Abstract
Organic light emitting diodes (OLEDs) containing nanostructured cathode buffer layers were fabricated, and their electrical and emitting properties were investigated. The OLEDs have an ITO anode/CuPc/TPD/Alq3/buffer layer/Al cathode structure with the buffer layers made from nanostructured alternating layers Alq3 and Al. The driving voltage and the efficiency of the devices were improved by insertion of the buffer layer. It was estimated that some modulations of the Schottky barrier at the Alq3 and the Al cathode interface were induced due to the insertion of the buffer layer and it caused an enhancement of electron injection from the Al cathode.
| Original language | English |
|---|---|
| Pages (from-to) | 1233-1238 |
| Number of pages | 6 |
| Journal | IEICE Transactions on Electronics |
| Volume | E85-C |
| Issue number | 6 |
| Publication status | Published - 2002 |
| Externally published | Yes |
Keywords
- Alq3
- Buffer layer
- Organic light emitting diode (OLED)
- Schottky barrier
- TPD
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Shinbo, K., Sakai, E., Kaneko, F., Kato, K., Kawakami, T., Tadokoro, T., Ohta, S., & Advincula, R. C. (2002). Electrical and emitting properties of organic electroluminescent diodes with nanostructured cathode buffer-layers of Al/Alq3 ultrathin films. IEICE Transactions on Electronics, E85-C(6), 1233-1238.