Electrodeposition of Si film from water-soluble KF-KCl molten salt and feasibility of SiCl4 as a Si source

Kouji Yasuda, Kazumi Saeki, Kazuma Maeda, Toshiyuki Nohira, Rika Hagiwara, Takayuki Homma

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Toward an establishment of a new production method of solar cell substrates, electrodeposition of Si was investigated in molten KF-KCl (eutectic composition, 45:55 mol%) after the introduction of SiCl4. Gaseous SiCl4 was directly introduced into the molten salt at 1023 K by a vapor transport method using Ar carrier gas. The dissolution ratio of SiCl4 exceeded 80% even with the use of a simple tube for the bubbling. Galvanostatic electrolysis was conducted at 923 K on a Ag substrate at 155 mA cm-2 for 20 min in molten KF-KCl after the dissolution of 2.30 mol% SiCl4. Although compact Si layer was formed, the smoothness was lower compared to that obtained from the melt after the addition of K2SiF6. The anionic molar fraction is probably one of the factors affecting the morphology of deposit.

Original languageEnglish
Title of host publicationMolten Salts and Ionic Liquids 20
EditorsM. Carter, F. Endres, E. J. Biddinger, M. Reichert, A. Ispas, H. C. De Long, A. Bund, L. M. Haverhals, R. A. Mantz, P. C. Trulove, D. M. Fox, A. H. Suroviec, M. Ueda
PublisherElectrochemical Society Inc.
Pages593-601
Number of pages9
Edition15
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2016
EventSymposium on Molten Salts and Ionic Liquids 20 - PRiME 2016/230th ECS Meeting - Honolulu, United States
Duration: 2016 Oct 22016 Oct 7

Publication series

NameECS Transactions
Number15
Volume75
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSymposium on Molten Salts and Ionic Liquids 20 - PRiME 2016/230th ECS Meeting
Country/TerritoryUnited States
CityHonolulu
Period16/10/216/10/7

ASJC Scopus subject areas

  • Engineering(all)

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