Electrical and optical characterization of Cd+ and P+ dually ion-implanted GaAs

H. L. Shen, X. H. Fang, D. S. Jiang, Y. Makita, S. Kimura, A. Obara, T. Shima, T. Iida, M. Kotani, Naoto Kobayashi

Research output: Contribution to journalArticle

Abstract

Electrical and optical properties in Cd+ singly and Cd+ + P+ dually implanted GaAs have been investigated. Samples were annealed by a furnace and characterized by the Van der Pauw method at room temperature and photoluminescence (PL) measurement at 2 K. It is found that a higher activation efficiency of the Cd impurities could be obtained by coimplantation of phosphorous ions. The optimum condition is that Cd+ ions and P+ ions are implanted with the same concentration for high dose implantation. In PL spectra, the intensity of the conduction band to Cd acceptor transition, (e, Cd), in the Cd+ implanted sample increases with increasing phosphorous concentration, which is consistent with the electrical results. PL spectra at the long wavelength region measured by a germanium detector show that P+ ion coimplantation does not produce any deep levels in GaAs. All the results indicate that phosphorous is an ideal species for coimplantation.

Original languageEnglish
Pages (from-to)433-436
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume127-128
Publication statusPublished - 1997 May
Externally publishedYes

Fingerprint

Ions
Photoluminescence
photoluminescence
ions
Germanium
Electron transitions
Conduction bands
furnaces
germanium
implantation
conduction bands
Electric properties
Furnaces
Optical properties
Chemical activation
electrical properties
activation
Impurities
Detectors
optical properties

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Electrical and optical characterization of Cd+ and P+ dually ion-implanted GaAs. / Shen, H. L.; Fang, X. H.; Jiang, D. S.; Makita, Y.; Kimura, S.; Obara, A.; Shima, T.; Iida, T.; Kotani, M.; Kobayashi, Naoto.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 127-128, 05.1997, p. 433-436.

Research output: Contribution to journalArticle

Shen, H. L. ; Fang, X. H. ; Jiang, D. S. ; Makita, Y. ; Kimura, S. ; Obara, A. ; Shima, T. ; Iida, T. ; Kotani, M. ; Kobayashi, Naoto. / Electrical and optical characterization of Cd+ and P+ dually ion-implanted GaAs. In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 1997 ; Vol. 127-128. pp. 433-436.
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AU - Shen, H. L.

AU - Fang, X. H.

AU - Jiang, D. S.

AU - Makita, Y.

AU - Kimura, S.

AU - Obara, A.

AU - Shima, T.

AU - Iida, T.

AU - Kotani, M.

AU - Kobayashi, Naoto

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AB - Electrical and optical properties in Cd+ singly and Cd+ + P+ dually implanted GaAs have been investigated. Samples were annealed by a furnace and characterized by the Van der Pauw method at room temperature and photoluminescence (PL) measurement at 2 K. It is found that a higher activation efficiency of the Cd impurities could be obtained by coimplantation of phosphorous ions. The optimum condition is that Cd+ ions and P+ ions are implanted with the same concentration for high dose implantation. In PL spectra, the intensity of the conduction band to Cd acceptor transition, (e, Cd), in the Cd+ implanted sample increases with increasing phosphorous concentration, which is consistent with the electrical results. PL spectra at the long wavelength region measured by a germanium detector show that P+ ion coimplantation does not produce any deep levels in GaAs. All the results indicate that phosphorous is an ideal species for coimplantation.

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