Electrical spin injection from ferromagnetic MnAs metal layers into GaAs

M. Ramsteiner; H. Y. Hao; A. Kawaharazuka; H. J. Zhu; M. Kästner; R. Hey; L. Däweritz; H. T. Grahn; K. H. Ploog

Electrical spin injection from ferromagnetic MnAs metal layers into GaAs

M. Ramsteiner, H. Y. Hao, A. Kawaharazuka, H. J. Zhu, M. Kästner, R. Hey, L. Däweritz, H. T. Grahn, K. H. Ploog

Waseda Research Institute for Science and Engineering

Research output: Contribution to journal › Article › peer-review

179 Citations (Scopus)

Abstract

The spin injection into GaAs has been studied for the ferromagnetic metal MnAs. Evidence for preferential minority-spin injection is obtained from the circular polarization of the electroluminescence in GaAs/(In,Ga)As light-emitting diodes (LED). The spin-injection efficiency of 6% at the MnAs/GaAs interface is estimated on the basis of spin-relaxation times extracted from time-resolved photoluminescence measurements. This efficiency, as well as the preferential spin orientation, resembles very much the injection behavior found for epitaxial Fe layers. The results do not depend on the azimuthal orientation of the epitaxial MnAs injection layer.

Original language	English
Article number	081304
Pages (from-to)	813041-813044
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	66
Issue number	8
Publication status	Published - 2002 Aug 15

ASJC Scopus subject areas

Condensed Matter Physics

Access to Document

Fingerprint Dive into the research topics of 'Electrical spin injection from ferromagnetic MnAs metal layers into GaAs'. Together they form a unique fingerprint.

Cite this

Electrical spin injection from ferromagnetic MnAs metal layers into GaAs. / Ramsteiner, M.; Hao, H. Y.; Kawaharazuka, A.; Zhu, H. J.; Kästner, M.; Hey, R.; Däweritz, L.; Grahn, H. T.; Ploog, K. H.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 66, No. 8, 081304, 15.08.2002, p. 813041-813044.

Research output: Contribution to journal › Article › peer-review

@article{09b066ade9024f748040d17bd279c7ec,

title = "Electrical spin injection from ferromagnetic MnAs metal layers into GaAs",

abstract = "The spin injection into GaAs has been studied for the ferromagnetic metal MnAs. Evidence for preferential minority-spin injection is obtained from the circular polarization of the electroluminescence in GaAs/(In,Ga)As light-emitting diodes (LED). The spin-injection efficiency of 6% at the MnAs/GaAs interface is estimated on the basis of spin-relaxation times extracted from time-resolved photoluminescence measurements. This efficiency, as well as the preferential spin orientation, resembles very much the injection behavior found for epitaxial Fe layers. The results do not depend on the azimuthal orientation of the epitaxial MnAs injection layer.",

author = "M. Ramsteiner and Hao, {H. Y.} and A. Kawaharazuka and Zhu, {H. J.} and M. K{\"a}stner and R. Hey and L. D{\"a}weritz and Grahn, {H. T.} and Ploog, {K. H.}",

year = "2002",

month = aug,

day = "15",

language = "English",

volume = "66",

pages = "813041--813044",

journal = "Physical Review B-Condensed Matter",

issn = "0163-1829",

publisher = "American Institute of Physics Publising LLC",

number = "8",

}

TY - JOUR

T1 - Electrical spin injection from ferromagnetic MnAs metal layers into GaAs

AU - Ramsteiner, M.

AU - Hao, H. Y.

AU - Kawaharazuka, A.

AU - Zhu, H. J.

AU - Kästner, M.

AU - Hey, R.

AU - Däweritz, L.

AU - Grahn, H. T.

AU - Ploog, K. H.

PY - 2002/8/15

Y1 - 2002/8/15

N2 - The spin injection into GaAs has been studied for the ferromagnetic metal MnAs. Evidence for preferential minority-spin injection is obtained from the circular polarization of the electroluminescence in GaAs/(In,Ga)As light-emitting diodes (LED). The spin-injection efficiency of 6% at the MnAs/GaAs interface is estimated on the basis of spin-relaxation times extracted from time-resolved photoluminescence measurements. This efficiency, as well as the preferential spin orientation, resembles very much the injection behavior found for epitaxial Fe layers. The results do not depend on the azimuthal orientation of the epitaxial MnAs injection layer.

AB - The spin injection into GaAs has been studied for the ferromagnetic metal MnAs. Evidence for preferential minority-spin injection is obtained from the circular polarization of the electroluminescence in GaAs/(In,Ga)As light-emitting diodes (LED). The spin-injection efficiency of 6% at the MnAs/GaAs interface is estimated on the basis of spin-relaxation times extracted from time-resolved photoluminescence measurements. This efficiency, as well as the preferential spin orientation, resembles very much the injection behavior found for epitaxial Fe layers. The results do not depend on the azimuthal orientation of the epitaxial MnAs injection layer.

UR - http://www.scopus.com/inward/record.url?scp=0037104388&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037104388&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0037104388

VL - 66

SP - 813041

EP - 813044

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 8

M1 - 081304

ER -