Abstract
We have studied the electrical properties of the graphitic electrodes formed in sulfur- and boron-doped homoepitaxial diamond films in order to make reliable ohmic contacts in diamond-based electronic devices. Sulfur-doped diamond films were achieved by sulfur ion implantation in undoped homoepitaxial diamond films. Boron-doped homoepitaxial diamond films were synthesized by gas-phase doping of boron during the chemical vapor deposition growth. The graphitization of diamond by Ar ion implantation was utilized for the graphitic electrodes. The electrical properties of graphite/diamond contacts were investigated by using the current-voltage measurement. The specific contact resistances were characterized by applying the linear transmission line model (TLM) and circular TLM extrapolation methods, and were determined to be 5.2 × 103 and 1.18 Ω·cm2, respectively.
| Original language | English |
|---|---|
| Pages (from-to) | 451-457 |
| Number of pages | 7 |
| Journal | Diamond and Related Materials |
| Volume | 11 |
| Issue number | 3-6 |
| DOIs | |
| Publication status | Published - 2002 Mar |
| Externally published | Yes |
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Keywords
- Applications
- Diamond films
- Interface
- Ohmic contact
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
- Surfaces, Coatings and Films
- Surfaces and Interfaces
Cite this
Electrical properties of graphite/homoepitaxial diamond contact. / Chen, Y. G.; Hasegawa, M.; Okushi, H.; Koizumi, S.; Yoshida, H.; Sakai, T.; Kobayashi, Naoto.
In: Diamond and Related Materials, Vol. 11, No. 3-6, 03.2002, p. 451-457.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electrical properties of graphite/homoepitaxial diamond contact
AU - Chen, Y. G.
AU - Hasegawa, M.
AU - Okushi, H.
AU - Koizumi, S.
AU - Yoshida, H.
AU - Sakai, T.
AU - Kobayashi, Naoto
PY - 2002/3
Y1 - 2002/3
N2 - We have studied the electrical properties of the graphitic electrodes formed in sulfur- and boron-doped homoepitaxial diamond films in order to make reliable ohmic contacts in diamond-based electronic devices. Sulfur-doped diamond films were achieved by sulfur ion implantation in undoped homoepitaxial diamond films. Boron-doped homoepitaxial diamond films were synthesized by gas-phase doping of boron during the chemical vapor deposition growth. The graphitization of diamond by Ar ion implantation was utilized for the graphitic electrodes. The electrical properties of graphite/diamond contacts were investigated by using the current-voltage measurement. The specific contact resistances were characterized by applying the linear transmission line model (TLM) and circular TLM extrapolation methods, and were determined to be 5.2 × 103 and 1.18 Ω·cm2, respectively.
AB - We have studied the electrical properties of the graphitic electrodes formed in sulfur- and boron-doped homoepitaxial diamond films in order to make reliable ohmic contacts in diamond-based electronic devices. Sulfur-doped diamond films were achieved by sulfur ion implantation in undoped homoepitaxial diamond films. Boron-doped homoepitaxial diamond films were synthesized by gas-phase doping of boron during the chemical vapor deposition growth. The graphitization of diamond by Ar ion implantation was utilized for the graphitic electrodes. The electrical properties of graphite/diamond contacts were investigated by using the current-voltage measurement. The specific contact resistances were characterized by applying the linear transmission line model (TLM) and circular TLM extrapolation methods, and were determined to be 5.2 × 103 and 1.18 Ω·cm2, respectively.
KW - Applications
KW - Diamond films
KW - Interface
KW - Ohmic contact
UR - http://www.scopus.com/inward/record.url?scp=0036508097&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0036508097&partnerID=8YFLogxK
U2 - 10.1016/S0925-9635(01)00684-7
DO - 10.1016/S0925-9635(01)00684-7
M3 - Article
AN - SCOPUS:0036508097
VL - 11
SP - 451
EP - 457
JO - Diamond and Related Materials
JF - Diamond and Related Materials
SN - 0925-9635
IS - 3-6
ER -