Electromigration of metallic islands on the Si(001) surface

T. Ichinokawa, Izumi Hirasawa, C. Haginoya, H. Itoh

    Research output: Contribution to journalArticle

    26 Citations (Scopus)

    Abstract

    The electromigration of metallic islands formed by vapor deposition on a Si(001)2×1 surface has been investigated with an ultrahigh-vacuum scanning electron microscope by heating the Si substrate at temperatures higher than the melting points of the islands while passing a direct current through the Si substrate. The direction of the island migration depends on the type of metal. The speed is approximately proportional to the island radius and decreases exponentially with inverse temperature. The activation energy for the migration of Au islands is 0.75 eV. The driving force of the island migration is discussed.

    Original languageEnglish
    Pages (from-to)9654-9657
    Number of pages4
    JournalPhysical Review B
    Volume47
    Issue number15
    DOIs
    Publication statusPublished - 1993

    Fingerprint

    Electromigration
    electromigration
    Vapor deposition
    Ultrahigh vacuum
    Substrates
    Melting point
    Electron microscopes
    Activation energy
    Metals
    Scanning
    Heating
    Temperature
    ultrahigh vacuum
    melting points
    electron microscopes
    direct current
    vapor deposition
    activation energy
    heating
    radii

    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

    Electromigration of metallic islands on the Si(001) surface. / Ichinokawa, T.; Hirasawa, Izumi; Haginoya, C.; Itoh, H.

    In: Physical Review B, Vol. 47, No. 15, 1993, p. 9654-9657.

    Research output: Contribution to journalArticle

    Ichinokawa, T. ; Hirasawa, Izumi ; Haginoya, C. ; Itoh, H. / Electromigration of metallic islands on the Si(001) surface. In: Physical Review B. 1993 ; Vol. 47, No. 15. pp. 9654-9657.
    @article{0f33e3014bc542e3a3b54e5e0d460d37,
    title = "Electromigration of metallic islands on the Si(001) surface",
    abstract = "The electromigration of metallic islands formed by vapor deposition on a Si(001)2×1 surface has been investigated with an ultrahigh-vacuum scanning electron microscope by heating the Si substrate at temperatures higher than the melting points of the islands while passing a direct current through the Si substrate. The direction of the island migration depends on the type of metal. The speed is approximately proportional to the island radius and decreases exponentially with inverse temperature. The activation energy for the migration of Au islands is 0.75 eV. The driving force of the island migration is discussed.",
    author = "T. Ichinokawa and Izumi Hirasawa and C. Haginoya and H. Itoh",
    year = "1993",
    doi = "10.1103/PhysRevB.47.9654",
    language = "English",
    volume = "47",
    pages = "9654--9657",
    journal = "Physical Review B-Condensed Matter",
    issn = "0163-1829",
    publisher = "American Institute of Physics Publising LLC",
    number = "15",

    }

    TY - JOUR

    T1 - Electromigration of metallic islands on the Si(001) surface

    AU - Ichinokawa, T.

    AU - Hirasawa, Izumi

    AU - Haginoya, C.

    AU - Itoh, H.

    PY - 1993

    Y1 - 1993

    N2 - The electromigration of metallic islands formed by vapor deposition on a Si(001)2×1 surface has been investigated with an ultrahigh-vacuum scanning electron microscope by heating the Si substrate at temperatures higher than the melting points of the islands while passing a direct current through the Si substrate. The direction of the island migration depends on the type of metal. The speed is approximately proportional to the island radius and decreases exponentially with inverse temperature. The activation energy for the migration of Au islands is 0.75 eV. The driving force of the island migration is discussed.

    AB - The electromigration of metallic islands formed by vapor deposition on a Si(001)2×1 surface has been investigated with an ultrahigh-vacuum scanning electron microscope by heating the Si substrate at temperatures higher than the melting points of the islands while passing a direct current through the Si substrate. The direction of the island migration depends on the type of metal. The speed is approximately proportional to the island radius and decreases exponentially with inverse temperature. The activation energy for the migration of Au islands is 0.75 eV. The driving force of the island migration is discussed.

    UR - http://www.scopus.com/inward/record.url?scp=0010001077&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0010001077&partnerID=8YFLogxK

    U2 - 10.1103/PhysRevB.47.9654

    DO - 10.1103/PhysRevB.47.9654

    M3 - Article

    AN - SCOPUS:0010001077

    VL - 47

    SP - 9654

    EP - 9657

    JO - Physical Review B-Condensed Matter

    JF - Physical Review B-Condensed Matter

    SN - 0163-1829

    IS - 15

    ER -