Electrical characteristics and surface morphology for arsenic ion-implanted 4H-SiC at high temperature

Junji Senzaki, Kenji Fukuda, Seiji Imai, Yasunori Tanaka, Naoto Kobayashi, Hisao Tanoue, Hideyo Okushi, Kazuo Arai

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

High temperature ion-implantation of arsenic (As +) into the 4H-silicon carbide (SIC) substrates with high dose of 7×10 15 is cm -2 has been investigated as an effective doping technique of n-type dopant for SiC power electron devices fabrication. The R s as low as 213 Ω/□ is achieved in the sample implanted at 500 °C and annealed at 1600 °C. AFM and SIMS results reveal that the surface roughness of implanted SiC increases with the increasing of post-annealing temperature. This result suggests that the evaporation of Si atoms and As + dopants from SiC surface decreases the thickness of As + implanted layer and makes effect on R s of the sample annealed at higher temperature.

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publ Ltd
Volume338
Publication statusPublished - 2000
Externally publishedYes
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: 1999 Oct 101999 Oct 15

Other

OtherICSCRM '99: The International Conference on Silicon Carbide and Related Materials
CityResearch Triangle Park, NC, USA
Period99/10/1099/10/15

ASJC Scopus subject areas

  • Materials Science(all)

Fingerprint Dive into the research topics of 'Electrical characteristics and surface morphology for arsenic ion-implanted 4H-SiC at high temperature'. Together they form a unique fingerprint.

  • Cite this

    Senzaki, J., Fukuda, K., Imai, S., Tanaka, Y., Kobayashi, N., Tanoue, H., Okushi, H., & Arai, K. (2000). Electrical characteristics and surface morphology for arsenic ion-implanted 4H-SiC at high temperature. In Materials Science Forum (Vol. 338). Trans Tech Publ Ltd.