Electrochemical evaluation and finite element structure analysis of Si wafer surface under mechanical stress

K. Sakata, T. Homma

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effect of mechanical strain on the surface properties of Si wafer was investigated as a model experiment to evaluate the correlation between the degree of the strain and the electrochemical properties of the Si wafer surface. Finite element structure analysis was applied to estimate the degree of strain, and the open circuit potential measurement was carried out to investigate the surface electrochemical property. The results of these experiments suggested that the mechanical stress induces strain to the Si crystal structure to change the surface reactivity.

Original languageEnglish
Title of host publicationECS Transactions - Solid State - General - 214th ECS Meeting/RRiME 2008
Pages79-86
Number of pages8
Edition40
DOIs
Publication statusPublished - 2009 Nov 23
EventSolid State - General - 214th ECS Meeting/RRiME 2008 - Honolulu, HI, United States
Duration: 2008 Oct 122008 Oct 17

Publication series

NameECS Transactions
Number40
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSolid State - General - 214th ECS Meeting/RRiME 2008
CountryUnited States
CityHonolulu, HI
Period08/10/1208/10/17

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Electrochemical evaluation and finite element structure analysis of Si wafer surface under mechanical stress'. Together they form a unique fingerprint.

  • Cite this

    Sakata, K., & Homma, T. (2009). Electrochemical evaluation and finite element structure analysis of Si wafer surface under mechanical stress. In ECS Transactions - Solid State - General - 214th ECS Meeting/RRiME 2008 (40 ed., pp. 79-86). (ECS Transactions; Vol. 16, No. 40). https://doi.org/10.1149/1.3108356