Electrical properties of diamond MISFETs with submicron-sized gate on boron-doped (111) surface

Takeyasu Saito, Kyung Ho Park, Kazuyuki Hirama, Hitoshi Umezawa, Mitsuya Satoh, Hiroshi Kawarada, Zhi Quan Liu, Kazutaka Mitsuishi, Hideyo Okushi

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    An H-terminated-surface conductive layer of B-doped diamond on a (111) surface was used to fabricate a metal insulator semiconductor field effect transistor (MISFET) using CaF2, SiO2 or Al 2O3 gate insulators and a Cu-metal stacked gate. For a CaF2 gate, the maximum measured drain current (Idmax) was 240 mA/mm and the maximum transconductance (gm) was 70 mS/mm, and the cut-off frequency of 4 GHz was obtained. For a SiO2 gate, I dmax and gm were 75 mA/mm and 24 mS/mm, respectively, and for an Al2O3 gate, these characteristics were 86 mA/mm and 15 mS/mm, respectively. These values are among the highest reported DC and RF characteristics for a diamond homoepitaxial (111) MISFET.

    Original languageEnglish
    Title of host publicationMaterials Research Society Symposium Proceedings
    Pages485-490
    Number of pages6
    Volume891
    Publication statusPublished - 2006
    Event2005 MRS Fall Meeting - Boston, MA
    Duration: 2005 Nov 282005 Dec 1

    Other

    Other2005 MRS Fall Meeting
    CityBoston, MA
    Period05/11/2805/12/1

    Fingerprint

    MISFET devices
    Diamond
    Boron
    Diamonds
    Electric properties
    Drain current
    Cutoff frequency
    Transconductance
    Metals

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials

    Cite this

    Saito, T., Park, K. H., Hirama, K., Umezawa, H., Satoh, M., Kawarada, H., ... Okushi, H. (2006). Electrical properties of diamond MISFETs with submicron-sized gate on boron-doped (111) surface. In Materials Research Society Symposium Proceedings (Vol. 891, pp. 485-490)

    Electrical properties of diamond MISFETs with submicron-sized gate on boron-doped (111) surface. / Saito, Takeyasu; Park, Kyung Ho; Hirama, Kazuyuki; Umezawa, Hitoshi; Satoh, Mitsuya; Kawarada, Hiroshi; Liu, Zhi Quan; Mitsuishi, Kazutaka; Okushi, Hideyo.

    Materials Research Society Symposium Proceedings. Vol. 891 2006. p. 485-490.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Saito, T, Park, KH, Hirama, K, Umezawa, H, Satoh, M, Kawarada, H, Liu, ZQ, Mitsuishi, K & Okushi, H 2006, Electrical properties of diamond MISFETs with submicron-sized gate on boron-doped (111) surface. in Materials Research Society Symposium Proceedings. vol. 891, pp. 485-490, 2005 MRS Fall Meeting, Boston, MA, 05/11/28.
    Saito T, Park KH, Hirama K, Umezawa H, Satoh M, Kawarada H et al. Electrical properties of diamond MISFETs with submicron-sized gate on boron-doped (111) surface. In Materials Research Society Symposium Proceedings. Vol. 891. 2006. p. 485-490
    Saito, Takeyasu ; Park, Kyung Ho ; Hirama, Kazuyuki ; Umezawa, Hitoshi ; Satoh, Mitsuya ; Kawarada, Hiroshi ; Liu, Zhi Quan ; Mitsuishi, Kazutaka ; Okushi, Hideyo. / Electrical properties of diamond MISFETs with submicron-sized gate on boron-doped (111) surface. Materials Research Society Symposium Proceedings. Vol. 891 2006. pp. 485-490
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    abstract = "An H-terminated-surface conductive layer of B-doped diamond on a (111) surface was used to fabricate a metal insulator semiconductor field effect transistor (MISFET) using CaF2, SiO2 or Al 2O3 gate insulators and a Cu-metal stacked gate. For a CaF2 gate, the maximum measured drain current (Idmax) was 240 mA/mm and the maximum transconductance (gm) was 70 mS/mm, and the cut-off frequency of 4 GHz was obtained. For a SiO2 gate, I dmax and gm were 75 mA/mm and 24 mS/mm, respectively, and for an Al2O3 gate, these characteristics were 86 mA/mm and 15 mS/mm, respectively. These values are among the highest reported DC and RF characteristics for a diamond homoepitaxial (111) MISFET.",
    author = "Takeyasu Saito and Park, {Kyung Ho} and Kazuyuki Hirama and Hitoshi Umezawa and Mitsuya Satoh and Hiroshi Kawarada and Liu, {Zhi Quan} and Kazutaka Mitsuishi and Hideyo Okushi",
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    AU - Saito, Takeyasu

    AU - Park, Kyung Ho

    AU - Hirama, Kazuyuki

    AU - Umezawa, Hitoshi

    AU - Satoh, Mitsuya

    AU - Kawarada, Hiroshi

    AU - Liu, Zhi Quan

    AU - Mitsuishi, Kazutaka

    AU - Okushi, Hideyo

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    AB - An H-terminated-surface conductive layer of B-doped diamond on a (111) surface was used to fabricate a metal insulator semiconductor field effect transistor (MISFET) using CaF2, SiO2 or Al 2O3 gate insulators and a Cu-metal stacked gate. For a CaF2 gate, the maximum measured drain current (Idmax) was 240 mA/mm and the maximum transconductance (gm) was 70 mS/mm, and the cut-off frequency of 4 GHz was obtained. For a SiO2 gate, I dmax and gm were 75 mA/mm and 24 mS/mm, respectively, and for an Al2O3 gate, these characteristics were 86 mA/mm and 15 mS/mm, respectively. These values are among the highest reported DC and RF characteristics for a diamond homoepitaxial (111) MISFET.

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