Electrical and optical properties of InP grown by metalorganic vapor phase epitaxy with extremely low V/III ratios using tertiarybutylphosphine

M. Horita; M. Suzuki; Yuichi Matsushima

doi:10.1063/1.108554

Electrical and optical properties of InP grown by metalorganic vapor phase epitaxy with extremely low V/III ratios using tertiarybutylphosphine

M. Horita, M. Suzuki, Yuichi Matsushima

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7 Citations (Scopus)

Abstract

Metalorganic vapor phase epitaxy of InP with extremely low V/III ratios less than 10 was successfully carried out by using tertiarybutylphosphine, and detailed electrical and optical properties were investigated for the first time. Featureless surface morphology was obtained even with a V/III ratio of as low as 3. Good electrical properties, such as carrier concentrations of about 6×10¹⁴ cm^-3 and electron Hall mobilities more than 30 000 cm²/V s measured at 77 K were confirmed, although both Van der Pauw and low-temperature photoluminescence results proved the increased acceptor concentrations in the low V/III ratio range.

Original language	English
Pages (from-to)	882-884
Number of pages	3
Journal	Applied Physics Letters
Volume	62
Issue number	8
DOIs	https://doi.org/10.1063/1.108554
Publication status	Published - 1993
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.108554

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title = "Electrical and optical properties of InP grown by metalorganic vapor phase epitaxy with extremely low V/III ratios using tertiarybutylphosphine",

abstract = "Metalorganic vapor phase epitaxy of InP with extremely low V/III ratios less than 10 was successfully carried out by using tertiarybutylphosphine, and detailed electrical and optical properties were investigated for the first time. Featureless surface morphology was obtained even with a V/III ratio of as low as 3. Good electrical properties, such as carrier concentrations of about 6×1014 cm-3 and electron Hall mobilities more than 30 000 cm2/V s measured at 77 K were confirmed, although both Van der Pauw and low-temperature photoluminescence results proved the increased acceptor concentrations in the low V/III ratio range.",

author = "M. Horita and M. Suzuki and Yuichi Matsushima",

year = "1993",

doi = "10.1063/1.108554",

language = "English",

volume = "62",

pages = "882--884",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Publising LLC",

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T1 - Electrical and optical properties of InP grown by metalorganic vapor phase epitaxy with extremely low V/III ratios using tertiarybutylphosphine

AU - Horita, M.

AU - Suzuki, M.

AU - Matsushima, Yuichi

PY - 1993

Y1 - 1993

N2 - Metalorganic vapor phase epitaxy of InP with extremely low V/III ratios less than 10 was successfully carried out by using tertiarybutylphosphine, and detailed electrical and optical properties were investigated for the first time. Featureless surface morphology was obtained even with a V/III ratio of as low as 3. Good electrical properties, such as carrier concentrations of about 6×1014 cm-3 and electron Hall mobilities more than 30 000 cm2/V s measured at 77 K were confirmed, although both Van der Pauw and low-temperature photoluminescence results proved the increased acceptor concentrations in the low V/III ratio range.

AB - Metalorganic vapor phase epitaxy of InP with extremely low V/III ratios less than 10 was successfully carried out by using tertiarybutylphosphine, and detailed electrical and optical properties were investigated for the first time. Featureless surface morphology was obtained even with a V/III ratio of as low as 3. Good electrical properties, such as carrier concentrations of about 6×1014 cm-3 and electron Hall mobilities more than 30 000 cm2/V s measured at 77 K were confirmed, although both Van der Pauw and low-temperature photoluminescence results proved the increased acceptor concentrations in the low V/III ratio range.

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Electrical and optical properties of InP grown by metalorganic vapor phase epitaxy with extremely low V/III ratios using tertiarybutylphosphine

Abstract

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