Electrical properties in silicon oxynitride and silicon nitride prepared by plasma-enhanced chemical vapor deposition

Hidefumi Sato, Hiromitsu Kato, Yoshimichi Ohki, Kwang Soo Seol, Takashi Noma

Research output: Contribution to conferencePaper

Abstract

The conduction mechanism of a-SiOxNy:H and a-SiNz:H is studied by measuring the conduction current and the capacitance-voltage characteristics. The low-field conduction is attributable to the Ohmic process and the high-field conduction is attributable to the Poole-Frenkel (PF) emission for both materials. From the similarity on many aspects of conduction process between the two materials, it is considered that the carriers are transported via the same sites associated with Si-N bonds located in the forbidden band in both materials.

Conference

ConferenceProceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems
CountryJapan
CityHimeji
Period01/11/1901/11/22

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ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

Cite this

Sato, H., Kato, H., Ohki, Y., Seol, K. S., & Noma, T. (2001). Electrical properties in silicon oxynitride and silicon nitride prepared by plasma-enhanced chemical vapor deposition. 148-151. Paper presented at Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems, Himeji, Japan.