TY - GEN
T1 - Electroluminescence of Er:O-doped nano pn diode in silicon-on-insulator and its current-voltage characteristics at room temperature
AU - Fujimoto, Takafumi
AU - Gi, Keinan
AU - Bigoni, Stefano
AU - Celebrano, Michele
AU - Finazzi, Marco
AU - Ferrari, Giorgio
AU - Shinada, Takahiro
AU - Prati, Enrico
AU - Tanii, Takashi
N1 - Funding Information:
ACKNOWLEDGMENTS This work was supported by JSPS KAKENHI (18H03766, 17H0251), and partly by the Waseda University Grant for Special Research Projects (2018K-214) and QUASIX Grant from Italian Space Agency.
Publisher Copyright:
© 2020 IEEE.
PY - 2020/6
Y1 - 2020/6
N2 - Electroluminescence from erbium-doped nanoscale pn diodes was achieved. Decreasing the number of erbium ions in scaling light-emitting silicon devices decreases the emission intensity. This trend opens new possibility of single-photon emission-key function of quantum communication. Furthermore, doping by ion implantation takes advantage of controlling the number and position of erbium ions in the device. According to this trend, we fabricated pn-diodes with dimensions of telecom wavelength and observed the electroluminescence from the erbium doped region at the forward bias of 1.2 V. We discuss the photoemissivity and the current-voltage characteristics of the device, toward the single-photon emission.
AB - Electroluminescence from erbium-doped nanoscale pn diodes was achieved. Decreasing the number of erbium ions in scaling light-emitting silicon devices decreases the emission intensity. This trend opens new possibility of single-photon emission-key function of quantum communication. Furthermore, doping by ion implantation takes advantage of controlling the number and position of erbium ions in the device. According to this trend, we fabricated pn-diodes with dimensions of telecom wavelength and observed the electroluminescence from the erbium doped region at the forward bias of 1.2 V. We discuss the photoemissivity and the current-voltage characteristics of the device, toward the single-photon emission.
KW - electroluminescence
KW - erbium
KW - nanoscale pn diode
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U2 - 10.1109/SNW50361.2020.9131655
DO - 10.1109/SNW50361.2020.9131655
M3 - Conference contribution
AN - SCOPUS:85092174339
T3 - 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020
SP - 123
EP - 124
BT - 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020
Y2 - 13 June 2020 through 14 June 2020
ER -