Electrical conduction properties of n-type Si-doped AIN with high electron mobility (>100 cm2 V-1 s-1)

Yoshitaka Taniyasu; Makoto Kasu; Toshiki Makimoto

doi:10.1063/1.1824181

Electrical conduction properties of n-type Si-doped AIN with high electron mobility (>100 cm² V^-1 s^-1)

Yoshitaka Taniyasu^*, Makoto Kasu, Toshiki Makimoto

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

118 Citations (Scopus)

Abstract

For n-type Si-doped AlN, we have obtained an electron mobility and concentration of 125 cm² V-1 s^-1 and 1.75 × 10 ¹⁵ cm^-3 at 300 K, respectively. At 250 K, the mobility reached the maximum of 141 cm² V^-1s^-1. To explain the temperature dependence of the mobility, we calculated mobilities limited by specific scattering mechanisms. We found that the mobility is limited by neutral impurity scattering rather than ionized impurity scattering or lattice scattering because of a large donor ionization energy (∼ 250 meV).

Original language	English
Pages (from-to)	4672-4674
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	20
DOIs	https://doi.org/10.1063/1.1824181
Publication status	Published - 2004 Nov 15
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "For n-type Si-doped AlN, we have obtained an electron mobility and concentration of 125 cm2 V-1 s-1 and 1.75 × 10 15 cm-3 at 300 K, respectively. At 250 K, the mobility reached the maximum of 141 cm2 V-1s-1. To explain the temperature dependence of the mobility, we calculated mobilities limited by specific scattering mechanisms. We found that the mobility is limited by neutral impurity scattering rather than ionized impurity scattering or lattice scattering because of a large donor ionization energy (∼ 250 meV).",

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AU - Taniyasu, Yoshitaka

AU - Kasu, Makoto

AU - Makimoto, Toshiki

PY - 2004/11/15

Y1 - 2004/11/15

N2 - For n-type Si-doped AlN, we have obtained an electron mobility and concentration of 125 cm2 V-1 s-1 and 1.75 × 10 15 cm-3 at 300 K, respectively. At 250 K, the mobility reached the maximum of 141 cm2 V-1s-1. To explain the temperature dependence of the mobility, we calculated mobilities limited by specific scattering mechanisms. We found that the mobility is limited by neutral impurity scattering rather than ionized impurity scattering or lattice scattering because of a large donor ionization energy (∼ 250 meV).

AB - For n-type Si-doped AlN, we have obtained an electron mobility and concentration of 125 cm2 V-1 s-1 and 1.75 × 10 15 cm-3 at 300 K, respectively. At 250 K, the mobility reached the maximum of 141 cm2 V-1s-1. To explain the temperature dependence of the mobility, we calculated mobilities limited by specific scattering mechanisms. We found that the mobility is limited by neutral impurity scattering rather than ionized impurity scattering or lattice scattering because of a large donor ionization energy (∼ 250 meV).

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Electrical conduction properties of n-type Si-doped AIN with high electron mobility (>100 cm² V^-1 s^-1)

Abstract

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