Electroluminescence in silicon oxynitride

Hiromitsu Kato, Akira Masuzawa, Hidefumi Sato, Yoshimichi Ohki, Makoto Fujimaki, Kwang Soo Seol, Takashi Noma

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    The mechanism of electroluminescence (EL) in silicon oxynitride (SiOxNy) was investigated. The samples tested were SiOxNy films grown by plasma enhanced chemical vapor deposition. The EL can be observed only in the sample with a high nitrogen content and thermally annealed at a high temperature. The EL peak energy decreases from 2.1 eV to 1.7 eV as the nitrogen content increases. It is already known from photoluminescence study that the present samples have at least partially a mixture structure of Si3N4 and SiO2 which are respectively responsible for the two photoluminescence bands at 2.6-2.9 and 2.7 eV in the samples. The conduction in the electric field region where the EL is observable is considered to be governed by the Poole-Frenkel process. From these results, it is concluded that the EL is caused by radiative recombination of electrons and holes in the Si3N4 region.

    Original languageEnglish
    Title of host publicationProceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials
    Place of PublicationPiscataway, NJ, United States
    PublisherIEEE
    Pages402-406
    Number of pages5
    Volume1
    Publication statusPublished - 2000
    Event6th Interantional Conference on Properties and Applications of Dielectric Materials - Xi'an, China
    Duration: 2000 Jun 212000 Jun 26

    Other

    Other6th Interantional Conference on Properties and Applications of Dielectric Materials
    CityXi'an, China
    Period00/6/2100/6/26

    Fingerprint

    Electroluminescence
    Silicon
    Photoluminescence
    Nitrogen
    Plasma enhanced chemical vapor deposition
    Electric fields
    Electrons
    Temperature
    silicon nitride

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials

    Cite this

    Kato, H., Masuzawa, A., Sato, H., Ohki, Y., Fujimaki, M., Seol, K. S., & Noma, T. (2000). Electroluminescence in silicon oxynitride. In Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials (Vol. 1, pp. 402-406). Piscataway, NJ, United States: IEEE.

    Electroluminescence in silicon oxynitride. / Kato, Hiromitsu; Masuzawa, Akira; Sato, Hidefumi; Ohki, Yoshimichi; Fujimaki, Makoto; Seol, Kwang Soo; Noma, Takashi.

    Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials. Vol. 1 Piscataway, NJ, United States : IEEE, 2000. p. 402-406.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Kato, H, Masuzawa, A, Sato, H, Ohki, Y, Fujimaki, M, Seol, KS & Noma, T 2000, Electroluminescence in silicon oxynitride. in Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials. vol. 1, IEEE, Piscataway, NJ, United States, pp. 402-406, 6th Interantional Conference on Properties and Applications of Dielectric Materials, Xi'an, China, 00/6/21.
    Kato H, Masuzawa A, Sato H, Ohki Y, Fujimaki M, Seol KS et al. Electroluminescence in silicon oxynitride. In Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials. Vol. 1. Piscataway, NJ, United States: IEEE. 2000. p. 402-406
    Kato, Hiromitsu ; Masuzawa, Akira ; Sato, Hidefumi ; Ohki, Yoshimichi ; Fujimaki, Makoto ; Seol, Kwang Soo ; Noma, Takashi. / Electroluminescence in silicon oxynitride. Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials. Vol. 1 Piscataway, NJ, United States : IEEE, 2000. pp. 402-406
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    abstract = "The mechanism of electroluminescence (EL) in silicon oxynitride (SiOxNy) was investigated. The samples tested were SiOxNy films grown by plasma enhanced chemical vapor deposition. The EL can be observed only in the sample with a high nitrogen content and thermally annealed at a high temperature. The EL peak energy decreases from 2.1 eV to 1.7 eV as the nitrogen content increases. It is already known from photoluminescence study that the present samples have at least partially a mixture structure of Si3N4 and SiO2 which are respectively responsible for the two photoluminescence bands at 2.6-2.9 and 2.7 eV in the samples. The conduction in the electric field region where the EL is observable is considered to be governed by the Poole-Frenkel process. From these results, it is concluded that the EL is caused by radiative recombination of electrons and holes in the Si3N4 region.",
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    AU - Kato, Hiromitsu

    AU - Masuzawa, Akira

    AU - Sato, Hidefumi

    AU - Ohki, Yoshimichi

    AU - Fujimaki, Makoto

    AU - Seol, Kwang Soo

    AU - Noma, Takashi

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    N2 - The mechanism of electroluminescence (EL) in silicon oxynitride (SiOxNy) was investigated. The samples tested were SiOxNy films grown by plasma enhanced chemical vapor deposition. The EL can be observed only in the sample with a high nitrogen content and thermally annealed at a high temperature. The EL peak energy decreases from 2.1 eV to 1.7 eV as the nitrogen content increases. It is already known from photoluminescence study that the present samples have at least partially a mixture structure of Si3N4 and SiO2 which are respectively responsible for the two photoluminescence bands at 2.6-2.9 and 2.7 eV in the samples. The conduction in the electric field region where the EL is observable is considered to be governed by the Poole-Frenkel process. From these results, it is concluded that the EL is caused by radiative recombination of electrons and holes in the Si3N4 region.

    AB - The mechanism of electroluminescence (EL) in silicon oxynitride (SiOxNy) was investigated. The samples tested were SiOxNy films grown by plasma enhanced chemical vapor deposition. The EL can be observed only in the sample with a high nitrogen content and thermally annealed at a high temperature. The EL peak energy decreases from 2.1 eV to 1.7 eV as the nitrogen content increases. It is already known from photoluminescence study that the present samples have at least partially a mixture structure of Si3N4 and SiO2 which are respectively responsible for the two photoluminescence bands at 2.6-2.9 and 2.7 eV in the samples. The conduction in the electric field region where the EL is observable is considered to be governed by the Poole-Frenkel process. From these results, it is concluded that the EL is caused by radiative recombination of electrons and holes in the Si3N4 region.

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