Electrical and optical characterization of Cd+ and P+ dually ion-implanted GaAs

H. L. Shen*, X. H. Fang, D. S. Jiang, Y. Makita, S. Kimura, A. Obara, T. Shima, T. Iida, M. Kotani, Naoto Kobayashi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Electrical and optical properties in Cd+ singly and Cd+ + P+ dually implanted GaAs have been investigated. Samples were annealed by a furnace and characterized by the Van der Pauw method at room temperature and photoluminescence (PL) measurement at 2 K. It is found that a higher activation efficiency of the Cd impurities could be obtained by coimplantation of phosphorous ions. The optimum condition is that Cd+ ions and P+ ions are implanted with the same concentration for high dose implantation. In PL spectra, the intensity of the conduction band to Cd acceptor transition, (e, Cd), in the Cd+ implanted sample increases with increasing phosphorous concentration, which is consistent with the electrical results. PL spectra at the long wavelength region measured by a germanium detector show that P+ ion coimplantation does not produce any deep levels in GaAs. All the results indicate that phosphorous is an ideal species for coimplantation.

Original languageEnglish
Pages (from-to)433-436
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Publication statusPublished - 1997 May
Externally publishedYes

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces


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