Electrical characteristics of double-sided cooling SiC power module using Ni micro plating bonding

Tomoya Itose, Akihiro Kawagoe, Akihiro Imakiire, Masahiro Kozako, Masayuki Hikita, Kohei Tatsumi, Tomonori Iizuka, Isamu Morisako, Nobuaki Sato, Koji Shimizu, Kazutoshi Ueda, Kazuhiko Sugiura, Kazuhiro Tsuruta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents development of a double-sided cooling type SiC power module using Ni micro plating bonding at the SiC chip junctions for aiming at high heat resistance for hybrid electric vehicle (HEV) application and evaluates switching characteristics of the power module. It was found that the parasitic inductance at 10 MHz and surge voltage ?VDS of turn off waveform is reduced to 20% and 60%, respectively, compared with a conventional package type SiC power module using high temperature solder bonding composed by same chips.

Original languageEnglish
Title of host publicationCIPS 2020 - 11th International Conference on Integrated Power Electronics Systems
PublisherVDE VERLAG GMBH
Pages422-427
Number of pages6
ISBN (Electronic)9783800752263
Publication statusPublished - 2020
Event11th International Conference on Integrated Power Electronics Systems, CIPS 2020 - Berlin, Germany
Duration: 2020 Mar 242020 Mar 26

Publication series

NameCIPS 2020 - 11th International Conference on Integrated Power Electronics Systems

Conference

Conference11th International Conference on Integrated Power Electronics Systems, CIPS 2020
CountryGermany
CityBerlin
Period20/3/2420/3/26

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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