Electrical resistivity and microstructures of sputtered CuxMo6S8 films

B. R. Zhao; R. Ohtaki; H. L. Luo; L. D. Flesner

doi:10.1016/0040-6090(83)90236-5

Electrical resistivity and microstructures of sputtered Cu_xMo₆S₈ films

B. R. Zhao^*, R. Ohtaki, H. L. Luo, L. D. Flesner

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The resistivity of superconducting Cu_xMo₆S₈ films prepared by sputtering was measured between 10 and 300 K. Using a scanning electron microscope, the microstructures of the films with different preparation conditions were examined. The broadly varying values of the measured resistivities were explained on the basis of the particular microstructures of the films.

Original language	English
Pages (from-to)	185-192
Number of pages	8
Journal	Thin Solid Films
Volume	110
Issue number	3
DOIs	https://doi.org/10.1016/0040-6090(83)90236-5
Publication status	Published - 1983 Dec 16
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/0040-6090(83)90236-5

Cite this

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abstract = "The resistivity of superconducting CuxMo6S8 films prepared by sputtering was measured between 10 and 300 K. Using a scanning electron microscope, the microstructures of the films with different preparation conditions were examined. The broadly varying values of the measured resistivities were explained on the basis of the particular microstructures of the films.",

author = "Zhao, {B. R.} and R. Ohtaki and Luo, {H. L.} and Flesner, {L. D.}",

note = "Funding Information: This study was supported by the National Science Foundation Research Grant DMR 81-08421.",

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AU - Zhao, B. R.

AU - Ohtaki, R.

AU - Luo, H. L.

AU - Flesner, L. D.

N1 - Funding Information: This study was supported by the National Science Foundation Research Grant DMR 81-08421.

PY - 1983/12/16

Y1 - 1983/12/16

N2 - The resistivity of superconducting CuxMo6S8 films prepared by sputtering was measured between 10 and 300 K. Using a scanning electron microscope, the microstructures of the films with different preparation conditions were examined. The broadly varying values of the measured resistivities were explained on the basis of the particular microstructures of the films.

AB - The resistivity of superconducting CuxMo6S8 films prepared by sputtering was measured between 10 and 300 K. Using a scanning electron microscope, the microstructures of the films with different preparation conditions were examined. The broadly varying values of the measured resistivities were explained on the basis of the particular microstructures of the films.

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Electrical resistivity and microstructures of sputtered Cu_xMo₆S₈ films

Abstract

ASJC Scopus subject areas

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