Electrical properties of graphite/p-type homoepitaxial diamond contact

Y. G. Chen; M. Hasegawa; S. Yamanaka; H. Okushi; Naoto Kobayashi

Electrical properties of graphite/p-type homoepitaxial diamond contact

Y. G. Chen^*, M. Hasegawa, S. Yamanaka, H. Okushi, Naoto Kobayashi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We have studied the electrical properties of the graphitic electrodes formed in boron-doped homoepitaxial diamond films in order to make reliable ohmic contacts in diamond-based electronic devices. Boron-doped homoepitaxial diamond films were synthesized by gas-phase doping of boron during the chemical vapor deposition growth. The graphitization of diamond by Ar ion implantation was utilized for the graphitic electrodes. The electrical properties of graphite/diamond contacts were investigated by using the current-voltage measurement. The specific contact resistance was characterized by applying circular transmission line model (CTLM) extrapolation method and determined to be 1.18 Ω· cm².

Original language	English
Pages (from-to)	945-948
Number of pages	4
Journal	Materials Science Forum
Volume	389-393
Issue number	2
Publication status	Published - 2002
Externally published	Yes

Keywords

Diamond Applications
Diamond Properties
Ohmic Contacts
Specific Contact Resistance
Transmission Line Model

ASJC Scopus subject areas

Materials Science(all)

Cite this

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title = "Electrical properties of graphite/p-type homoepitaxial diamond contact",

abstract = "We have studied the electrical properties of the graphitic electrodes formed in boron-doped homoepitaxial diamond films in order to make reliable ohmic contacts in diamond-based electronic devices. Boron-doped homoepitaxial diamond films were synthesized by gas-phase doping of boron during the chemical vapor deposition growth. The graphitization of diamond by Ar ion implantation was utilized for the graphitic electrodes. The electrical properties of graphite/diamond contacts were investigated by using the current-voltage measurement. The specific contact resistance was characterized by applying circular transmission line model (CTLM) extrapolation method and determined to be 1.18 Ω· cm2.",

keywords = "Diamond Applications, Diamond Properties, Ohmic Contacts, Specific Contact Resistance, Transmission Line Model",

author = "Chen, {Y. G.} and M. Hasegawa and S. Yamanaka and H. Okushi and Naoto Kobayashi",

year = "2002",

language = "English",

volume = "389-393",

pages = "945--948",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications",

number = "2",

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TY - JOUR

T1 - Electrical properties of graphite/p-type homoepitaxial diamond contact

AU - Chen, Y. G.

AU - Hasegawa, M.

AU - Yamanaka, S.

AU - Okushi, H.

AU - Kobayashi, Naoto

PY - 2002

Y1 - 2002

N2 - We have studied the electrical properties of the graphitic electrodes formed in boron-doped homoepitaxial diamond films in order to make reliable ohmic contacts in diamond-based electronic devices. Boron-doped homoepitaxial diamond films were synthesized by gas-phase doping of boron during the chemical vapor deposition growth. The graphitization of diamond by Ar ion implantation was utilized for the graphitic electrodes. The electrical properties of graphite/diamond contacts were investigated by using the current-voltage measurement. The specific contact resistance was characterized by applying circular transmission line model (CTLM) extrapolation method and determined to be 1.18 Ω· cm2.

AB - We have studied the electrical properties of the graphitic electrodes formed in boron-doped homoepitaxial diamond films in order to make reliable ohmic contacts in diamond-based electronic devices. Boron-doped homoepitaxial diamond films were synthesized by gas-phase doping of boron during the chemical vapor deposition growth. The graphitization of diamond by Ar ion implantation was utilized for the graphitic electrodes. The electrical properties of graphite/diamond contacts were investigated by using the current-voltage measurement. The specific contact resistance was characterized by applying circular transmission line model (CTLM) extrapolation method and determined to be 1.18 Ω· cm2.

KW - Diamond Applications

KW - Diamond Properties

KW - Ohmic Contacts

KW - Specific Contact Resistance

KW - Transmission Line Model

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M3 - Article

AN - SCOPUS:0036430525

SN - 0255-5476

VL - 389-393

SP - 945

EP - 948

JO - Materials Science Forum

JF - Materials Science Forum

IS - 2

ER -

Electrical properties of graphite/p-type homoepitaxial diamond contact

Abstract

Keywords

ASJC Scopus subject areas

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