Abstract
The spin injection into GaAs has been studied for the ferromagnetic metal MnAs. Evidence for preferential minority-spin injection is obtained from the circular polarization of the electroluminescence in GaAs/(In,Ga)As light-emitting diodes (LED). The spin-injection efficiency of 6% at the MnAs/GaAs interface is estimated on the basis of spin-relaxation times extracted from time-resolved photoluminescence measurements. This efficiency, as well as the preferential spin orientation, resembles very much the injection behavior found for epitaxial Fe layers. The results do not depend on the azimuthal orientation of the epitaxial MnAs injection layer.
| Original language | English |
|---|---|
| Article number | 081304 |
| Pages (from-to) | 813041-813044 |
| Number of pages | 4 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 66 |
| Issue number | 8 |
| Publication status | Published - 2002 Aug 15 |
ASJC Scopus subject areas
- Condensed Matter Physics
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Ramsteiner, M., Hao, H. Y., Kawaharazuka, A., Zhu, H. J., Kästner, M., Hey, R., Däweritz, L., Grahn, H. T., & Ploog, K. H. (2002). Electrical spin injection from ferromagnetic MnAs metal layers into GaAs. Physical Review B - Condensed Matter and Materials Physics, 66(8), 813041-813044. [081304].