Electromechanical coupling and gigahertz elastic properties of ScAlN films near phase boundary

Takahiko Yanagitani; Masashi Suzuki

doi:10.1063/1.4896262

Electromechanical coupling and gigahertz elastic properties of ScAlN films near phase boundary

Takahiko Yanagitani^*, Masashi Suzuki

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

91 Citations (Scopus)

Abstract

The electromechanical coupling, elastic properties, and temperature coefficient of elastic constant c 33 D of Sc_xAl_(1-x)N films with high Sc concentration (x) of 0-0.70 were experimentally investigated. Near the phase boundary, a Sc_0.41Al_0.59N film exhibited a maximum thickness extensional mode electromechanical coupling coefficient k_t² of 12% (k_t = 0.35), which is almost double the value of 6.4% for typical pure AlN films. In the region of 0 < x < 0.2, the electromechanical coupling was confirmed to increase without any detectable deterioration in the temperature stability of c 33 D (=-54.5 ppm/ °C). This region is favorable in terms of temperature stability and is suitable for wideband resonator filter applications.

Original language	English
Article number	122907
Journal	Applied Physics Letters
Volume	105
Issue number	12
DOIs	https://doi.org/10.1063/1.4896262
Publication status	Published - 2014 Sept 22
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "The electromechanical coupling, elastic properties, and temperature coefficient of elastic constant c 33 D of ScxAl(1-x)N films with high Sc concentration (x) of 0-0.70 were experimentally investigated. Near the phase boundary, a Sc0.41Al0.59N film exhibited a maximum thickness extensional mode electromechanical coupling coefficient kt2 of 12% (kt = 0.35), which is almost double the value of 6.4% for typical pure AlN films. In the region of 0 < x < 0.2, the electromechanical coupling was confirmed to increase without any detectable deterioration in the temperature stability of c 33 D (=-54.5 ppm/ °C). This region is favorable in terms of temperature stability and is suitable for wideband resonator filter applications.",

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AU - Yanagitani, Takahiko

AU - Suzuki, Masashi

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N2 - The electromechanical coupling, elastic properties, and temperature coefficient of elastic constant c 33 D of ScxAl(1-x)N films with high Sc concentration (x) of 0-0.70 were experimentally investigated. Near the phase boundary, a Sc0.41Al0.59N film exhibited a maximum thickness extensional mode electromechanical coupling coefficient kt2 of 12% (kt = 0.35), which is almost double the value of 6.4% for typical pure AlN films. In the region of 0 < x < 0.2, the electromechanical coupling was confirmed to increase without any detectable deterioration in the temperature stability of c 33 D (=-54.5 ppm/ °C). This region is favorable in terms of temperature stability and is suitable for wideband resonator filter applications.

AB - The electromechanical coupling, elastic properties, and temperature coefficient of elastic constant c 33 D of ScxAl(1-x)N films with high Sc concentration (x) of 0-0.70 were experimentally investigated. Near the phase boundary, a Sc0.41Al0.59N film exhibited a maximum thickness extensional mode electromechanical coupling coefficient kt2 of 12% (kt = 0.35), which is almost double the value of 6.4% for typical pure AlN films. In the region of 0 < x < 0.2, the electromechanical coupling was confirmed to increase without any detectable deterioration in the temperature stability of c 33 D (=-54.5 ppm/ °C). This region is favorable in terms of temperature stability and is suitable for wideband resonator filter applications.

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Electromechanical coupling and gigahertz elastic properties of ScAlN films near phase boundary

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