Abstract
Electrical and optical properties in Cd+ singly and Cd+ + P+ dually implanted GaAs have been investigated. Samples were annealed by a furnace and characterized by the Van der Pauw method at room temperature and photoluminescence (PL) measurement at 2 K. It is found that a higher activation efficiency of the Cd impurities could be obtained by coimplantation of phosphorous ions. The optimum condition is that Cd+ ions and P+ ions are implanted with the same concentration for high dose implantation. In PL spectra, the intensity of the conduction band to Cd acceptor transition, (e, Cd), in the Cd+ implanted sample increases with increasing phosphorous concentration, which is consistent with the electrical results. PL spectra at the long wavelength region measured by a germanium detector show that P+ ion coimplantation does not produce any deep levels in GaAs. All the results indicate that phosphorous is an ideal species for coimplantation.
| Original language | English |
|---|---|
| Pages (from-to) | 433-436 |
| Number of pages | 4 |
| Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
| Volume | 127-128 |
| Publication status | Published - 1997 May |
| Externally published | Yes |
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ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Instrumentation
- Surfaces and Interfaces
Cite this
Electrical and optical characterization of Cd+ and P+ dually ion-implanted GaAs. / Shen, H. L.; Fang, X. H.; Jiang, D. S.; Makita, Y.; Kimura, S.; Obara, A.; Shima, T.; Iida, T.; Kotani, M.; Kobayashi, Naoto.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 127-128, 05.1997, p. 433-436.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electrical and optical characterization of Cd+ and P+ dually ion-implanted GaAs
AU - Shen, H. L.
AU - Fang, X. H.
AU - Jiang, D. S.
AU - Makita, Y.
AU - Kimura, S.
AU - Obara, A.
AU - Shima, T.
AU - Iida, T.
AU - Kotani, M.
AU - Kobayashi, Naoto
PY - 1997/5
Y1 - 1997/5
N2 - Electrical and optical properties in Cd+ singly and Cd+ + P+ dually implanted GaAs have been investigated. Samples were annealed by a furnace and characterized by the Van der Pauw method at room temperature and photoluminescence (PL) measurement at 2 K. It is found that a higher activation efficiency of the Cd impurities could be obtained by coimplantation of phosphorous ions. The optimum condition is that Cd+ ions and P+ ions are implanted with the same concentration for high dose implantation. In PL spectra, the intensity of the conduction band to Cd acceptor transition, (e, Cd), in the Cd+ implanted sample increases with increasing phosphorous concentration, which is consistent with the electrical results. PL spectra at the long wavelength region measured by a germanium detector show that P+ ion coimplantation does not produce any deep levels in GaAs. All the results indicate that phosphorous is an ideal species for coimplantation.
AB - Electrical and optical properties in Cd+ singly and Cd+ + P+ dually implanted GaAs have been investigated. Samples were annealed by a furnace and characterized by the Van der Pauw method at room temperature and photoluminescence (PL) measurement at 2 K. It is found that a higher activation efficiency of the Cd impurities could be obtained by coimplantation of phosphorous ions. The optimum condition is that Cd+ ions and P+ ions are implanted with the same concentration for high dose implantation. In PL spectra, the intensity of the conduction band to Cd acceptor transition, (e, Cd), in the Cd+ implanted sample increases with increasing phosphorous concentration, which is consistent with the electrical results. PL spectra at the long wavelength region measured by a germanium detector show that P+ ion coimplantation does not produce any deep levels in GaAs. All the results indicate that phosphorous is an ideal species for coimplantation.
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M3 - Article
VL - 127-128
SP - 433
EP - 436
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
ER -