Electrical properties of graphite/homoepitaxial diamond contact

Y. G. Chen; M. Hasegawa; H. Okushi; S. Koizumi; H. Yoshida; T. Sakai; Naoto Kobayashi

doi:10.1016/S0925-9635(01)00684-7

Electrical properties of graphite/homoepitaxial diamond contact

Y. G. Chen, M. Hasegawa, H. Okushi, S. Koizumi, H. Yoshida, T. Sakai, Naoto Kobayashi

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

We have studied the electrical properties of the graphitic electrodes formed in sulfur- and boron-doped homoepitaxial diamond films in order to make reliable ohmic contacts in diamond-based electronic devices. Sulfur-doped diamond films were achieved by sulfur ion implantation in undoped homoepitaxial diamond films. Boron-doped homoepitaxial diamond films were synthesized by gas-phase doping of boron during the chemical vapor deposition growth. The graphitization of diamond by Ar ion implantation was utilized for the graphitic electrodes. The electrical properties of graphite/diamond contacts were investigated by using the current-voltage measurement. The specific contact resistances were characterized by applying the linear transmission line model (TLM) and circular TLM extrapolation methods, and were determined to be 5.2 × 10³ and 1.18 Ω·cm², respectively.

Original language	English
Pages (from-to)	451-457
Number of pages	7
Journal	Diamond and Related Materials
Volume	11
Issue number	3-6
DOIs	https://doi.org/10.1016/S0925-9635(01)00684-7
Publication status	Published - 2002 Mar
Externally published	Yes

Keywords

Applications
Diamond films
Interface
Ohmic contact

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Materials Chemistry
Surfaces, Coatings and Films
Surfaces and Interfaces

Access to Document

10.1016/S0925-9635(01)00684-7

Fingerprint Dive into the research topics of 'Electrical properties of graphite/homoepitaxial diamond contact'. Together they form a unique fingerprint.

Cite this

@article{f0862c6bfd474cbb8b0e3c1915eaf1c7,

title = "Electrical properties of graphite/homoepitaxial diamond contact",

abstract = "We have studied the electrical properties of the graphitic electrodes formed in sulfur- and boron-doped homoepitaxial diamond films in order to make reliable ohmic contacts in diamond-based electronic devices. Sulfur-doped diamond films were achieved by sulfur ion implantation in undoped homoepitaxial diamond films. Boron-doped homoepitaxial diamond films were synthesized by gas-phase doping of boron during the chemical vapor deposition growth. The graphitization of diamond by Ar ion implantation was utilized for the graphitic electrodes. The electrical properties of graphite/diamond contacts were investigated by using the current-voltage measurement. The specific contact resistances were characterized by applying the linear transmission line model (TLM) and circular TLM extrapolation methods, and were determined to be 5.2 × 103 and 1.18 Ω·cm2, respectively.",

keywords = "Applications, Diamond films, Interface, Ohmic contact",

author = "Chen, {Y. G.} and M. Hasegawa and H. Okushi and S. Koizumi and H. Yoshida and T. Sakai and Naoto Kobayashi",

year = "2002",

month = mar,

doi = "10.1016/S0925-9635(01)00684-7",

language = "English",

volume = "11",

pages = "451--457",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier BV",

number = "3-6",

}

TY - JOUR

T1 - Electrical properties of graphite/homoepitaxial diamond contact

AU - Chen, Y. G.

AU - Hasegawa, M.

AU - Okushi, H.

AU - Koizumi, S.

AU - Yoshida, H.

AU - Sakai, T.

AU - Kobayashi, Naoto

PY - 2002/3

Y1 - 2002/3

N2 - We have studied the electrical properties of the graphitic electrodes formed in sulfur- and boron-doped homoepitaxial diamond films in order to make reliable ohmic contacts in diamond-based electronic devices. Sulfur-doped diamond films were achieved by sulfur ion implantation in undoped homoepitaxial diamond films. Boron-doped homoepitaxial diamond films were synthesized by gas-phase doping of boron during the chemical vapor deposition growth. The graphitization of diamond by Ar ion implantation was utilized for the graphitic electrodes. The electrical properties of graphite/diamond contacts were investigated by using the current-voltage measurement. The specific contact resistances were characterized by applying the linear transmission line model (TLM) and circular TLM extrapolation methods, and were determined to be 5.2 × 103 and 1.18 Ω·cm2, respectively.

AB - We have studied the electrical properties of the graphitic electrodes formed in sulfur- and boron-doped homoepitaxial diamond films in order to make reliable ohmic contacts in diamond-based electronic devices. Sulfur-doped diamond films were achieved by sulfur ion implantation in undoped homoepitaxial diamond films. Boron-doped homoepitaxial diamond films were synthesized by gas-phase doping of boron during the chemical vapor deposition growth. The graphitization of diamond by Ar ion implantation was utilized for the graphitic electrodes. The electrical properties of graphite/diamond contacts were investigated by using the current-voltage measurement. The specific contact resistances were characterized by applying the linear transmission line model (TLM) and circular TLM extrapolation methods, and were determined to be 5.2 × 103 and 1.18 Ω·cm2, respectively.

KW - Applications

KW - Diamond films

KW - Interface

KW - Ohmic contact

UR - http://www.scopus.com/inward/record.url?scp=0036508097&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036508097&partnerID=8YFLogxK

U2 - 10.1016/S0925-9635(01)00684-7

DO - 10.1016/S0925-9635(01)00684-7

M3 - Article

AN - SCOPUS:0036508097

VL - 11

SP - 451

EP - 457

JO - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

IS - 3-6

ER -