Electrochemical etching process to tune the diameter of arrayed deep pores by controlling carrier collection at a semiconductor-electrolyte interface

Hirotaka Sato, Takuya Yamaguchi, Tetsuhiko Isobe, Shuichi Shoji, Takayuki Homma

    Research output: Contribution to journalArticle

    6 Citations (Scopus)

    Abstract

    An approach to control the diameter of high-aspect-ratio pores formed into a silicon wafer by an electrochemical etching process is reported. Hole (h +) was involved in the etching reaction and the collection of the h+ was the key factor. Artificial micro-cavities were fabricated on the silicon surface prior to the etching. The depth of the space charge region (SCR), Schottky barrier on the silicon-electrolyte interface, was adjusted regarding the depth of the micro-cavities by applied overpotential and specific resistance of the silicon wafer. The collection of h+ at the tip of the cavity site was widely controlled by the adjusted SCR. Consequently the electrochemically etched domain at the cavity site was actively tuned, and then high-aspect-ratio pore with the controlled diameter was formed. The diameter was tuned by the SCR depth which was controlled by the overpotential and the specific resistance. The diameter tuning mechanism worked under the mask-free condition.

    Original languageEnglish
    Pages (from-to)765-768
    Number of pages4
    JournalElectrochemistry Communications
    Volume12
    Issue number6
    DOIs
    Publication statusPublished - 2010 Jun

    Fingerprint

    Electrochemical etching
    Electric space charge
    Electrolytes
    Silicon
    Semiconductor materials
    Silicon wafers
    Aspect ratio
    Etching
    Masks
    Tuning

    Keywords

    • Electrochemical etching
    • High-aspect-ratio structure
    • Maskless fabrication
    • Porous silicon
    • Semiconductor-electrolyte interface
    • Space charge region (SCR)

    ASJC Scopus subject areas

    • Electrochemistry

    Cite this

    Electrochemical etching process to tune the diameter of arrayed deep pores by controlling carrier collection at a semiconductor-electrolyte interface. / Sato, Hirotaka; Yamaguchi, Takuya; Isobe, Tetsuhiko; Shoji, Shuichi; Homma, Takayuki.

    In: Electrochemistry Communications, Vol. 12, No. 6, 06.2010, p. 765-768.

    Research output: Contribution to journalArticle

    @article{4e37b4e31c1140a3b4d79df087e88cac,
    title = "Electrochemical etching process to tune the diameter of arrayed deep pores by controlling carrier collection at a semiconductor-electrolyte interface",
    abstract = "An approach to control the diameter of high-aspect-ratio pores formed into a silicon wafer by an electrochemical etching process is reported. Hole (h +) was involved in the etching reaction and the collection of the h+ was the key factor. Artificial micro-cavities were fabricated on the silicon surface prior to the etching. The depth of the space charge region (SCR), Schottky barrier on the silicon-electrolyte interface, was adjusted regarding the depth of the micro-cavities by applied overpotential and specific resistance of the silicon wafer. The collection of h+ at the tip of the cavity site was widely controlled by the adjusted SCR. Consequently the electrochemically etched domain at the cavity site was actively tuned, and then high-aspect-ratio pore with the controlled diameter was formed. The diameter was tuned by the SCR depth which was controlled by the overpotential and the specific resistance. The diameter tuning mechanism worked under the mask-free condition.",
    keywords = "Electrochemical etching, High-aspect-ratio structure, Maskless fabrication, Porous silicon, Semiconductor-electrolyte interface, Space charge region (SCR)",
    author = "Hirotaka Sato and Takuya Yamaguchi and Tetsuhiko Isobe and Shuichi Shoji and Takayuki Homma",
    year = "2010",
    month = "6",
    doi = "10.1016/j.elecom.2010.03.028",
    language = "English",
    volume = "12",
    pages = "765--768",
    journal = "Electrochemistry Communications",
    issn = "1388-2481",
    publisher = "Elsevier Inc.",
    number = "6",

    }

    TY - JOUR

    T1 - Electrochemical etching process to tune the diameter of arrayed deep pores by controlling carrier collection at a semiconductor-electrolyte interface

    AU - Sato, Hirotaka

    AU - Yamaguchi, Takuya

    AU - Isobe, Tetsuhiko

    AU - Shoji, Shuichi

    AU - Homma, Takayuki

    PY - 2010/6

    Y1 - 2010/6

    N2 - An approach to control the diameter of high-aspect-ratio pores formed into a silicon wafer by an electrochemical etching process is reported. Hole (h +) was involved in the etching reaction and the collection of the h+ was the key factor. Artificial micro-cavities were fabricated on the silicon surface prior to the etching. The depth of the space charge region (SCR), Schottky barrier on the silicon-electrolyte interface, was adjusted regarding the depth of the micro-cavities by applied overpotential and specific resistance of the silicon wafer. The collection of h+ at the tip of the cavity site was widely controlled by the adjusted SCR. Consequently the electrochemically etched domain at the cavity site was actively tuned, and then high-aspect-ratio pore with the controlled diameter was formed. The diameter was tuned by the SCR depth which was controlled by the overpotential and the specific resistance. The diameter tuning mechanism worked under the mask-free condition.

    AB - An approach to control the diameter of high-aspect-ratio pores formed into a silicon wafer by an electrochemical etching process is reported. Hole (h +) was involved in the etching reaction and the collection of the h+ was the key factor. Artificial micro-cavities were fabricated on the silicon surface prior to the etching. The depth of the space charge region (SCR), Schottky barrier on the silicon-electrolyte interface, was adjusted regarding the depth of the micro-cavities by applied overpotential and specific resistance of the silicon wafer. The collection of h+ at the tip of the cavity site was widely controlled by the adjusted SCR. Consequently the electrochemically etched domain at the cavity site was actively tuned, and then high-aspect-ratio pore with the controlled diameter was formed. The diameter was tuned by the SCR depth which was controlled by the overpotential and the specific resistance. The diameter tuning mechanism worked under the mask-free condition.

    KW - Electrochemical etching

    KW - High-aspect-ratio structure

    KW - Maskless fabrication

    KW - Porous silicon

    KW - Semiconductor-electrolyte interface

    KW - Space charge region (SCR)

    UR - http://www.scopus.com/inward/record.url?scp=77955716132&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=77955716132&partnerID=8YFLogxK

    U2 - 10.1016/j.elecom.2010.03.028

    DO - 10.1016/j.elecom.2010.03.028

    M3 - Article

    AN - SCOPUS:77955716132

    VL - 12

    SP - 765

    EP - 768

    JO - Electrochemistry Communications

    JF - Electrochemistry Communications

    SN - 1388-2481

    IS - 6

    ER -