Electrical properties of β-FeSi2 bulk crystal grown by horizontal gradient freeze method

H. Shibata, Y. Makita, H. Kakemoto, Y. Tsai, S. Sakuragi, H. Katsumata, A. Obara, Naoto Kobayashi, S. Uekusa, T. Tsukamoto, T. Tsunoda, Y. Imai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The growth of bulk iron silicide by Horizontal Gradient Freeze (HGF) method was achieved using different growth and annealing conditions. Two types of annealing process, in-situ annealing and ex-situ annealing, were examined. Three types of samples were prepared and examined; (i) samples which were not applied any annealing processes, (ii) samples which were applied in-situ annealing, and (iii) samples which were applied both in-situ and ex-situ annealing. The influence of annealing and growth conditions upon the material qualities was examined and discussed, putting special emphasis on the structural properties and electrical properties. Results of the X-ray diffraction revealed that only the in-situ annealing was not sufficient for the peritectic reaction from α+ε eutectic to peritectic β-phase. However, it was revealed that, if the ex-situ annealing is applied after the in-situ annealing, the condition of 900 °C for 200 hours is enough for the ex-situ annealing to obtain almost single β-phase. It was also confirmed in the aspect of electrical properties that ex-situ annealing at 900 °C for 300 hours is enough to realize electrically semiconducting β-FeSi2. The sample prepared under such a condition exhibited p-type conductivity with hole concentration and hole mobility about 5.68×1017 cm-3 and 1.36 cm2/Vs, respectively.

Original languageEnglish
Title of host publicationInternational Conference on Thermoelectrics, ICT, Proceedings
Pages62-66
Number of pages5
Publication statusPublished - 1996
Externally publishedYes
EventProceedings of the 1996 15th International Conference on Thermoelectrics, ICT'96 - Pasadena, CA, USA
Duration: 1996 Mar 261996 Mar 29

Other

OtherProceedings of the 1996 15th International Conference on Thermoelectrics, ICT'96
CityPasadena, CA, USA
Period96/3/2696/3/29

ASJC Scopus subject areas

  • Engineering(all)

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    Shibata, H., Makita, Y., Kakemoto, H., Tsai, Y., Sakuragi, S., Katsumata, H., Obara, A., Kobayashi, N., Uekusa, S., Tsukamoto, T., Tsunoda, T., & Imai, Y. (1996). Electrical properties of β-FeSi2 bulk crystal grown by horizontal gradient freeze method. In International Conference on Thermoelectrics, ICT, Proceedings (pp. 62-66)