.

Original language	English
Pages (from-to)	1233-1238
Number of pages	6
Journal	IEICE Transactions on Electronics
Volume	E85-C
Issue number	6
Publication status	Published - 2002
Externally published	Yes

Keywords

Alq3
Buffer layer
Organic light emitting diode (OLED)
Schottky barrier
TPD

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "Electrical and emitting properties of organic electroluminescent diodes with nanostructured cathode buffer-layers of Al/Alq3 ultrathin films",

abstract = "Organic light emitting diodes (OLEDs) containing nanostructured cathode buffer layers were fabricated, and their electrical and emitting properties were investigated. The OLEDs have an ITO anode/CuPc/TPD/Alq3/buffer layer/Al cathode structure with the buffer layers made from nanostructured alternating layers Alq3 and Al. The driving voltage and the efficiency of the devices were improved by insertion of the buffer layer. It was estimated that some modulations of the Schottky barrier at the Alq3 and the Al cathode interface were induced due to the insertion of the buffer layer and it caused an enhancement of electron injection from the Al cathode.",

keywords = "Alq3, Buffer layer, Organic light emitting diode (OLED), Schottky barrier, TPD",

author = "Kazunari Shinbo and Eigo Sakai and Futao Kaneko and Keizo Kato and Takahiro Kawakami and Toyoyasu Tadokoro and Shinichi Ohta and Advincula, {Rigoberto C.}",

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language = "English",

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number = "6",

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TY - JOUR

T1 - Electrical and emitting properties of organic electroluminescent diodes with nanostructured cathode buffer-layers of Al/Alq3 ultrathin films

AU - Shinbo, Kazunari

AU - Sakai, Eigo

AU - Kaneko, Futao

AU - Kato, Keizo

AU - Kawakami, Takahiro

AU - Tadokoro, Toyoyasu

AU - Ohta, Shinichi

AU - Advincula, Rigoberto C.

PY - 2002

Y1 - 2002

N2 - Organic light emitting diodes (OLEDs) containing nanostructured cathode buffer layers were fabricated, and their electrical and emitting properties were investigated. The OLEDs have an ITO anode/CuPc/TPD/Alq3/buffer layer/Al cathode structure with the buffer layers made from nanostructured alternating layers Alq3 and Al. The driving voltage and the efficiency of the devices were improved by insertion of the buffer layer. It was estimated that some modulations of the Schottky barrier at the Alq3 and the Al cathode interface were induced due to the insertion of the buffer layer and it caused an enhancement of electron injection from the Al cathode.

AB - Organic light emitting diodes (OLEDs) containing nanostructured cathode buffer layers were fabricated, and their electrical and emitting properties were investigated. The OLEDs have an ITO anode/CuPc/TPD/Alq3/buffer layer/Al cathode structure with the buffer layers made from nanostructured alternating layers Alq3 and Al. The driving voltage and the efficiency of the devices were improved by insertion of the buffer layer. It was estimated that some modulations of the Schottky barrier at the Alq3 and the Al cathode interface were induced due to the insertion of the buffer layer and it caused an enhancement of electron injection from the Al cathode.

KW - Alq3

KW - Buffer layer

KW - Organic light emitting diode (OLED)

KW - Schottky barrier

KW - TPD

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Electrical and emitting properties of organic electroluminescent diodes with nanostructured cathode buffer-layers of Al/Alq3 ultrathin films

Abstract

Keywords

ASJC Scopus subject areas

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