Electrical properties of carbon nanotubes grown at a low temperature for use as interconnects

Daisuke Yokoyama, Takayuki Iwasaki, Kentaro Ishimaru, Shintaro Sato, Takashi Hyakushima, Mizuhisa Nihei, Yuji Awano, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    69 Citations (Scopus)

    Abstract

    We measured the electrical properties of vertically aligned carbon nanotubes (CNTs) synthesized from via holes by radical chemical vapor deposition at a low temperature of 390°C, which meets the requirements of the Si large scale integration (LSI) process. To use the CNTs could be used for LSI wiring, we applied chemical mechanical polishing (CMP) to the CNTs and successfully reduced the via resistance by a factor often. In addition, the resistance of the CNTs was reduced further to 0.6 Ω for 2-μm-diameter vias by annealing at 400°C. Although the temperature dependence of the resistance of the CNTs grown in vias (CNT-vias) did not indicate ballistic transport, which is one of the expected properties of CNTs, we found that CMP and annealing are effective for reducing the via resistance of CNTs.

    Original languageEnglish
    Pages (from-to)1985-1990
    Number of pages6
    JournalJapanese Journal of Applied Physics
    Volume47
    Issue number4 PART 1
    DOIs
    Publication statusPublished - 2008 Apr 18

    Fingerprint

    Carbon nanotubes
    Electric properties
    carbon nanotubes
    electrical properties
    LSI circuits
    Chemical mechanical polishing
    large scale integration
    Temperature
    polishing
    Annealing
    annealing
    wiring
    Electric wiring
    Ballistics
    ballistics
    Chemical vapor deposition
    vapor deposition
    requirements
    temperature dependence

    Keywords

    • Carbon nanotube
    • Chemical mechanical polishing
    • Chemical vapor deposition
    • Interconnect
    • Low-temperature growth
    • LSI
    • Radical
    • Via

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Electrical properties of carbon nanotubes grown at a low temperature for use as interconnects. / Yokoyama, Daisuke; Iwasaki, Takayuki; Ishimaru, Kentaro; Sato, Shintaro; Hyakushima, Takashi; Nihei, Mizuhisa; Awano, Yuji; Kawarada, Hiroshi.

    In: Japanese Journal of Applied Physics, Vol. 47, No. 4 PART 1, 18.04.2008, p. 1985-1990.

    Research output: Contribution to journalArticle

    Yokoyama, D, Iwasaki, T, Ishimaru, K, Sato, S, Hyakushima, T, Nihei, M, Awano, Y & Kawarada, H 2008, 'Electrical properties of carbon nanotubes grown at a low temperature for use as interconnects', Japanese Journal of Applied Physics, vol. 47, no. 4 PART 1, pp. 1985-1990. https://doi.org/10.1143/JJAP.47.1985
    Yokoyama D, Iwasaki T, Ishimaru K, Sato S, Hyakushima T, Nihei M et al. Electrical properties of carbon nanotubes grown at a low temperature for use as interconnects. Japanese Journal of Applied Physics. 2008 Apr 18;47(4 PART 1):1985-1990. https://doi.org/10.1143/JJAP.47.1985
    Yokoyama, Daisuke ; Iwasaki, Takayuki ; Ishimaru, Kentaro ; Sato, Shintaro ; Hyakushima, Takashi ; Nihei, Mizuhisa ; Awano, Yuji ; Kawarada, Hiroshi. / Electrical properties of carbon nanotubes grown at a low temperature for use as interconnects. In: Japanese Journal of Applied Physics. 2008 ; Vol. 47, No. 4 PART 1. pp. 1985-1990.
    @article{e527187264a64b21a41f66eb1093707a,
    title = "Electrical properties of carbon nanotubes grown at a low temperature for use as interconnects",
    abstract = "We measured the electrical properties of vertically aligned carbon nanotubes (CNTs) synthesized from via holes by radical chemical vapor deposition at a low temperature of 390°C, which meets the requirements of the Si large scale integration (LSI) process. To use the CNTs could be used for LSI wiring, we applied chemical mechanical polishing (CMP) to the CNTs and successfully reduced the via resistance by a factor often. In addition, the resistance of the CNTs was reduced further to 0.6 Ω for 2-μm-diameter vias by annealing at 400°C. Although the temperature dependence of the resistance of the CNTs grown in vias (CNT-vias) did not indicate ballistic transport, which is one of the expected properties of CNTs, we found that CMP and annealing are effective for reducing the via resistance of CNTs.",
    keywords = "Carbon nanotube, Chemical mechanical polishing, Chemical vapor deposition, Interconnect, Low-temperature growth, LSI, Radical, Via",
    author = "Daisuke Yokoyama and Takayuki Iwasaki and Kentaro Ishimaru and Shintaro Sato and Takashi Hyakushima and Mizuhisa Nihei and Yuji Awano and Hiroshi Kawarada",
    year = "2008",
    month = "4",
    day = "18",
    doi = "10.1143/JJAP.47.1985",
    language = "English",
    volume = "47",
    pages = "1985--1990",
    journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
    issn = "0021-4922",
    publisher = "Japan Society of Applied Physics",
    number = "4 PART 1",

    }

    TY - JOUR

    T1 - Electrical properties of carbon nanotubes grown at a low temperature for use as interconnects

    AU - Yokoyama, Daisuke

    AU - Iwasaki, Takayuki

    AU - Ishimaru, Kentaro

    AU - Sato, Shintaro

    AU - Hyakushima, Takashi

    AU - Nihei, Mizuhisa

    AU - Awano, Yuji

    AU - Kawarada, Hiroshi

    PY - 2008/4/18

    Y1 - 2008/4/18

    N2 - We measured the electrical properties of vertically aligned carbon nanotubes (CNTs) synthesized from via holes by radical chemical vapor deposition at a low temperature of 390°C, which meets the requirements of the Si large scale integration (LSI) process. To use the CNTs could be used for LSI wiring, we applied chemical mechanical polishing (CMP) to the CNTs and successfully reduced the via resistance by a factor often. In addition, the resistance of the CNTs was reduced further to 0.6 Ω for 2-μm-diameter vias by annealing at 400°C. Although the temperature dependence of the resistance of the CNTs grown in vias (CNT-vias) did not indicate ballistic transport, which is one of the expected properties of CNTs, we found that CMP and annealing are effective for reducing the via resistance of CNTs.

    AB - We measured the electrical properties of vertically aligned carbon nanotubes (CNTs) synthesized from via holes by radical chemical vapor deposition at a low temperature of 390°C, which meets the requirements of the Si large scale integration (LSI) process. To use the CNTs could be used for LSI wiring, we applied chemical mechanical polishing (CMP) to the CNTs and successfully reduced the via resistance by a factor often. In addition, the resistance of the CNTs was reduced further to 0.6 Ω for 2-μm-diameter vias by annealing at 400°C. Although the temperature dependence of the resistance of the CNTs grown in vias (CNT-vias) did not indicate ballistic transport, which is one of the expected properties of CNTs, we found that CMP and annealing are effective for reducing the via resistance of CNTs.

    KW - Carbon nanotube

    KW - Chemical mechanical polishing

    KW - Chemical vapor deposition

    KW - Interconnect

    KW - Low-temperature growth

    KW - LSI

    KW - Radical

    KW - Via

    UR - http://www.scopus.com/inward/record.url?scp=54249164578&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=54249164578&partnerID=8YFLogxK

    U2 - 10.1143/JJAP.47.1985

    DO - 10.1143/JJAP.47.1985

    M3 - Article

    AN - SCOPUS:54249164578

    VL - 47

    SP - 1985

    EP - 1990

    JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    SN - 0021-4922

    IS - 4 PART 1

    ER -