Electroluminescence from single 3D GaN nanowire grown by self-catalytic molecular beam epitaxy

C. E. Kendrick, R. Tilley, M. Kobayashi, R. J. Reeves, S. M. Durbin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

3-D branching GaN nanowires have been grown using the intermediate and Ga-rich growth regimes of plasma assisted molecular beam epitaxy. Evidence that the growth is due to an auto-catalytic VLS process is obtained through SEM images showing droplet termination heads, the composition of which is essentially pure Ga. TEM analysis revealed a defect free crystal structure, even in the trunk to branch junction. Cathodoluminescence from the trunk of the branching nanowires produced a strong luminescence feature at 3.44 eV, while a slight decrease in energy to 3.1 eV was observed at the interface between the nanowire and epilayer or kink site. No yellow luminescence was detected, further suggesting a defect free growth. Preliminary I-V measurements give mixed results, suggesting intrinsic n-type nanowires.

Original languageEnglish
Title of host publicationAdvances in III-V Nitride Semiconductor Materials and Devices
Pages270-275
Number of pages6
Publication statusPublished - 2006 Dec 1
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: 2006 Nov 272006 Nov 30

Publication series

NameMaterials Research Society Symposium Proceedings
Volume955
ISSN (Print)0272-9172

Other

Other2006 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period06/11/2706/11/30

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kendrick, C. E., Tilley, R., Kobayashi, M., Reeves, R. J., & Durbin, S. M. (2006). Electroluminescence from single 3D GaN nanowire grown by self-catalytic molecular beam epitaxy. In Advances in III-V Nitride Semiconductor Materials and Devices (pp. 270-275). (Materials Research Society Symposium Proceedings; Vol. 955).