Electrodeposition of Si film from water-soluble KF-KCl molten salt and feasibility of SiCl4 as a Si source

Kouji Yasuda, Kazumi Saeki, Kazuma Maeda, Toshiyuki Nohira, Rika Hagiwara, Takayuki Homma

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Toward an establishment of a new production method of solar cell substrates, electrodeposition of Si was investigated in molten KF-KCl (eutectic composition, 45:55 mol%) after the introduction of SiCl4. Gaseous SiCl4 was directly introduced into the molten salt at 1023 K by a vapor transport method using Ar carrier gas. The dissolution ratio of SiCl4 exceeded 80% even with the use of a simple tube for the bubbling. Galvanostatic electrolysis was conducted at 923 K on a Ag substrate at 155 mA cm-2 for 20 min in molten KF-KCl after the dissolution of 2.30 mol% SiCl4. Although compact Si layer was formed, the smoothness was lower compared to that obtained from the melt after the addition of K2SiF6. The anionic molar fraction is probably one of the factors affecting the morphology of deposit.

    Original languageEnglish
    Title of host publicationMolten Salts and Ionic Liquids 20
    PublisherElectrochemical Society Inc.
    Pages593-601
    Number of pages9
    Volume75
    Edition15
    ISBN (Electronic)9781607685395
    DOIs
    Publication statusPublished - 2016
    EventSymposium on Molten Salts and Ionic Liquids 20 - PRiME 2016/230th ECS Meeting - Honolulu, United States
    Duration: 2016 Oct 22016 Oct 7

    Other

    OtherSymposium on Molten Salts and Ionic Liquids 20 - PRiME 2016/230th ECS Meeting
    CountryUnited States
    CityHonolulu
    Period16/10/216/10/7

    Fingerprint

    Electrodeposition
    Molten materials
    Salts
    Dissolution
    Water
    Substrates
    Electrolysis
    Eutectics
    Solar cells
    Deposits
    Vapors
    Chemical analysis
    Gases

    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

    Yasuda, K., Saeki, K., Maeda, K., Nohira, T., Hagiwara, R., & Homma, T. (2016). Electrodeposition of Si film from water-soluble KF-KCl molten salt and feasibility of SiCl4 as a Si source. In Molten Salts and Ionic Liquids 20 (15 ed., Vol. 75, pp. 593-601). Electrochemical Society Inc.. https://doi.org/10.1149/07515.0593ecst

    Electrodeposition of Si film from water-soluble KF-KCl molten salt and feasibility of SiCl4 as a Si source. / Yasuda, Kouji; Saeki, Kazumi; Maeda, Kazuma; Nohira, Toshiyuki; Hagiwara, Rika; Homma, Takayuki.

    Molten Salts and Ionic Liquids 20. Vol. 75 15. ed. Electrochemical Society Inc., 2016. p. 593-601.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Yasuda, K, Saeki, K, Maeda, K, Nohira, T, Hagiwara, R & Homma, T 2016, Electrodeposition of Si film from water-soluble KF-KCl molten salt and feasibility of SiCl4 as a Si source. in Molten Salts and Ionic Liquids 20. 15 edn, vol. 75, Electrochemical Society Inc., pp. 593-601, Symposium on Molten Salts and Ionic Liquids 20 - PRiME 2016/230th ECS Meeting, Honolulu, United States, 16/10/2. https://doi.org/10.1149/07515.0593ecst
    Yasuda K, Saeki K, Maeda K, Nohira T, Hagiwara R, Homma T. Electrodeposition of Si film from water-soluble KF-KCl molten salt and feasibility of SiCl4 as a Si source. In Molten Salts and Ionic Liquids 20. 15 ed. Vol. 75. Electrochemical Society Inc. 2016. p. 593-601 https://doi.org/10.1149/07515.0593ecst
    Yasuda, Kouji ; Saeki, Kazumi ; Maeda, Kazuma ; Nohira, Toshiyuki ; Hagiwara, Rika ; Homma, Takayuki. / Electrodeposition of Si film from water-soluble KF-KCl molten salt and feasibility of SiCl4 as a Si source. Molten Salts and Ionic Liquids 20. Vol. 75 15. ed. Electrochemical Society Inc., 2016. pp. 593-601
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    abstract = "Toward an establishment of a new production method of solar cell substrates, electrodeposition of Si was investigated in molten KF-KCl (eutectic composition, 45:55 mol{\%}) after the introduction of SiCl4. Gaseous SiCl4 was directly introduced into the molten salt at 1023 K by a vapor transport method using Ar carrier gas. The dissolution ratio of SiCl4 exceeded 80{\%} even with the use of a simple tube for the bubbling. Galvanostatic electrolysis was conducted at 923 K on a Ag substrate at 155 mA cm-2 for 20 min in molten KF-KCl after the dissolution of 2.30 mol{\%} SiCl4. Although compact Si layer was formed, the smoothness was lower compared to that obtained from the melt after the addition of K2SiF6. The anionic molar fraction is probably one of the factors affecting the morphology of deposit.",
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    AU - Hagiwara, Rika

    AU - Homma, Takayuki

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