Electrical properties of graphite/homoepitaxial diamond contact

Y. G. Chen, M. Hasegawa, H. Okushi, S. Koizumi, H. Yoshida, T. Sakai, Naoto Kobayashi

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We have studied the electrical properties of the graphitic electrodes formed in sulfur- and boron-doped homoepitaxial diamond films in order to make reliable ohmic contacts in diamond-based electronic devices. Sulfur-doped diamond films were achieved by sulfur ion implantation in undoped homoepitaxial diamond films. Boron-doped homoepitaxial diamond films were synthesized by gas-phase doping of boron during the chemical vapor deposition growth. The graphitization of diamond by Ar ion implantation was utilized for the graphitic electrodes. The electrical properties of graphite/diamond contacts were investigated by using the current-voltage measurement. The specific contact resistances were characterized by applying the linear transmission line model (TLM) and circular TLM extrapolation methods, and were determined to be 5.2 × 103 and 1.18 Ω·cm2, respectively.

Original languageEnglish
Pages (from-to)451-457
Number of pages7
JournalDiamond and Related Materials
Volume11
Issue number3-6
DOIs
Publication statusPublished - 2002 Mar
Externally publishedYes

Fingerprint

Diamond
Graphite
Diamond films
diamond films
Boron
Diamonds
Electric properties
graphite
diamonds
electrical properties
Sulfur
boron
sulfur
Ion implantation
transmission lines
ion implantation
Electric lines
Electrodes
Graphitization
graphitization

Keywords

  • Applications
  • Diamond films
  • Interface
  • Ohmic contact

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Chen, Y. G., Hasegawa, M., Okushi, H., Koizumi, S., Yoshida, H., Sakai, T., & Kobayashi, N. (2002). Electrical properties of graphite/homoepitaxial diamond contact. Diamond and Related Materials, 11(3-6), 451-457. https://doi.org/10.1016/S0925-9635(01)00684-7

Electrical properties of graphite/homoepitaxial diamond contact. / Chen, Y. G.; Hasegawa, M.; Okushi, H.; Koizumi, S.; Yoshida, H.; Sakai, T.; Kobayashi, Naoto.

In: Diamond and Related Materials, Vol. 11, No. 3-6, 03.2002, p. 451-457.

Research output: Contribution to journalArticle

Chen, YG, Hasegawa, M, Okushi, H, Koizumi, S, Yoshida, H, Sakai, T & Kobayashi, N 2002, 'Electrical properties of graphite/homoepitaxial diamond contact', Diamond and Related Materials, vol. 11, no. 3-6, pp. 451-457. https://doi.org/10.1016/S0925-9635(01)00684-7
Chen YG, Hasegawa M, Okushi H, Koizumi S, Yoshida H, Sakai T et al. Electrical properties of graphite/homoepitaxial diamond contact. Diamond and Related Materials. 2002 Mar;11(3-6):451-457. https://doi.org/10.1016/S0925-9635(01)00684-7
Chen, Y. G. ; Hasegawa, M. ; Okushi, H. ; Koizumi, S. ; Yoshida, H. ; Sakai, T. ; Kobayashi, Naoto. / Electrical properties of graphite/homoepitaxial diamond contact. In: Diamond and Related Materials. 2002 ; Vol. 11, No. 3-6. pp. 451-457.
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