Electrically isolated metal-semiconductor field effect transistors and logic circuits on homoepitaxial diamonds

Hiroshi Kawarada, M. Itoh, A. Hokazono

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    Abstract

    Isolated metal-semiconductor field effect transistors (MESFETs) have been fabricated on homoepitaxial diamonds grown by microwave plasma chemical vapor deposition. Source, drain and channel regions are fabricated using the surface p-type semiconductive layer unique to hydrogen-terminated diamond surfaces. Other areas are irradiated by an argon beam to obtain highly resistive regions. The maximum transconductance of the isolated MESFETs with 7 μm gate length is 4.5 mS/mm, which is comparable to that of silicon MOSFET with the same gate length. NOT, NAND, NOR, and R-S flip-flop circuits have been fabricated for the first time on diamond using enhancement-mode active loads.

    Original languageEnglish
    JournalJapanese Journal of Applied Physics, Part 2: Letters
    Volume35
    Issue number9 B
    Publication statusPublished - 1996

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    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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