Electrical properties of β-FeSi2 bulk crystal grown by horizontal gradient freeze method

H. Shibata*, Y. Makita, H. Kakemoto, Y. Tsai, S. Sakuragi, H. Katsumata, A. Obara, Naoto Kobayashi, S. Uekusa, T. Tsukamoto, T. Tsunoda, Y. Imai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The growth of bulk iron silicide by Horizontal Gradient Freeze (HGF) method was achieved using different growth and annealing conditions. Two types of annealing process, in-situ annealing and ex-situ annealing, were examined. Three types of samples were prepared and examined; (i) samples which were not applied any annealing processes, (ii) samples which were applied in-situ annealing, and (iii) samples which were applied both in-situ and ex-situ annealing. The influence of annealing and growth conditions upon the material qualities was examined and discussed, putting special emphasis on the structural properties and electrical properties. Results of the X-ray diffraction revealed that only the in-situ annealing was not sufficient for the peritectic reaction from α+ε eutectic to peritectic β-phase. However, it was revealed that, if the ex-situ annealing is applied after the in-situ annealing, the condition of 900 °C for 200 hours is enough for the ex-situ annealing to obtain almost single β-phase. It was also confirmed in the aspect of electrical properties that ex-situ annealing at 900 °C for 300 hours is enough to realize electrically semiconducting β-FeSi2. The sample prepared under such a condition exhibited p-type conductivity with hole concentration and hole mobility about 5.68×1017 cm-3 and 1.36 cm2/Vs, respectively.

Original languageEnglish
Title of host publicationInternational Conference on Thermoelectrics, ICT, Proceedings
Pages62-66
Number of pages5
Publication statusPublished - 1996
Externally publishedYes
EventProceedings of the 1996 15th International Conference on Thermoelectrics, ICT'96 - Pasadena, CA, USA
Duration: 1996 Mar 261996 Mar 29

Other

OtherProceedings of the 1996 15th International Conference on Thermoelectrics, ICT'96
CityPasadena, CA, USA
Period96/3/2696/3/29

ASJC Scopus subject areas

  • Engineering(all)

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