Electrical and structural properties of Al and B implanted 4H-SiC

Y. Tanaka, Naoto Kobayashi, H. Okumura, R. Suzuki, T. Ohdaira, M. Hasegawa, M. Ogura, S. Yoshida, H. Tanoue

Research output: Chapter in Book/Report/Conference proceedingChapter

7 Citations (Scopus)

Abstract

We investigated the electrical and structural properties of aluminum (Al) and Boron (B) implanted 4H-SiC by using secondary ion mass spectroscopy (SIMS), low temperature photoluminescence (LTPL), Hall effect measurement and positron annihilation spectroscopy. A strong diffusion was observed for B-implanted samples toward both the inside and the surface by post-annealing at 1700 °C but not for Al-implanted samples. We could see the luminescence at 4272 angstroms, which was independent of the dopant species and annealing temperatures, originating in the defect, so-called D 1 center, introduced by the implantation and post-annealing process. For Al implantation, a temperature of 1550 °C was enough for the electrical activation of the acceptors from the result of Hall effect measurement. The positron lifetime for both Al and B as-implanted samples (216 ps) was in good agreement with the theoretical lifetime of positron localized at a Si-C di-vacancy (214 ps). The positron lifetime of post-annealed samples (148, 147, 149 ps) located between that of the virgin sample (144 ps) and the theoretical lifetime of positron localized at a C vacancy (153 ps). We supposed that a defect type of di-interstitial or di-vacancy is dominant for post-annealed samples.

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publ Ltd
Volume338
Publication statusPublished - 2000
Externally publishedYes
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: 1999 Oct 101999 Oct 15

Other

OtherICSCRM '99: The International Conference on Silicon Carbide and Related Materials
CityResearch Triangle Park, NC, USA
Period99/10/1099/10/15

Fingerprint

Positrons
Aluminum
Structural properties
Electric properties
Vacancies
Hall effect
Annealing
Positron annihilation spectroscopy
Defects
Boron
Temperature
Luminescence
Photoluminescence
Chemical activation
Doping (additives)
Spectroscopy
Ions

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Tanaka, Y., Kobayashi, N., Okumura, H., Suzuki, R., Ohdaira, T., Hasegawa, M., ... Tanoue, H. (2000). Electrical and structural properties of Al and B implanted 4H-SiC. In Materials Science Forum (Vol. 338). Trans Tech Publ Ltd.

Electrical and structural properties of Al and B implanted 4H-SiC. / Tanaka, Y.; Kobayashi, Naoto; Okumura, H.; Suzuki, R.; Ohdaira, T.; Hasegawa, M.; Ogura, M.; Yoshida, S.; Tanoue, H.

Materials Science Forum. Vol. 338 Trans Tech Publ Ltd, 2000.

Research output: Chapter in Book/Report/Conference proceedingChapter

Tanaka, Y, Kobayashi, N, Okumura, H, Suzuki, R, Ohdaira, T, Hasegawa, M, Ogura, M, Yoshida, S & Tanoue, H 2000, Electrical and structural properties of Al and B implanted 4H-SiC. in Materials Science Forum. vol. 338, Trans Tech Publ Ltd, ICSCRM '99: The International Conference on Silicon Carbide and Related Materials, Research Triangle Park, NC, USA, 99/10/10.
Tanaka Y, Kobayashi N, Okumura H, Suzuki R, Ohdaira T, Hasegawa M et al. Electrical and structural properties of Al and B implanted 4H-SiC. In Materials Science Forum. Vol. 338. Trans Tech Publ Ltd. 2000
Tanaka, Y. ; Kobayashi, Naoto ; Okumura, H. ; Suzuki, R. ; Ohdaira, T. ; Hasegawa, M. ; Ogura, M. ; Yoshida, S. ; Tanoue, H. / Electrical and structural properties of Al and B implanted 4H-SiC. Materials Science Forum. Vol. 338 Trans Tech Publ Ltd, 2000.
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AU - Tanaka, Y.

AU - Kobayashi, Naoto

AU - Okumura, H.

AU - Suzuki, R.

AU - Ohdaira, T.

AU - Hasegawa, M.

AU - Ogura, M.

AU - Yoshida, S.

AU - Tanoue, H.

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