Electrical characteristics and surface morphology for arsenic ion-implanted 4H-SiC at high temperature

Junji Senzaki; Kenji Fukuda; Seiji Imai; Yasunori Tanaka; Naoto Kobayashi; Hisao Tanoue; Hideyo Okushi; Kazuo Arai

Electrical characteristics and surface morphology for arsenic ion-implanted 4H-SiC at high temperature

Junji Senzaki, Kenji Fukuda, Seiji Imai, Yasunori Tanaka, Naoto Kobayashi, Hisao Tanoue, Hideyo Okushi, Kazuo Arai

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

High temperature ion-implantation of arsenic (As ⁺) into the 4H-silicon carbide (SIC) substrates with high dose of 7×10 ¹⁵ is cm ^-2 has been investigated as an effective doping technique of n-type dopant for SiC power electron devices fabrication. The R _s as low as 213 Ω/□ is achieved in the sample implanted at 500 °C and annealed at 1600 °C. AFM and SIMS results reveal that the surface roughness of implanted SiC increases with the increasing of post-annealing temperature. This result suggests that the evaporation of Si atoms and As ⁺ dopants from SiC surface decreases the thickness of As ⁺ implanted layer and makes effect on R _s of the sample annealed at higher temperature.

Original language	English
Title of host publication	Materials Science Forum
Publisher	Trans Tech Publ Ltd
Volume	338
Publication status	Published - 2000
Externally published	Yes
Event	ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA Duration: 1999 Oct 10 → 1999 Oct 15

Other

Other	ICSCRM '99: The International Conference on Silicon Carbide and Related Materials
City	Research Triangle Park, NC, USA
Period	99/10/10 → 99/10/15

ASJC Scopus subject areas

Materials Science(all)

Cite this

Senzaki, J, Fukuda, K, Imai, S, Tanaka, Y, Kobayashi, N, Tanoue, H, Okushi, H & Arai, K 2000, Electrical characteristics and surface morphology for arsenic ion-implanted 4H-SiC at high temperature. in Materials Science Forum. vol. 338, Trans Tech Publ Ltd, ICSCRM '99: The International Conference on Silicon Carbide and Related Materials, Research Triangle Park, NC, USA, 99/10/10.

@inbook{b5f1f265c03d4c75831108c7de17f3d7,

title = "Electrical characteristics and surface morphology for arsenic ion-implanted 4H-SiC at high temperature",

abstract = "High temperature ion-implantation of arsenic (As +) into the 4H-silicon carbide (SIC) substrates with high dose of 7×10 15 is cm -2 has been investigated as an effective doping technique of n-type dopant for SiC power electron devices fabrication. The R s as low as 213 Ω/□ is achieved in the sample implanted at 500 °C and annealed at 1600 °C. AFM and SIMS results reveal that the surface roughness of implanted SiC increases with the increasing of post-annealing temperature. This result suggests that the evaporation of Si atoms and As + dopants from SiC surface decreases the thickness of As + implanted layer and makes effect on R s of the sample annealed at higher temperature. ",

author = "Junji Senzaki and Kenji Fukuda and Seiji Imai and Yasunori Tanaka and Naoto Kobayashi and Hisao Tanoue and Hideyo Okushi and Kazuo Arai",

year = "2000",

language = "English",

volume = "338",

booktitle = "Materials Science Forum",

publisher = "Trans Tech Publ Ltd",

note = "ICSCRM '99: The International Conference on Silicon Carbide and Related Materials ; Conference date: 10-10-1999 Through 15-10-1999",

}

TY - CHAP

T1 - Electrical characteristics and surface morphology for arsenic ion-implanted 4H-SiC at high temperature

AU - Senzaki, Junji

AU - Fukuda, Kenji

AU - Imai, Seiji

AU - Tanaka, Yasunori

AU - Kobayashi, Naoto

AU - Tanoue, Hisao

AU - Okushi, Hideyo

AU - Arai, Kazuo

PY - 2000

Y1 - 2000

N2 - High temperature ion-implantation of arsenic (As +) into the 4H-silicon carbide (SIC) substrates with high dose of 7×10 15 is cm -2 has been investigated as an effective doping technique of n-type dopant for SiC power electron devices fabrication. The R s as low as 213 Ω/□ is achieved in the sample implanted at 500 °C and annealed at 1600 °C. AFM and SIMS results reveal that the surface roughness of implanted SiC increases with the increasing of post-annealing temperature. This result suggests that the evaporation of Si atoms and As + dopants from SiC surface decreases the thickness of As + implanted layer and makes effect on R s of the sample annealed at higher temperature.

AB - High temperature ion-implantation of arsenic (As +) into the 4H-silicon carbide (SIC) substrates with high dose of 7×10 15 is cm -2 has been investigated as an effective doping technique of n-type dopant for SiC power electron devices fabrication. The R s as low as 213 Ω/□ is achieved in the sample implanted at 500 °C and annealed at 1600 °C. AFM and SIMS results reveal that the surface roughness of implanted SiC increases with the increasing of post-annealing temperature. This result suggests that the evaporation of Si atoms and As + dopants from SiC surface decreases the thickness of As + implanted layer and makes effect on R s of the sample annealed at higher temperature.

UR - http://www.scopus.com/inward/record.url?scp=17544395882&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17544395882&partnerID=8YFLogxK

M3 - Chapter

AN - SCOPUS:17544395882

VL - 338

BT - Materials Science Forum

PB - Trans Tech Publ Ltd

T2 - ICSCRM '99: The International Conference on Silicon Carbide and Related Materials

Y2 - 10 October 1999 through 15 October 1999

ER -

Electrical characteristics and surface morphology for arsenic ion-implanted 4H-SiC at high temperature

Abstract

Other

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this