Abstract
We measured the electrical properties of vertically aligned carbon nanotubes (CNTs) synthesized from via holes by radical chemical vapor deposition at a low temperature of 390°C, which meets the requirements of the Si large scale integration (LSI) process. To use the CNTs could be used for LSI wiring, we applied chemical mechanical polishing (CMP) to the CNTs and successfully reduced the via resistance by a factor often. In addition, the resistance of the CNTs was reduced further to 0.6 Ω for 2-μm-diameter vias by annealing at 400°C. Although the temperature dependence of the resistance of the CNTs grown in vias (CNT-vias) did not indicate ballistic transport, which is one of the expected properties of CNTs, we found that CMP and annealing are effective for reducing the via resistance of CNTs.
| Original language | English |
|---|---|
| Pages (from-to) | 1985-1990 |
| Number of pages | 6 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 47 |
| Issue number | 4 PART 1 |
| DOIs | |
| Publication status | Published - 2008 Apr 18 |
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Keywords
- Carbon nanotube
- Chemical mechanical polishing
- Chemical vapor deposition
- Interconnect
- Low-temperature growth
- LSI
- Radical
- Via
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Electrical properties of carbon nanotubes grown at a low temperature for use as interconnects. / Yokoyama, Daisuke; Iwasaki, Takayuki; Ishimaru, Kentaro; Sato, Shintaro; Hyakushima, Takashi; Nihei, Mizuhisa; Awano, Yuji; Kawarada, Hiroshi.
In: Japanese Journal of Applied Physics, Vol. 47, No. 4 PART 1, 18.04.2008, p. 1985-1990.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electrical properties of carbon nanotubes grown at a low temperature for use as interconnects
AU - Yokoyama, Daisuke
AU - Iwasaki, Takayuki
AU - Ishimaru, Kentaro
AU - Sato, Shintaro
AU - Hyakushima, Takashi
AU - Nihei, Mizuhisa
AU - Awano, Yuji
AU - Kawarada, Hiroshi
PY - 2008/4/18
Y1 - 2008/4/18
N2 - We measured the electrical properties of vertically aligned carbon nanotubes (CNTs) synthesized from via holes by radical chemical vapor deposition at a low temperature of 390°C, which meets the requirements of the Si large scale integration (LSI) process. To use the CNTs could be used for LSI wiring, we applied chemical mechanical polishing (CMP) to the CNTs and successfully reduced the via resistance by a factor often. In addition, the resistance of the CNTs was reduced further to 0.6 Ω for 2-μm-diameter vias by annealing at 400°C. Although the temperature dependence of the resistance of the CNTs grown in vias (CNT-vias) did not indicate ballistic transport, which is one of the expected properties of CNTs, we found that CMP and annealing are effective for reducing the via resistance of CNTs.
AB - We measured the electrical properties of vertically aligned carbon nanotubes (CNTs) synthesized from via holes by radical chemical vapor deposition at a low temperature of 390°C, which meets the requirements of the Si large scale integration (LSI) process. To use the CNTs could be used for LSI wiring, we applied chemical mechanical polishing (CMP) to the CNTs and successfully reduced the via resistance by a factor often. In addition, the resistance of the CNTs was reduced further to 0.6 Ω for 2-μm-diameter vias by annealing at 400°C. Although the temperature dependence of the resistance of the CNTs grown in vias (CNT-vias) did not indicate ballistic transport, which is one of the expected properties of CNTs, we found that CMP and annealing are effective for reducing the via resistance of CNTs.
KW - Carbon nanotube
KW - Chemical mechanical polishing
KW - Chemical vapor deposition
KW - Interconnect
KW - Low-temperature growth
KW - LSI
KW - Radical
KW - Via
UR - http://www.scopus.com/inward/record.url?scp=54249164578&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=54249164578&partnerID=8YFLogxK
U2 - 10.1143/JJAP.47.1985
DO - 10.1143/JJAP.47.1985
M3 - Article
AN - SCOPUS:54249164578
VL - 47
SP - 1985
EP - 1990
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 PART 1
ER -