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Electrical properties of diamond MISFETs with submicron-sized gate on boron-doped (111) surface
Takeyasu Saito*, Kyung Ho Park, Kazuyuki Hirama, Hitoshi Umezawa, Mitsuya Satoh, Hiroshi Kawarada, Zhi Quan Liu, Kazutaka Mitsuishi, Hideyo Okushi
*Corresponding author for this work
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution