Electrical characteristics of polymer field-effect transistors with poly(methylsilsesquioxane) gate dielectrics on plastic substrates

Saori Yamazaki; Takashi Hamada; Kenji Tomatsu; Yusuke Ueda; Takashi Nagase; Takashi Kobayashi; Shuichi Murakami; Kimihiro Matsukawa; Hiroyoshi Naito

doi:10.1016/j.tsf.2008.09.004

Electrical characteristics of polymer field-effect transistors with poly(methylsilsesquioxane) gate dielectrics on plastic substrates

Saori Yamazaki, Takashi Hamada, Kenji Tomatsu, Yusuke Ueda, Takashi Nagase, Takashi Kobayashi, Shuichi Murakami, Kimihiro Matsukawa, Hiroyoshi Naito^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The fabrication of poly(3-hexylthiophene)(P3HT)-based field-effect transistors (FETs) on plastic substrates by solution processes has been systematically investigated. Top-contact P3HT FETs with polycarbonate (PC) substrates are fabricated using organic-inorganic hybrid gate insulators of poly(methylsilsesquioxane) (PMSQ) with a low curing temperature. It is found that the electrical characteristics of fabricated P3HT FETs are significantly influenced by residual oxygen and/or water in PC substrates and the drain current is remarkably increased even in oxygen and water-free environments. The electrical performances of the FETs on PC substrates are recovered by thermal annealing under vacuum and the annealed FETs exhibit stable characteristics, which are comparable to those of the FETs fabricated on glass substrates with PMSQ gate insulators.

Original language	English
Pages (from-to)	1343-1345
Number of pages	3
Journal	Thin Solid Films
Volume	517
Issue number	4
DOIs	https://doi.org/10.1016/j.tsf.2008.09.004
Publication status	Published - 2008 Dec 31
Externally published	Yes

Keywords

Gate insulator
Organic field-effect transistor
Plastic substrate
Poly(methylsilsesqioxane)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2008.09.004

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title = "Electrical characteristics of polymer field-effect transistors with poly(methylsilsesquioxane) gate dielectrics on plastic substrates",

abstract = "The fabrication of poly(3-hexylthiophene)(P3HT)-based field-effect transistors (FETs) on plastic substrates by solution processes has been systematically investigated. Top-contact P3HT FETs with polycarbonate (PC) substrates are fabricated using organic-inorganic hybrid gate insulators of poly(methylsilsesquioxane) (PMSQ) with a low curing temperature. It is found that the electrical characteristics of fabricated P3HT FETs are significantly influenced by residual oxygen and/or water in PC substrates and the drain current is remarkably increased even in oxygen and water-free environments. The electrical performances of the FETs on PC substrates are recovered by thermal annealing under vacuum and the annealed FETs exhibit stable characteristics, which are comparable to those of the FETs fabricated on glass substrates with PMSQ gate insulators.",

keywords = "Gate insulator, Organic field-effect transistor, Plastic substrate, Poly(methylsilsesqioxane)",

author = "Saori Yamazaki and Takashi Hamada and Kenji Tomatsu and Yusuke Ueda and Takashi Nagase and Takashi Kobayashi and Shuichi Murakami and Kimihiro Matsukawa and Hiroyoshi Naito",

year = "2008",

month = dec,

day = "31",

doi = "10.1016/j.tsf.2008.09.004",

language = "English",

volume = "517",

pages = "1343--1345",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "4",

}

TY - JOUR

T1 - Electrical characteristics of polymer field-effect transistors with poly(methylsilsesquioxane) gate dielectrics on plastic substrates

AU - Yamazaki, Saori

AU - Hamada, Takashi

AU - Tomatsu, Kenji

AU - Ueda, Yusuke

AU - Nagase, Takashi

AU - Kobayashi, Takashi

AU - Murakami, Shuichi

AU - Matsukawa, Kimihiro

AU - Naito, Hiroyoshi

PY - 2008/12/31

Y1 - 2008/12/31

N2 - The fabrication of poly(3-hexylthiophene)(P3HT)-based field-effect transistors (FETs) on plastic substrates by solution processes has been systematically investigated. Top-contact P3HT FETs with polycarbonate (PC) substrates are fabricated using organic-inorganic hybrid gate insulators of poly(methylsilsesquioxane) (PMSQ) with a low curing temperature. It is found that the electrical characteristics of fabricated P3HT FETs are significantly influenced by residual oxygen and/or water in PC substrates and the drain current is remarkably increased even in oxygen and water-free environments. The electrical performances of the FETs on PC substrates are recovered by thermal annealing under vacuum and the annealed FETs exhibit stable characteristics, which are comparable to those of the FETs fabricated on glass substrates with PMSQ gate insulators.

AB - The fabrication of poly(3-hexylthiophene)(P3HT)-based field-effect transistors (FETs) on plastic substrates by solution processes has been systematically investigated. Top-contact P3HT FETs with polycarbonate (PC) substrates are fabricated using organic-inorganic hybrid gate insulators of poly(methylsilsesquioxane) (PMSQ) with a low curing temperature. It is found that the electrical characteristics of fabricated P3HT FETs are significantly influenced by residual oxygen and/or water in PC substrates and the drain current is remarkably increased even in oxygen and water-free environments. The electrical performances of the FETs on PC substrates are recovered by thermal annealing under vacuum and the annealed FETs exhibit stable characteristics, which are comparable to those of the FETs fabricated on glass substrates with PMSQ gate insulators.

KW - Gate insulator

KW - Organic field-effect transistor

KW - Plastic substrate

KW - Poly(methylsilsesqioxane)

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U2 - 10.1016/j.tsf.2008.09.004

DO - 10.1016/j.tsf.2008.09.004

M3 - Article

AN - SCOPUS:57049159786

SN - 0040-6090

VL - 517

SP - 1343

EP - 1345

JO - Thin Solid Films

JF - Thin Solid Films

IS - 4

ER -

Electrical characteristics of polymer field-effect transistors with poly(methylsilsesquioxane) gate dielectrics on plastic substrates

Abstract

Keywords

ASJC Scopus subject areas

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