Electrical spin injection from ferromagnetic MnAs metal layers into GaAs

M. Ramsteiner; H. Y. Hao; A. Kawaharazuka; H. J. Zhu; M. Kästner; R. Hey; L. Däweritz; H. T. Grahn; K. H. Ploog

Electrical spin injection from ferromagnetic MnAs metal layers into GaAs

M. Ramsteiner^*, H. Y. Hao, A. Kawaharazuka, H. J. Zhu, M. Kästner, R. Hey, L. Däweritz, H. T. Grahn, K. H. Ploog

^*Corresponding author for this work

Waseda Research Institute for Science and Engineering

Research output: Contribution to journal › Article › peer-review

185 Citations (Scopus)

Abstract

The spin injection into GaAs has been studied for the ferromagnetic metal MnAs. Evidence for preferential minority-spin injection is obtained from the circular polarization of the electroluminescence in GaAs/(In,Ga)As light-emitting diodes (LED). The spin-injection efficiency of 6% at the MnAs/GaAs interface is estimated on the basis of spin-relaxation times extracted from time-resolved photoluminescence measurements. This efficiency, as well as the preferential spin orientation, resembles very much the injection behavior found for epitaxial Fe layers. The results do not depend on the azimuthal orientation of the epitaxial MnAs injection layer.

Original language	English
Article number	081304
Pages (from-to)	813041-813044
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	66
Issue number	8
Publication status	Published - 2002 Aug 15

ASJC Scopus subject areas

Condensed Matter Physics

Cite this

Electrical spin injection from ferromagnetic MnAs metal layers into GaAs. / Ramsteiner, M.; Hao, H. Y.; Kawaharazuka, A.; Zhu, H. J.; Kästner, M.; Hey, R.; Däweritz, L.; Grahn, H. T.; Ploog, K. H.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 66, No. 8, 081304, 15.08.2002, p. 813041-813044.

Research output: Contribution to journal › Article › peer-review

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abstract = "The spin injection into GaAs has been studied for the ferromagnetic metal MnAs. Evidence for preferential minority-spin injection is obtained from the circular polarization of the electroluminescence in GaAs/(In,Ga)As light-emitting diodes (LED). The spin-injection efficiency of 6% at the MnAs/GaAs interface is estimated on the basis of spin-relaxation times extracted from time-resolved photoluminescence measurements. This efficiency, as well as the preferential spin orientation, resembles very much the injection behavior found for epitaxial Fe layers. The results do not depend on the azimuthal orientation of the epitaxial MnAs injection layer.",

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T1 - Electrical spin injection from ferromagnetic MnAs metal layers into GaAs

AU - Ramsteiner, M.

AU - Hao, H. Y.

AU - Kawaharazuka, A.

AU - Zhu, H. J.

AU - Kästner, M.

AU - Hey, R.

AU - Däweritz, L.

AU - Grahn, H. T.

AU - Ploog, K. H.

PY - 2002/8/15

Y1 - 2002/8/15

N2 - The spin injection into GaAs has been studied for the ferromagnetic metal MnAs. Evidence for preferential minority-spin injection is obtained from the circular polarization of the electroluminescence in GaAs/(In,Ga)As light-emitting diodes (LED). The spin-injection efficiency of 6% at the MnAs/GaAs interface is estimated on the basis of spin-relaxation times extracted from time-resolved photoluminescence measurements. This efficiency, as well as the preferential spin orientation, resembles very much the injection behavior found for epitaxial Fe layers. The results do not depend on the azimuthal orientation of the epitaxial MnAs injection layer.

AB - The spin injection into GaAs has been studied for the ferromagnetic metal MnAs. Evidence for preferential minority-spin injection is obtained from the circular polarization of the electroluminescence in GaAs/(In,Ga)As light-emitting diodes (LED). The spin-injection efficiency of 6% at the MnAs/GaAs interface is estimated on the basis of spin-relaxation times extracted from time-resolved photoluminescence measurements. This efficiency, as well as the preferential spin orientation, resembles very much the injection behavior found for epitaxial Fe layers. The results do not depend on the azimuthal orientation of the epitaxial MnAs injection layer.

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Electrical spin injection from ferromagnetic MnAs metal layers into GaAs

Abstract

ASJC Scopus subject areas

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