Electroluminescence of Er:O-doped nano pn diode in silicon-on-insulator and its current-voltage characteristics at room temperature

Takafumi Fujimoto, Keinan Gi, Stefano Bigoni, Michele Celebrano, Marco Finazzi, Giorgio Ferrari, Takahiro Shinada, Enrico Prati, Takashi Tanii

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Electroluminescence from erbium-doped nanoscale pn diodes was achieved. Decreasing the number of erbium ions in scaling light-emitting silicon devices decreases the emission intensity. This trend opens new possibility of single-photon emission-key function of quantum communication. Furthermore, doping by ion implantation takes advantage of controlling the number and position of erbium ions in the device. According to this trend, we fabricated pn-diodes with dimensions of telecom wavelength and observed the electroluminescence from the erbium doped region at the forward bias of 1.2 V. We discuss the photoemissivity and the current-voltage characteristics of the device, toward the single-photon emission.

Original languageEnglish
Title of host publication2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages123-124
Number of pages2
ISBN (Electronic)9781728197357
DOIs
Publication statusPublished - 2020 Jun
Event2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020 - Honolulu, United States
Duration: 2020 Jun 132020 Jun 14

Publication series

Name2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020

Conference

Conference2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020
CountryUnited States
CityHonolulu
Period20/6/1320/6/14

Keywords

  • electroluminescence
  • erbium
  • nanoscale pn diode

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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