Electrical properties in silicon oxynitride and silicon nitride prepared by plasma-enhanced chemical vapor deposition

Hidefumi Sato, Hiromitsu Kato, Yoshimichi Ohki, Kwang Soo Seol, Takashi Noma

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    7 Citations (Scopus)

    Abstract

    The conduction mechanism of a-SiOxNy:H and a-SiNz:H is studied by measuring the conduction current and the capacitance-voltage characteristics. The low-field conduction is attributable to the Ohmic process and the high-field conduction is attributable to the Poole-Frenkel (PF) emission for both materials. From the similarity on many aspects of conduction process between the two materials, it is considered that the carriers are transported via the same sites associated with Si-N bonds located in the forbidden band in both materials.

    Original languageEnglish
    Title of host publicationProceedings of the International Symposium on Electrical Insulating Materials
    Pages148-151
    Number of pages4
    Publication statusPublished - 2001
    EventProceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems - Himeji
    Duration: 2001 Nov 192001 Nov 22

    Other

    OtherProceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems
    CityHimeji
    Period01/11/1901/11/22

    Fingerprint

    Silicon
    Plasma enhanced chemical vapor deposition
    Silicon nitride
    Electric properties
    Capacitance
    Electric potential
    silicon nitride

    ASJC Scopus subject areas

    • Engineering(all)
    • Materials Science(all)

    Cite this

    Sato, H., Kato, H., Ohki, Y., Seol, K. S., & Noma, T. (2001). Electrical properties in silicon oxynitride and silicon nitride prepared by plasma-enhanced chemical vapor deposition. In Proceedings of the International Symposium on Electrical Insulating Materials (pp. 148-151)

    Electrical properties in silicon oxynitride and silicon nitride prepared by plasma-enhanced chemical vapor deposition. / Sato, Hidefumi; Kato, Hiromitsu; Ohki, Yoshimichi; Seol, Kwang Soo; Noma, Takashi.

    Proceedings of the International Symposium on Electrical Insulating Materials. 2001. p. 148-151.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Sato, H, Kato, H, Ohki, Y, Seol, KS & Noma, T 2001, Electrical properties in silicon oxynitride and silicon nitride prepared by plasma-enhanced chemical vapor deposition. in Proceedings of the International Symposium on Electrical Insulating Materials. pp. 148-151, Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems, Himeji, 01/11/19.
    Sato H, Kato H, Ohki Y, Seol KS, Noma T. Electrical properties in silicon oxynitride and silicon nitride prepared by plasma-enhanced chemical vapor deposition. In Proceedings of the International Symposium on Electrical Insulating Materials. 2001. p. 148-151
    Sato, Hidefumi ; Kato, Hiromitsu ; Ohki, Yoshimichi ; Seol, Kwang Soo ; Noma, Takashi. / Electrical properties in silicon oxynitride and silicon nitride prepared by plasma-enhanced chemical vapor deposition. Proceedings of the International Symposium on Electrical Insulating Materials. 2001. pp. 148-151
    @inproceedings{139ec693a5a94ce6a4294d1db7d083bc,
    title = "Electrical properties in silicon oxynitride and silicon nitride prepared by plasma-enhanced chemical vapor deposition",
    abstract = "The conduction mechanism of a-SiOxNy:H and a-SiNz:H is studied by measuring the conduction current and the capacitance-voltage characteristics. The low-field conduction is attributable to the Ohmic process and the high-field conduction is attributable to the Poole-Frenkel (PF) emission for both materials. From the similarity on many aspects of conduction process between the two materials, it is considered that the carriers are transported via the same sites associated with Si-N bonds located in the forbidden band in both materials.",
    author = "Hidefumi Sato and Hiromitsu Kato and Yoshimichi Ohki and Seol, {Kwang Soo} and Takashi Noma",
    year = "2001",
    language = "English",
    pages = "148--151",
    booktitle = "Proceedings of the International Symposium on Electrical Insulating Materials",

    }

    TY - GEN

    T1 - Electrical properties in silicon oxynitride and silicon nitride prepared by plasma-enhanced chemical vapor deposition

    AU - Sato, Hidefumi

    AU - Kato, Hiromitsu

    AU - Ohki, Yoshimichi

    AU - Seol, Kwang Soo

    AU - Noma, Takashi

    PY - 2001

    Y1 - 2001

    N2 - The conduction mechanism of a-SiOxNy:H and a-SiNz:H is studied by measuring the conduction current and the capacitance-voltage characteristics. The low-field conduction is attributable to the Ohmic process and the high-field conduction is attributable to the Poole-Frenkel (PF) emission for both materials. From the similarity on many aspects of conduction process between the two materials, it is considered that the carriers are transported via the same sites associated with Si-N bonds located in the forbidden band in both materials.

    AB - The conduction mechanism of a-SiOxNy:H and a-SiNz:H is studied by measuring the conduction current and the capacitance-voltage characteristics. The low-field conduction is attributable to the Ohmic process and the high-field conduction is attributable to the Poole-Frenkel (PF) emission for both materials. From the similarity on many aspects of conduction process between the two materials, it is considered that the carriers are transported via the same sites associated with Si-N bonds located in the forbidden band in both materials.

    UR - http://www.scopus.com/inward/record.url?scp=0035719199&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0035719199&partnerID=8YFLogxK

    M3 - Conference contribution

    SP - 148

    EP - 151

    BT - Proceedings of the International Symposium on Electrical Insulating Materials

    ER -