Electrically isolated metal-semiconductor field effect transistors and logic circuits on homoepitaxial diamonds

Hiroshi Kawarada, M. Itoh, A. Hokazono

    Research output: Contribution to journalArticle

    24 Citations (Scopus)

    Abstract

    Isolated metal-semiconductor field effect transistors (MESFETs) have been fabricated on homoepitaxial diamonds grown by microwave plasma chemical vapor deposition. Source, drain and channel regions are fabricated using the surface p-type semiconductive layer unique to hydrogen-terminated diamond surfaces. Other areas are irradiated by an argon beam to obtain highly resistive regions. The maximum transconductance of the isolated MESFETs with 7 μm gate length is 4.5 mS/mm, which is comparable to that of silicon MOSFET with the same gate length. NOT, NAND, NOR, and R-S flip-flop circuits have been fabricated for the first time on diamond using enhancement-mode active loads.

    Original languageEnglish
    JournalJapanese Journal of Applied Physics, Part 2: Letters
    Volume35
    Issue number9 B
    Publication statusPublished - 1996

    Fingerprint

    MESFET devices
    transistor circuits
    logic circuits
    Logic circuits
    Diamonds
    field effect transistors
    diamonds
    metals
    flip-flops
    Flip flop circuits
    Transconductance
    transconductance
    Argon
    Chemical vapor deposition
    Microwaves
    argon
    vapor deposition
    Plasmas
    microwaves
    Silicon

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    @article{903aaa6430544178aef4f4cb209a4027,
    title = "Electrically isolated metal-semiconductor field effect transistors and logic circuits on homoepitaxial diamonds",
    abstract = "Isolated metal-semiconductor field effect transistors (MESFETs) have been fabricated on homoepitaxial diamonds grown by microwave plasma chemical vapor deposition. Source, drain and channel regions are fabricated using the surface p-type semiconductive layer unique to hydrogen-terminated diamond surfaces. Other areas are irradiated by an argon beam to obtain highly resistive regions. The maximum transconductance of the isolated MESFETs with 7 μm gate length is 4.5 mS/mm, which is comparable to that of silicon MOSFET with the same gate length. NOT, NAND, NOR, and R-S flip-flop circuits have been fabricated for the first time on diamond using enhancement-mode active loads.",
    author = "Hiroshi Kawarada and M. Itoh and A. Hokazono",
    year = "1996",
    language = "English",
    volume = "35",
    journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
    issn = "0021-4922",
    publisher = "Japan Society of Applied Physics",
    number = "9 B",

    }

    TY - JOUR

    T1 - Electrically isolated metal-semiconductor field effect transistors and logic circuits on homoepitaxial diamonds

    AU - Kawarada, Hiroshi

    AU - Itoh, M.

    AU - Hokazono, A.

    PY - 1996

    Y1 - 1996

    N2 - Isolated metal-semiconductor field effect transistors (MESFETs) have been fabricated on homoepitaxial diamonds grown by microwave plasma chemical vapor deposition. Source, drain and channel regions are fabricated using the surface p-type semiconductive layer unique to hydrogen-terminated diamond surfaces. Other areas are irradiated by an argon beam to obtain highly resistive regions. The maximum transconductance of the isolated MESFETs with 7 μm gate length is 4.5 mS/mm, which is comparable to that of silicon MOSFET with the same gate length. NOT, NAND, NOR, and R-S flip-flop circuits have been fabricated for the first time on diamond using enhancement-mode active loads.

    AB - Isolated metal-semiconductor field effect transistors (MESFETs) have been fabricated on homoepitaxial diamonds grown by microwave plasma chemical vapor deposition. Source, drain and channel regions are fabricated using the surface p-type semiconductive layer unique to hydrogen-terminated diamond surfaces. Other areas are irradiated by an argon beam to obtain highly resistive regions. The maximum transconductance of the isolated MESFETs with 7 μm gate length is 4.5 mS/mm, which is comparable to that of silicon MOSFET with the same gate length. NOT, NAND, NOR, and R-S flip-flop circuits have been fabricated for the first time on diamond using enhancement-mode active loads.

    UR - http://www.scopus.com/inward/record.url?scp=0030232185&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0030232185&partnerID=8YFLogxK

    M3 - Article

    VL - 35

    JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    SN - 0021-4922

    IS - 9 B

    ER -