Electroless diffusion barrier process using SAM on low-k dielectrics

M. Yoshino, T. Masuda, Tokihiko Yokoshima, J. Sasano, Y. Shacham-Diamand, I. Matsuda, Tetsuya Osaka, Y. Hagiwara, I. Sato

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A wet process based on electroless deposition is proposed for the formation of a diffusion barrier layer for Cu wiring in ultra-large scale integration (ULSI) technology. The diffusion barrier layer is formed on a low-dielectric constant (low- k) inter level film. In this process, a Pd-activated self-assembled monolayer as a seed/adhesion layer was used as a key step to allow electroless deposition on a dielectric film. The effectiveness of this approach was demonstrated by depositing an electroless NiB layer as the diffusion barrier layer. The electrolessly deposited NiB layer showed a uniform surface, a small grain size, and a high adhesion when deposited on various common inter level dielectric materials with low dielectric constant. The electrolessly deposited NiB layer formed on the low- k dielectric film by this method showed a high thermal stability of the effectiveness as a barrier to Cu diffusion at temperatures up to 400°C for 30 min. The electroless process was found to be reproducible and did not affect dielectric properties of the underlying insulator.

Original languageEnglish
JournalJournal of the Electrochemical Society
Issue number3
Publication statusPublished - 2007


ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Yoshino, M., Masuda, T., Yokoshima, T., Sasano, J., Shacham-Diamand, Y., Matsuda, I., Osaka, T., Hagiwara, Y., & Sato, I. (2007). Electroless diffusion barrier process using SAM on low-k dielectrics. Journal of the Electrochemical Society, 154(3). https://doi.org/10.1149/1.2426798