Electrochemical evaluation and finite element structure analysis of Si wafer surface under mechanical stress

K. Sakata, Takayuki Homma

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    The effect of mechanical strain on the surface properties of Si wafer was investigated as a model experiment to evaluate the correlation between the degree of the strain and the electrochemical properties of the Si wafer surface. Finite element structure analysis was applied to estimate the degree of strain, and the open circuit potential measurement was carried out to investigate the surface electrochemical property. The results of these experiments suggested that the mechanical stress induces strain to the Si crystal structure to change the surface reactivity.

    Original languageEnglish
    Title of host publicationECS Transactions
    Pages79-86
    Number of pages8
    Volume16
    Edition40
    DOIs
    Publication statusPublished - 2009
    EventSolid State - General - 214th ECS Meeting/RRiME 2008 - Honolulu, HI
    Duration: 2008 Oct 122008 Oct 17

    Other

    OtherSolid State - General - 214th ECS Meeting/RRiME 2008
    CityHonolulu, HI
    Period08/10/1208/10/17

    Fingerprint

    Electrochemical properties
    Surface properties
    Crystal structure
    Experiments
    Networks (circuits)

    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

    Electrochemical evaluation and finite element structure analysis of Si wafer surface under mechanical stress. / Sakata, K.; Homma, Takayuki.

    ECS Transactions. Vol. 16 40. ed. 2009. p. 79-86.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Sakata, K & Homma, T 2009, Electrochemical evaluation and finite element structure analysis of Si wafer surface under mechanical stress. in ECS Transactions. 40 edn, vol. 16, pp. 79-86, Solid State - General - 214th ECS Meeting/RRiME 2008, Honolulu, HI, 08/10/12. https://doi.org/10.1149/1.3108356
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    abstract = "The effect of mechanical strain on the surface properties of Si wafer was investigated as a model experiment to evaluate the correlation between the degree of the strain and the electrochemical properties of the Si wafer surface. Finite element structure analysis was applied to estimate the degree of strain, and the open circuit potential measurement was carried out to investigate the surface electrochemical property. The results of these experiments suggested that the mechanical stress induces strain to the Si crystal structure to change the surface reactivity.",
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