Abstract
We have studied the electrical properties of the graphitic electrodes formed in sulfur- and boron-doped homoepitaxial diamond films in order to make reliable ohmic contacts in diamond-based electronic devices. Sulfur-doped diamond films were achieved by sulfur ion implantation in undoped homoepitaxial diamond films. Boron-doped homoepitaxial diamond films were synthesized by gas-phase doping of boron during the chemical vapor deposition growth. The graphitization of diamond by Ar ion implantation was utilized for the graphitic electrodes. The electrical properties of graphite/diamond contacts were investigated by using the current-voltage measurement. The specific contact resistances were characterized by applying the linear transmission line model (TLM) and circular TLM extrapolation methods, and were determined to be 5.2 × 103 and 1.18 Ω·cm2, respectively.
Original language | English |
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Pages (from-to) | 451-457 |
Number of pages | 7 |
Journal | Diamond and Related Materials |
Volume | 11 |
Issue number | 3-6 |
DOIs | |
Publication status | Published - 2002 Mar |
Externally published | Yes |
Keywords
- Applications
- Diamond films
- Interface
- Ohmic contact
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
- Surfaces, Coatings and Films
- Surfaces and Interfaces