Electrical spin injection from ferromagnetic MnAs metal layers into GaAs

M. Ramsteiner, H. Y. Hao, A. Kawaharazuka, H. J. Zhu, M. Kästner, R. Hey, L. Däweritz, H. T. Grahn, K. H. Ploog

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Abstract

The spin injection into GaAs has been studied for the ferromagnetic metal MnAs. Evidence for preferential minority-spin injection is obtained from the circular polarization of the electroluminescence in GaAs/(In,Ga)As light-emitting diodes (LED). The spin-injection efficiency of 6% at the MnAs/GaAs interface is estimated on the basis of spin-relaxation times extracted from time-resolved photoluminescence measurements. This efficiency, as well as the preferential spin orientation, resembles very much the injection behavior found for epitaxial Fe layers. The results do not depend on the azimuthal orientation of the epitaxial MnAs injection layer.

Original languageEnglish
Article number081304
Pages (from-to)813041-813044
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume66
Issue number8
Publication statusPublished - 2002 Aug 15

ASJC Scopus subject areas

  • Condensed Matter Physics

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    Ramsteiner, M., Hao, H. Y., Kawaharazuka, A., Zhu, H. J., Kästner, M., Hey, R., Däweritz, L., Grahn, H. T., & Ploog, K. H. (2002). Electrical spin injection from ferromagnetic MnAs metal layers into GaAs. Physical Review B - Condensed Matter and Materials Physics, 66(8), 813041-813044. [081304].