Electrical properties of graphite/homoepitaxial diamond contact

Y. G. Chen; M. Hasegawa; H. Okushi; S. Koizumi; H. Yoshida; T. Sakai; Naoto Kobayashi

doi:10.1016/S0925-9635(01)00684-7

Electrical properties of graphite/homoepitaxial diamond contact

Y. G. Chen, M. Hasegawa, H. Okushi, S. Koizumi, H. Yoshida, T. Sakai, Naoto Kobayashi

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

We have studied the electrical properties of the graphitic electrodes formed in sulfur- and boron-doped homoepitaxial diamond films in order to make reliable ohmic contacts in diamond-based electronic devices. Sulfur-doped diamond films were achieved by sulfur ion implantation in undoped homoepitaxial diamond films. Boron-doped homoepitaxial diamond films were synthesized by gas-phase doping of boron during the chemical vapor deposition growth. The graphitization of diamond by Ar ion implantation was utilized for the graphitic electrodes. The electrical properties of graphite/diamond contacts were investigated by using the current-voltage measurement. The specific contact resistances were characterized by applying the linear transmission line model (TLM) and circular TLM extrapolation methods, and were determined to be 5.2 × 10³ and 1.18 Ω·cm², respectively.

Original language	English
Pages (from-to)	451-457
Number of pages	7
Journal	Diamond and Related Materials
Volume	11
Issue number	3-6
DOIs	https://doi.org/10.1016/S0925-9635(01)00684-7
Publication status	Published - 2002 Mar
Externally published	Yes

Keywords

Applications
Diamond films
Interface
Ohmic contact

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Materials Chemistry
Surfaces, Coatings and Films
Surfaces and Interfaces

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title = "Electrical properties of graphite/homoepitaxial diamond contact",

abstract = "We have studied the electrical properties of the graphitic electrodes formed in sulfur- and boron-doped homoepitaxial diamond films in order to make reliable ohmic contacts in diamond-based electronic devices. Sulfur-doped diamond films were achieved by sulfur ion implantation in undoped homoepitaxial diamond films. Boron-doped homoepitaxial diamond films were synthesized by gas-phase doping of boron during the chemical vapor deposition growth. The graphitization of diamond by Ar ion implantation was utilized for the graphitic electrodes. The electrical properties of graphite/diamond contacts were investigated by using the current-voltage measurement. The specific contact resistances were characterized by applying the linear transmission line model (TLM) and circular TLM extrapolation methods, and were determined to be 5.2 × 103 and 1.18 Ω·cm2, respectively.",

keywords = "Applications, Diamond films, Interface, Ohmic contact",

author = "Chen, {Y. G.} and M. Hasegawa and H. Okushi and S. Koizumi and H. Yoshida and T. Sakai and Naoto Kobayashi",

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TY - JOUR

T1 - Electrical properties of graphite/homoepitaxial diamond contact

AU - Chen, Y. G.

AU - Hasegawa, M.

AU - Okushi, H.

AU - Koizumi, S.

AU - Yoshida, H.

AU - Sakai, T.

AU - Kobayashi, Naoto

PY - 2002/3

Y1 - 2002/3

N2 - We have studied the electrical properties of the graphitic electrodes formed in sulfur- and boron-doped homoepitaxial diamond films in order to make reliable ohmic contacts in diamond-based electronic devices. Sulfur-doped diamond films were achieved by sulfur ion implantation in undoped homoepitaxial diamond films. Boron-doped homoepitaxial diamond films were synthesized by gas-phase doping of boron during the chemical vapor deposition growth. The graphitization of diamond by Ar ion implantation was utilized for the graphitic electrodes. The electrical properties of graphite/diamond contacts were investigated by using the current-voltage measurement. The specific contact resistances were characterized by applying the linear transmission line model (TLM) and circular TLM extrapolation methods, and were determined to be 5.2 × 103 and 1.18 Ω·cm2, respectively.

AB - We have studied the electrical properties of the graphitic electrodes formed in sulfur- and boron-doped homoepitaxial diamond films in order to make reliable ohmic contacts in diamond-based electronic devices. Sulfur-doped diamond films were achieved by sulfur ion implantation in undoped homoepitaxial diamond films. Boron-doped homoepitaxial diamond films were synthesized by gas-phase doping of boron during the chemical vapor deposition growth. The graphitization of diamond by Ar ion implantation was utilized for the graphitic electrodes. The electrical properties of graphite/diamond contacts were investigated by using the current-voltage measurement. The specific contact resistances were characterized by applying the linear transmission line model (TLM) and circular TLM extrapolation methods, and were determined to be 5.2 × 103 and 1.18 Ω·cm2, respectively.

KW - Applications

KW - Diamond films

KW - Interface

KW - Ohmic contact

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DO - 10.1016/S0925-9635(01)00684-7

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SP - 451

EP - 457

JO - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

IS - 3-6

ER -

Electrical properties of graphite/homoepitaxial diamond contact

Abstract

Keywords

ASJC Scopus subject areas

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