Abstract
We attempted to form ZnO films with smooth surface for the application of thermoelectric micro-devices, using electrodeposition process. In order to reduce the defects of the films such as cracks and pits mainly caused by the gas evolution, the bath containing acetate in addition to nitrate ions was developed to reduce the gas evolution during the deposition. Using this bath, formation of ZnO. rather than Zn metallic films, was confirmed by Raman spectroscopy. The films had no cracks and the surface became smoother than those eiectrodeposited from the conventional nitrate-based bath. In order to fabricate the micro- devices, The ZnO was eiectrodeposited into the patterns with diameter of 200μm. As a result, ZnO successfully filled the pattern keeping the smooth surface conditions, which demonstrated the applicability of the ZnO films to micro-device fabrication.
| Original language | English |
|---|---|
| Title of host publication | General Student Poster Session |
| Publisher | Electrochemical Society Inc. |
| Pages | 143-148 |
| Number of pages | 6 |
| Volume | 75 |
| Edition | 52 |
| ISBN (Electronic) | 9781607685395 |
| DOIs | |
| Publication status | Published - 2016 Jan 1 |
| Event | Symposium on General Student Poster Session - PRiME 2016/230th ECS Meeting - Honolulu, United States Duration: 2016 Oct 2 → 2016 Oct 7 |
Other
| Other | Symposium on General Student Poster Session - PRiME 2016/230th ECS Meeting |
|---|---|
| Country | United States |
| City | Honolulu |
| Period | 16/10/2 → 16/10/7 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Electrodeposition of ZnO from acetate bath for thermoelectric devices. / Matsuo, H.; Yoshitoku, K.; Furuyama, D.; Saito, Mikiko; Homma, Takayuki.
General Student Poster Session. Vol. 75 52. ed. Electrochemical Society Inc., 2016. p. 143-148.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Electrodeposition of ZnO from acetate bath for thermoelectric devices
AU - Matsuo, H.
AU - Yoshitoku, K.
AU - Furuyama, D.
AU - Saito, Mikiko
AU - Homma, Takayuki
PY - 2016/1/1
Y1 - 2016/1/1
N2 - We attempted to form ZnO films with smooth surface for the application of thermoelectric micro-devices, using electrodeposition process. In order to reduce the defects of the films such as cracks and pits mainly caused by the gas evolution, the bath containing acetate in addition to nitrate ions was developed to reduce the gas evolution during the deposition. Using this bath, formation of ZnO. rather than Zn metallic films, was confirmed by Raman spectroscopy. The films had no cracks and the surface became smoother than those eiectrodeposited from the conventional nitrate-based bath. In order to fabricate the micro- devices, The ZnO was eiectrodeposited into the patterns with diameter of 200μm. As a result, ZnO successfully filled the pattern keeping the smooth surface conditions, which demonstrated the applicability of the ZnO films to micro-device fabrication.
AB - We attempted to form ZnO films with smooth surface for the application of thermoelectric micro-devices, using electrodeposition process. In order to reduce the defects of the films such as cracks and pits mainly caused by the gas evolution, the bath containing acetate in addition to nitrate ions was developed to reduce the gas evolution during the deposition. Using this bath, formation of ZnO. rather than Zn metallic films, was confirmed by Raman spectroscopy. The films had no cracks and the surface became smoother than those eiectrodeposited from the conventional nitrate-based bath. In order to fabricate the micro- devices, The ZnO was eiectrodeposited into the patterns with diameter of 200μm. As a result, ZnO successfully filled the pattern keeping the smooth surface conditions, which demonstrated the applicability of the ZnO films to micro-device fabrication.
UR - http://www.scopus.com/inward/record.url?scp=85025147923&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85025147923&partnerID=8YFLogxK
U2 - 10.1149/07552.0143ecst
DO - 10.1149/07552.0143ecst
M3 - Conference contribution
AN - SCOPUS:85025147923
VL - 75
SP - 143
EP - 148
BT - General Student Poster Session
PB - Electrochemical Society Inc.
ER -