Electroluminescence from single 3D GaN nanowire grown by self-catalytic molecular beam epitaxy

C. E. Kendrick, R. Tilley, Masakazu Kobayashi, R. J. Reeves, S. M. Durbin

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    3-D branching GaN nanowires have been grown using the intermediate and Ga-rich growth regimes of plasma assisted molecular beam epitaxy. Evidence that the growth is due to an auto-catalytic VLS process is obtained through SEM images showing droplet termination heads, the composition of which is essentially pure Ga. TEM analysis revealed a defect free crystal structure, even in the trunk to branch junction. Cathodoluminescence from the trunk of the branching nanowires produced a strong luminescence feature at 3.44 eV, while a slight decrease in energy to 3.1 eV was observed at the interface between the nanowire and epilayer or kink site. No yellow luminescence was detected, further suggesting a defect free growth. Preliminary I-V measurements give mixed results, suggesting intrinsic n-type nanowires.

    Original languageEnglish
    Title of host publicationMaterials Research Society Symposium Proceedings
    Pages270-275
    Number of pages6
    Volume955
    Publication statusPublished - 2006
    Event2006 MRS Fall Meeting - Boston, MA
    Duration: 2006 Nov 272006 Dec 1

    Other

    Other2006 MRS Fall Meeting
    CityBoston, MA
    Period06/11/2706/12/1

    Fingerprint

    Electroluminescence
    Molecular beam epitaxy
    Nanowires
    Luminescence
    Defects
    Cathodoluminescence
    Epilayers
    Crystal structure
    Transmission electron microscopy
    Plasmas
    Scanning electron microscopy
    Chemical analysis

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials

    Cite this

    Kendrick, C. E., Tilley, R., Kobayashi, M., Reeves, R. J., & Durbin, S. M. (2006). Electroluminescence from single 3D GaN nanowire grown by self-catalytic molecular beam epitaxy. In Materials Research Society Symposium Proceedings (Vol. 955, pp. 270-275)

    Electroluminescence from single 3D GaN nanowire grown by self-catalytic molecular beam epitaxy. / Kendrick, C. E.; Tilley, R.; Kobayashi, Masakazu; Reeves, R. J.; Durbin, S. M.

    Materials Research Society Symposium Proceedings. Vol. 955 2006. p. 270-275.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Kendrick, CE, Tilley, R, Kobayashi, M, Reeves, RJ & Durbin, SM 2006, Electroluminescence from single 3D GaN nanowire grown by self-catalytic molecular beam epitaxy. in Materials Research Society Symposium Proceedings. vol. 955, pp. 270-275, 2006 MRS Fall Meeting, Boston, MA, 06/11/27.
    Kendrick CE, Tilley R, Kobayashi M, Reeves RJ, Durbin SM. Electroluminescence from single 3D GaN nanowire grown by self-catalytic molecular beam epitaxy. In Materials Research Society Symposium Proceedings. Vol. 955. 2006. p. 270-275
    Kendrick, C. E. ; Tilley, R. ; Kobayashi, Masakazu ; Reeves, R. J. ; Durbin, S. M. / Electroluminescence from single 3D GaN nanowire grown by self-catalytic molecular beam epitaxy. Materials Research Society Symposium Proceedings. Vol. 955 2006. pp. 270-275
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    AU - Kendrick, C. E.

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    AU - Kobayashi, Masakazu

    AU - Reeves, R. J.

    AU - Durbin, S. M.

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