Electromechanical coupling and gigahertz elastic properties of ScAlN films near phase boundary

Takahiko Yanagitani, Masashi Suzuki

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

The electromechanical coupling, elastic properties, and temperature coefficient of elastic constant c 33 D of ScxAl(1-x)N films with high Sc concentration (x) of 0-0.70 were experimentally investigated. Near the phase boundary, a Sc0.41Al0.59N film exhibited a maximum thickness extensional mode electromechanical coupling coefficient kt 2 of 12% (kt = 0.35), which is almost double the value of 6.4% for typical pure AlN films. In the region of 0 < x < 0.2, the electromechanical coupling was confirmed to increase without any detectable deterioration in the temperature stability of c 33 D (=-54.5 ppm/ °C). This region is favorable in terms of temperature stability and is suitable for wideband resonator filter applications.

Original languageEnglish
Article number122907
JournalApplied Physics Letters
Volume105
Issue number12
DOIs
Publication statusPublished - 2014 Sep 22
Externally publishedYes

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elastic properties
coupling coefficients
deterioration
temperature
resonators
broadband
filters
coefficients

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Electromechanical coupling and gigahertz elastic properties of ScAlN films near phase boundary. / Yanagitani, Takahiko; Suzuki, Masashi.

In: Applied Physics Letters, Vol. 105, No. 12, 122907, 22.09.2014.

Research output: Contribution to journalArticle

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