Electrical properties of graphite/p-type homoepitaxial diamond contact

Y. G. Chen, M. Hasegawa, S. Yamanaka, H. Okushi, Naoto Kobayashi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have studied the electrical properties of the graphitic electrodes formed in boron-doped homoepitaxial diamond films in order to make reliable ohmic contacts in diamond-based electronic devices. Boron-doped homoepitaxial diamond films were synthesized by gas-phase doping of boron during the chemical vapor deposition growth. The graphitization of diamond by Ar ion implantation was utilized for the graphitic electrodes. The electrical properties of graphite/diamond contacts were investigated by using the current-voltage measurement. The specific contact resistance was characterized by applying circular transmission line model (CTLM) extrapolation method and determined to be 1.18 Ω· cm2.

Original languageEnglish
Pages (from-to)945-948
Number of pages4
JournalMaterials Science Forum
Volume389-393
Issue number2
Publication statusPublished - 2002
Externally publishedYes

Fingerprint

Diamond
Boron
Graphite
Diamonds
boron
Electric properties
graphite
diamonds
Diamond films
electrical properties
diamond films
Electrodes
Graphitization
graphitization
electrodes
Ohmic contacts
Voltage measurement
Electric current measurement
Contact resistance
contact resistance

Keywords

  • Diamond Applications
  • Diamond Properties
  • Ohmic Contacts
  • Specific Contact Resistance
  • Transmission Line Model

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Chen, Y. G., Hasegawa, M., Yamanaka, S., Okushi, H., & Kobayashi, N. (2002). Electrical properties of graphite/p-type homoepitaxial diamond contact. Materials Science Forum, 389-393(2), 945-948.

Electrical properties of graphite/p-type homoepitaxial diamond contact. / Chen, Y. G.; Hasegawa, M.; Yamanaka, S.; Okushi, H.; Kobayashi, Naoto.

In: Materials Science Forum, Vol. 389-393, No. 2, 2002, p. 945-948.

Research output: Contribution to journalArticle

Chen, YG, Hasegawa, M, Yamanaka, S, Okushi, H & Kobayashi, N 2002, 'Electrical properties of graphite/p-type homoepitaxial diamond contact', Materials Science Forum, vol. 389-393, no. 2, pp. 945-948.
Chen YG, Hasegawa M, Yamanaka S, Okushi H, Kobayashi N. Electrical properties of graphite/p-type homoepitaxial diamond contact. Materials Science Forum. 2002;389-393(2):945-948.
Chen, Y. G. ; Hasegawa, M. ; Yamanaka, S. ; Okushi, H. ; Kobayashi, Naoto. / Electrical properties of graphite/p-type homoepitaxial diamond contact. In: Materials Science Forum. 2002 ; Vol. 389-393, No. 2. pp. 945-948.
@article{8ff083dacf014f7091e94b85e6bfec21,
title = "Electrical properties of graphite/p-type homoepitaxial diamond contact",
abstract = "We have studied the electrical properties of the graphitic electrodes formed in boron-doped homoepitaxial diamond films in order to make reliable ohmic contacts in diamond-based electronic devices. Boron-doped homoepitaxial diamond films were synthesized by gas-phase doping of boron during the chemical vapor deposition growth. The graphitization of diamond by Ar ion implantation was utilized for the graphitic electrodes. The electrical properties of graphite/diamond contacts were investigated by using the current-voltage measurement. The specific contact resistance was characterized by applying circular transmission line model (CTLM) extrapolation method and determined to be 1.18 Ω· cm2.",
keywords = "Diamond Applications, Diamond Properties, Ohmic Contacts, Specific Contact Resistance, Transmission Line Model",
author = "Chen, {Y. G.} and M. Hasegawa and S. Yamanaka and H. Okushi and Naoto Kobayashi",
year = "2002",
language = "English",
volume = "389-393",
pages = "945--948",
journal = "Materials Science Forum",
issn = "0255-5476",
publisher = "Trans Tech Publications",
number = "2",

}

TY - JOUR

T1 - Electrical properties of graphite/p-type homoepitaxial diamond contact

AU - Chen, Y. G.

AU - Hasegawa, M.

AU - Yamanaka, S.

AU - Okushi, H.

AU - Kobayashi, Naoto

PY - 2002

Y1 - 2002

N2 - We have studied the electrical properties of the graphitic electrodes formed in boron-doped homoepitaxial diamond films in order to make reliable ohmic contacts in diamond-based electronic devices. Boron-doped homoepitaxial diamond films were synthesized by gas-phase doping of boron during the chemical vapor deposition growth. The graphitization of diamond by Ar ion implantation was utilized for the graphitic electrodes. The electrical properties of graphite/diamond contacts were investigated by using the current-voltage measurement. The specific contact resistance was characterized by applying circular transmission line model (CTLM) extrapolation method and determined to be 1.18 Ω· cm2.

AB - We have studied the electrical properties of the graphitic electrodes formed in boron-doped homoepitaxial diamond films in order to make reliable ohmic contacts in diamond-based electronic devices. Boron-doped homoepitaxial diamond films were synthesized by gas-phase doping of boron during the chemical vapor deposition growth. The graphitization of diamond by Ar ion implantation was utilized for the graphitic electrodes. The electrical properties of graphite/diamond contacts were investigated by using the current-voltage measurement. The specific contact resistance was characterized by applying circular transmission line model (CTLM) extrapolation method and determined to be 1.18 Ω· cm2.

KW - Diamond Applications

KW - Diamond Properties

KW - Ohmic Contacts

KW - Specific Contact Resistance

KW - Transmission Line Model

UR - http://www.scopus.com/inward/record.url?scp=0036430525&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036430525&partnerID=8YFLogxK

M3 - Article

VL - 389-393

SP - 945

EP - 948

JO - Materials Science Forum

JF - Materials Science Forum

SN - 0255-5476

IS - 2

ER -