Electrochemical behavior of methyl- and butyl- terminated Si(111) in aqueous solution

Daisuke Niwa; Tomoyuki Inoue; Hiroshi Fukunaga; Toru Akasaka; Taro Yamada; Takayuki Homma; Tetsuya Osaka

doi:10.1246/cl.2004.284

Electrochemical behavior of methyl- and butyl- terminated Si(111) in aqueous solution

Daisuke Niwa, Tomoyuki Inoue, Hiroshi Fukunaga, Toru Akasaka, Taro Yamada, Takayuki Homma, Tetsuya Osaka

Research Organization for Nano & Life Innovation

Research output: Contribution to journal › Article

21 Citations (Scopus)

Abstract

Formation of the methyl- and n-butyl monolayer on (Cl)-Si(111) surfaces by using the Grignard reaction and their electrochemical behavior was investigated. The modified Si(111) surfaces were indicated to be closely packed with a single moiety species. The methyl-modified Si(111) surface was composed of (1 x 1) adlattice structure. The methyl-modified surface was stable in aqueous solution, and showed essentially good electrical conductive property with p-n junction like behavior.

Original language	English
Pages (from-to)	284-285
Number of pages	2
Journal	Chemistry Letters
Volume	33
Issue number	3
DOIs	https://doi.org/10.1246/cl.2004.284
Publication status	Published - 2004 Mar

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Chemistry(all)

Cite this

Niwa, D., Inoue, T., Fukunaga, H., Akasaka, T., Yamada, T., Homma, T., & Osaka, T. (2004). Electrochemical behavior of methyl- and butyl- terminated Si(111) in aqueous solution. Chemistry Letters, 33(3), 284-285. https://doi.org/10.1246/cl.2004.284

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AU - Niwa, Daisuke

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AU - Fukunaga, Hiroshi

AU - Akasaka, Toru

AU - Yamada, Taro

AU - Homma, Takayuki

AU - Osaka, Tetsuya

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AB - Formation of the methyl- and n-butyl monolayer on (Cl)-Si(111) surfaces by using the Grignard reaction and their electrochemical behavior was investigated. The modified Si(111) surfaces were indicated to be closely packed with a single moiety species. The methyl-modified Si(111) surface was composed of (1 x 1) adlattice structure. The methyl-modified surface was stable in aqueous solution, and showed essentially good electrical conductive property with p-n junction like behavior.

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10.1246/cl.2004.284