Electrical conduction properties of n-type Si-doped AIN with high electron mobility (>100 cm2 V-1 s-1)

Yoshitaka Taniyasu, Makoto Kasu, Toshiki Makimoto

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Abstract

For n-type Si-doped AlN, we have obtained an electron mobility and concentration of 125 cm2 V-1 s-1 and 1.75 × 10 15 cm-3 at 300 K, respectively. At 250 K, the mobility reached the maximum of 141 cm2 V-1s-1. To explain the temperature dependence of the mobility, we calculated mobilities limited by specific scattering mechanisms. We found that the mobility is limited by neutral impurity scattering rather than ionized impurity scattering or lattice scattering because of a large donor ionization energy (∼ 250 meV).

Original languageEnglish
Pages (from-to)4672-4674
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number20
DOIs
Publication statusPublished - 2004 Nov 15
Externally publishedYes

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electron mobility
conduction
scattering
impurities
ionization
temperature dependence
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Electrical conduction properties of n-type Si-doped AIN with high electron mobility (>100 cm2 V-1 s-1). / Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki.

In: Applied Physics Letters, Vol. 85, No. 20, 15.11.2004, p. 4672-4674.

Research output: Contribution to journalArticle

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