Electromigration of metallic islands on the Si(001) surface

T. Ichinokawa, H. Izumi, C. Haginoya, H. Itoh

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Abstract

The electromigration of metallic islands formed by vapor deposition on a Si(001)2×1 surface has been investigated with an ultrahigh-vacuum scanning electron microscope by heating the Si substrate at temperatures higher than the melting points of the islands while passing a direct current through the Si substrate. The direction of the island migration depends on the type of metal. The speed is approximately proportional to the island radius and decreases exponentially with inverse temperature. The activation energy for the migration of Au islands is 0.75 eV. The driving force of the island migration is discussed.

Original languageEnglish
Pages (from-to)9654-9657
Number of pages4
JournalPhysical Review B
Volume47
Issue number15
DOIs
Publication statusPublished - 1993 Jan 1

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ASJC Scopus subject areas

  • Condensed Matter Physics

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