Electrodeposition of Gold Electrode on Silicon Wafers for Submillimeter-wave Devices

Mikiko Saito, Hiroyuki Seto, Yoshiyuki Inoue, Jiro Hirokawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The investigation of waveguide type submillimeter-wave (100 GHz-1 THz) antennas using Si wafers was performed. Si wafers were modified by the dry etching technique, followed by the through Si vias and Au films being deposited on the front, back, and the interior Si through a catalyzing process. The interior Si was used as the waveguide for the submillimeter-wavedevices. Using these modified Si wafers, two catalyzing processes were investigated, namely, a Sn-Pd process, and a self-assembled monolayer (SAM) process. In order to strengthen the adhesion force of the deposited films and the Si wafer, a Cr film was formed on both sides of the Si wafers. After the catalyzing process, electroless Ni deposited film was formed, followed by electrodeposited Au. It was confirmed that this structure worked as an antenna in the submillimeter-wave band.

Original languageEnglish
Title of host publication2018 7th Electronic System-Integration Technology Conference, ESTC 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538668139
DOIs
Publication statusPublished - 2018 Nov 26
Event7th Electronic System-Integration Technology Conference, ESTC 2018 - Dresden, Germany
Duration: 2018 Sep 182018 Sep 21

Other

Other7th Electronic System-Integration Technology Conference, ESTC 2018
CountryGermany
CityDresden
Period18/9/1818/9/21

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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    Saito, M., Seto, H., Inoue, Y., & Hirokawa, J. (2018). Electrodeposition of Gold Electrode on Silicon Wafers for Submillimeter-wave Devices. In 2018 7th Electronic System-Integration Technology Conference, ESTC 2018 - Proceedings [8546341] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ESTC.2018.8546341