Electrically isolated metal-semiconductor field effect transistors and logic circuits on homoepitaxial diamonds

H. Kawarada, M. Itoh, A. Hokazono

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

Isolated metal-semiconductor field effect transistors (MESFETs) have been fabricated on homoepitaxial diamonds grown by microwave plasma chemical vapor deposition. Source, drain and channel regions are fabricated using the surface p-type semiconductive layer unique to hydrogen-terminated diamond surfaces. Other areas are irradiated by an argon beam to obtain highly resistive regions. The maximum transconductance of the isolated MESFETs with 7 μm gate length is 4.5 mS/mm, which is comparable to that of silicon MOSFET with the same gate length. NOT, NAND, NOR, and R-S flip-flop circuits have been fabricated for the first time on diamond using enhancement-mode active loads.

Original languageEnglish
Pages (from-to)L1165-L1168
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume35
Issue number9 B
DOIs
Publication statusPublished - 1996 Jan 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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