Abstract
Metalorganic vapor phase epitaxy of InP with extremely low V/III ratios less than 10 was successfully carried out by using tertiarybutylphosphine, and detailed electrical and optical properties were investigated for the first time. Featureless surface morphology was obtained even with a V/III ratio of as low as 3. Good electrical properties, such as carrier concentrations of about 6×1014 cm-3 and electron Hall mobilities more than 30 000 cm2/V s measured at 77 K were confirmed, although both Van der Pauw and low-temperature photoluminescence results proved the increased acceptor concentrations in the low V/III ratio range.
| Original language | English |
|---|---|
| Pages (from-to) | 882-884 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 62 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 1993 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Horita, M., Suzuki, M., & Matsushima, Y. (1993). Electrical and optical properties of InP grown by metalorganic vapor phase epitaxy with extremely low V/III ratios using tertiarybutylphosphine. Applied Physics Letters, 62(8), 882-884. https://doi.org/10.1063/1.108554