ELECTROCHEMICAL STUDY ON ANION DOPING-UNDOPING PROCESS OF POLYACETYLENE BY MEANS OF FFT IMPEDANCE MEASUREMENT.

Tetsuya Osaka; Takashi Kitai

doi:10.1246/bcsj.57.759

ELECTROCHEMICAL STUDY ON ANION DOPING-UNDOPING PROCESS OF POLYACETYLENE BY MEANS OF FFT IMPEDANCE MEASUREMENT.

Tetsuya Osaka, Takashi Kitai

Research Organization for Nano & Life Innovation

Research output: Contribution to journal › Article

11 Citations (Scopus)

Abstract

An electrochemical anion doping-undoping process of cis-polyacetylene, (CH)//x, was investigated in 1 mol dm** minus **3 LiClO//4 or LiBF//4 in propylene carbonate by the FFT impedance measurement. This could be applied to the system with time-variation because of its high speed measuring duration. The doping-undoping process of the anion was represented by the Randles-type equivalent circuit, considering the corrective term concerned with surface roughness. The impedance behavior of the doping-undoping process was pursued by the variation of resistive component, Rr. The value of Rr was mainly reflected by the dopant concentration at the surface.

Original language	English
Pages (from-to)	759-762
Number of pages	4
Journal	Bulletin of the Chemical Society of Japan
Volume	57
Issue number	3
DOIs	https://doi.org/10.1246/bcsj.57.759
Publication status	Published - 1984 Jan 1

ASJC Scopus subject areas

Chemistry(all)

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10.1246/bcsj.57.759

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Osaka, T., & Kitai, T. (1984). ELECTROCHEMICAL STUDY ON ANION DOPING-UNDOPING PROCESS OF POLYACETYLENE BY MEANS OF FFT IMPEDANCE MEASUREMENT. Bulletin of the Chemical Society of Japan, 57(3), 759-762. https://doi.org/10.1246/bcsj.57.759

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abstract = "An electrochemical anion doping-undoping process of cis-polyacetylene, (CH)//x, was investigated in 1 mol dm** minus **3 LiClO//4 or LiBF//4 in propylene carbonate by the FFT impedance measurement. This could be applied to the system with time-variation because of its high speed measuring duration. The doping-undoping process of the anion was represented by the Randles-type equivalent circuit, considering the corrective term concerned with surface roughness. The impedance behavior of the doping-undoping process was pursued by the variation of resistive component, Rr. The value of Rr was mainly reflected by the dopant concentration at the surface.",

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