Electrodeposition of Si film from water-soluble KF-KCl molten salt and feasibility of SiCl4 as a Si source

Kouji Yasuda; Kazumi Saeki; Kazuma Maeda; Toshiyuki Nohira; Rika Hagiwara; Takayuki Homma

doi:10.1149/07515.0593ecst

Electrodeposition of Si film from water-soluble KF-KCl molten salt and feasibility of SiCl₄ as a Si source

Kouji Yasuda, Kazumi Saeki, Kazuma Maeda, Toshiyuki Nohira, Rika Hagiwara, Takayuki Homma

School of Advanced Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Toward an establishment of a new production method of solar cell substrates, electrodeposition of Si was investigated in molten KF-KCl (eutectic composition, 45:55 mol%) after the introduction of SiCl₄. Gaseous SiCl₄ was directly introduced into the molten salt at 1023 K by a vapor transport method using Ar carrier gas. The dissolution ratio of SiCl₄ exceeded 80% even with the use of a simple tube for the bubbling. Galvanostatic electrolysis was conducted at 923 K on a Ag substrate at 155 mA cm-2 for 20 min in molten KF-KCl after the dissolution of 2.30 mol% SiCl₄. Although compact Si layer was formed, the smoothness was lower compared to that obtained from the melt after the addition of K2SiF6. The anionic molar fraction is probably one of the factors affecting the morphology of deposit.

Original language	English
Title of host publication	Molten Salts and Ionic Liquids 20
Editors	L. M. Haverhals, R. A. Mantz, P. C. Trulove, M. Ueda, M. Carter, E. J. Biddinger, A. H. Suroviec, M. Reichert, F. Endres, A. Bund, A. Ispas, D. M. Fox, H. C. De Long
Publisher	Electrochemical Society Inc.
Pages	593-601
Number of pages	9
Edition	15
ISBN (Electronic)	9781607687320, 9781607687672, 9781607687689, 9781607687696, 9781607687702, 9781607687719, 9781607687726, 9781607687733, 9781607687740, 9781607687757, 9781607687771, 9781607687788, 9781607687795, 9781607687801, 9781607687818, 9781607687825, 9781607687832, 9781607687849, 9781607687856, 9781607687863, 9781607687887, 9781607687894, 9781607687900, 9781607687917, 9781607687924, 9781607687931, 9781607687948, 9781607687955, 9781607687962, 9781607687979, 9781607687986, 9781607687993, 9781607688006, 9781607688013, 9781607688020, 9781607688037
DOIs	https://doi.org/10.1149/07515.0593ecst
Publication status	Published - 2016
Event	Symposium on Molten Salts and Ionic Liquids 20 - PRiME 2016/230th ECS Meeting - Honolulu, United States Duration: 2016 Oct 2 → 2016 Oct 7

Publication series

Name	ECS Transactions
Number	15
Volume	75
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Other

Other	Symposium on Molten Salts and Ionic Liquids 20 - PRiME 2016/230th ECS Meeting
Country/Territory	United States
City	Honolulu
Period	16/10/2 → 16/10/7

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/07515.0593ecst

Cite this

Yasuda, K., Saeki, K., Maeda, K., Nohira, T., Hagiwara, R., & Homma, T. (2016). Electrodeposition of Si film from water-soluble KF-KCl molten salt and feasibility of SiCl₄ as a Si source. In L. M. Haverhals, R. A. Mantz, P. C. Trulove, M. Ueda, M. Carter, E. J. Biddinger, A. H. Suroviec, M. Reichert, F. Endres, A. Bund, A. Ispas, D. M. Fox, & H. C. De Long (Eds.), Molten Salts and Ionic Liquids 20 (15 ed., pp. 593-601). (ECS Transactions; Vol. 75, No. 15). Electrochemical Society Inc.. https://doi.org/10.1149/07515.0593ecst

Electrodeposition of Si film from water-soluble KF-KCl molten salt and feasibility of SiCl₄ as a Si source. / Yasuda, Kouji; Saeki, Kazumi; Maeda, Kazuma et al.

Molten Salts and Ionic Liquids 20. ed. / L. M. Haverhals; R. A. Mantz; P. C. Trulove; M. Ueda; M. Carter; E. J. Biddinger; A. H. Suroviec; M. Reichert; F. Endres; A. Bund; A. Ispas; D. M. Fox; H. C. De Long. 15. ed. Electrochemical Society Inc., 2016. p. 593-601 (ECS Transactions; Vol. 75, No. 15).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yasuda, K, Saeki, K, Maeda, K, Nohira, T, Hagiwara, R & Homma, T 2016, Electrodeposition of Si film from water-soluble KF-KCl molten salt and feasibility of SiCl₄ as a Si source. in LM Haverhals, RA Mantz, PC Trulove, M Ueda, M Carter, EJ Biddinger, AH Suroviec, M Reichert, F Endres, A Bund, A Ispas, DM Fox & HC De Long (eds), Molten Salts and Ionic Liquids 20. 15 edn, ECS Transactions, no. 15, vol. 75, Electrochemical Society Inc., pp. 593-601, Symposium on Molten Salts and Ionic Liquids 20 - PRiME 2016/230th ECS Meeting, Honolulu, United States, 16/10/2. https://doi.org/10.1149/07515.0593ecst

Yasuda K, Saeki K, Maeda K, Nohira T, Hagiwara R, Homma T. Electrodeposition of Si film from water-soluble KF-KCl molten salt and feasibility of SiCl₄ as a Si source. In Haverhals LM, Mantz RA, Trulove PC, Ueda M, Carter M, Biddinger EJ, Suroviec AH, Reichert M, Endres F, Bund A, Ispas A, Fox DM, De Long HC, editors, Molten Salts and Ionic Liquids 20. 15 ed. Electrochemical Society Inc. 2016. p. 593-601. (ECS Transactions; 15). doi: 10.1149/07515.0593ecst

Yasuda, Kouji ; Saeki, Kazumi ; Maeda, Kazuma et al. / Electrodeposition of Si film from water-soluble KF-KCl molten salt and feasibility of SiCl₄ as a Si source. Molten Salts and Ionic Liquids 20. editor / L. M. Haverhals ; R. A. Mantz ; P. C. Trulove ; M. Ueda ; M. Carter ; E. J. Biddinger ; A. H. Suroviec ; M. Reichert ; F. Endres ; A. Bund ; A. Ispas ; D. M. Fox ; H. C. De Long. 15. ed. Electrochemical Society Inc., 2016. pp. 593-601 (ECS Transactions; 15).

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abstract = "Toward an establishment of a new production method of solar cell substrates, electrodeposition of Si was investigated in molten KF-KCl (eutectic composition, 45:55 mol%) after the introduction of SiCl4. Gaseous SiCl4 was directly introduced into the molten salt at 1023 K by a vapor transport method using Ar carrier gas. The dissolution ratio of SiCl4 exceeded 80% even with the use of a simple tube for the bubbling. Galvanostatic electrolysis was conducted at 923 K on a Ag substrate at 155 mA cm-2 for 20 min in molten KF-KCl after the dissolution of 2.30 mol% SiCl4. Although compact Si layer was formed, the smoothness was lower compared to that obtained from the melt after the addition of K2SiF6. The anionic molar fraction is probably one of the factors affecting the morphology of deposit.",

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