Electrochemical potential measurement and finite element structure analysis of Si wafer surface under mechanical stress

Kaoruho Sakata, Takayuki Homma

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    1 Citation (Scopus)


    Mechanical stress was applied to a Si single crystal wafer to evaluate the changes in its surface properties arising from the lattice strain induced by mechanical stress. The stress was applied quantitatively to the wafer in order to investigate the correlation between the degree of strain and the electrochemical properties of its surface. Finite element method (FEM) structural analysis was used to estimate the degree of strain on the surface, and the open circuit potential was measured in order to investigate the surface electrochemical properties. The analysis suggested that the surface of the wafer was under tensile strain, and the open circuit potential shifted toward the negative direction with the strain. This indicates that mechanical stress applied to a Si surface can change its electronic properties by changing the surface crystal structure.

    Original languageEnglish
    Pages (from-to)144-146
    Number of pages3
    JournalElectrochemistry Communications
    Issue number1
    Publication statusPublished - 2012 Nov



    • Electrochemical potential measurement
    • Mechanical stress
    • Open circuit potential
    • Strained silicon

    ASJC Scopus subject areas

    • Electrochemistry

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