Electrodeposition of CuInTe2 film from an acidic solution

T. Ishizaki, N. Saito, A. Fuwa

    Research output: Contribution to journalArticle

    19 Citations (Scopus)

    Abstract

    Copper-indium-telluride films were electrochemically deposited from solutions containing CuCl2, InCl3, TeO2 and HCl. Although a flat and smooth film with closely stoichiometric composition was deposited at -660 mV vs. Ag/AgCl at 303 K from a solution of 2.5×10-4 mol dm-3 CuCl2, 1.0×10-2 mol dm-3 InCl3, 5.0×10-4 mol dm-3 TeO2 and 0.1 mol dm-3 HCl, a polycrystalline CuInTe2 film was not obtained. Increasing the temperature from 303 to 363 K allowed the deposition at lower overpotential of a polycrystalline CuInTe2 film with closely stoichiometric composition and increased indium content. The band gap of the polycrystalline CuInTe2 film electrodeposited at 363 K at -660 mV was 0.98 eV.

    Original languageEnglish
    Pages (from-to)159-160
    Number of pages2
    JournalSurface and Coatings Technology
    Volume182
    Issue number2-3
    DOIs
    Publication statusPublished - 2004 Apr 22

    Keywords

    • Copper-indium-telluride
    • Deposition process
    • Electrochemistry

    ASJC Scopus subject areas

    • Surfaces, Coatings and Films
    • Condensed Matter Physics
    • Surfaces and Interfaces

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