Electrical properties of diamond MISFETs with submicron-sized gate on boron-doped (111) surface

Takeyasu Saito, Kyung Ho Park, Kazuyuki Hirama, Hitoshi Umezawa, Mitsuya Satoh, Hiroshi Kawarada, Zhi Quan Liu, Kazutaka Mitsuishi, Hideyo Okushi

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    An H-terminated-surface conductive layer of B-doped diamond on a (111) surface was used to fabricate a metal insulator semiconductor field effect transistor (MISFET) using CaF2, SiO2 or Al 2O3 gate insulators and a Cu-metal stacked gate. For a CaF2 gate, the maximum measured drain current (Idmax) was 240 mA/mm and the maximum transconductance (gm) was 70 mS/mm, and the cut-off frequency of 4 GHz was obtained. For a SiO2 gate, I dmax and gm were 75 mA/mm and 24 mS/mm, respectively, and for an Al2O3 gate, these characteristics were 86 mA/mm and 15 mS/mm, respectively. These values are among the highest reported DC and RF characteristics for a diamond homoepitaxial (111) MISFET.

    Original languageEnglish
    Title of host publicationMaterials Research Society Symposium Proceedings
    Pages485-490
    Number of pages6
    Volume891
    Publication statusPublished - 2006
    Event2005 MRS Fall Meeting - Boston, MA
    Duration: 2005 Nov 282005 Dec 1

    Other

    Other2005 MRS Fall Meeting
    CityBoston, MA
    Period05/11/2805/12/1

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    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials

    Cite this

    Saito, T., Park, K. H., Hirama, K., Umezawa, H., Satoh, M., Kawarada, H., Liu, Z. Q., Mitsuishi, K., & Okushi, H. (2006). Electrical properties of diamond MISFETs with submicron-sized gate on boron-doped (111) surface. In Materials Research Society Symposium Proceedings (Vol. 891, pp. 485-490)