Electrical and structural properties of Al and B implanted 4H-SiC

Y. Tanaka, Naoto Kobayashi, H. Okumura, R. Suzuki, T. Ohdaira, M. Hasegawa, M. Ogura, S. Yoshida, H. Tanoue

Research output: Chapter in Book/Report/Conference proceedingChapter

7 Citations (Scopus)

Abstract

We investigated the electrical and structural properties of aluminum (Al) and Boron (B) implanted 4H-SiC by using secondary ion mass spectroscopy (SIMS), low temperature photoluminescence (LTPL), Hall effect measurement and positron annihilation spectroscopy. A strong diffusion was observed for B-implanted samples toward both the inside and the surface by post-annealing at 1700 °C but not for Al-implanted samples. We could see the luminescence at 4272 angstroms, which was independent of the dopant species and annealing temperatures, originating in the defect, so-called D 1 center, introduced by the implantation and post-annealing process. For Al implantation, a temperature of 1550 °C was enough for the electrical activation of the acceptors from the result of Hall effect measurement. The positron lifetime for both Al and B as-implanted samples (216 ps) was in good agreement with the theoretical lifetime of positron localized at a Si-C di-vacancy (214 ps). The positron lifetime of post-annealed samples (148, 147, 149 ps) located between that of the virgin sample (144 ps) and the theoretical lifetime of positron localized at a C vacancy (153 ps). We supposed that a defect type of di-interstitial or di-vacancy is dominant for post-annealed samples.

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publ Ltd
Volume338
Publication statusPublished - 2000
Externally publishedYes
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: 1999 Oct 101999 Oct 15

Other

OtherICSCRM '99: The International Conference on Silicon Carbide and Related Materials
CityResearch Triangle Park, NC, USA
Period99/10/1099/10/15

ASJC Scopus subject areas

  • Materials Science(all)

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    Tanaka, Y., Kobayashi, N., Okumura, H., Suzuki, R., Ohdaira, T., Hasegawa, M., Ogura, M., Yoshida, S., & Tanoue, H. (2000). Electrical and structural properties of Al and B implanted 4H-SiC. In Materials Science Forum (Vol. 338). Trans Tech Publ Ltd.