Electron beam induced degradation of 2DEG in AlGaAs/GaAs heterostructure

T. Wada, T. Kanayama, Shingo Ichimura, Y. Sugiyama, M. Komuro

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effects of low-energy electron irradiation on the two-dimensional electron gases (2DEG's) in AlGaAs/GaAs heterostructures have been investigated. Not only the electron mobility of the 2DEG's but also the two-dimensional (2D) carriers are found to be reduced by the electron irradiation with the incident energies between 3.5 k and 8 keV and the electron dose of 1×1016 and 1×1017/cm2. The degraded mobility and the removed carriers by the low-energy electron irradiation are shown to recover by isochronal annealing to some extent, but not completely below 400 °C. It is also found that considerable amount of scatterers which are created by an electron irradiation at room temperature are also created by an irradiation at 90 K. Comparing the experimental results with the Monte Carlo simulation, we speculate that the mobility degradation and the 2D carrier compensation are partly caused by the formation of complex defects in the GaAs buffer layer which are due to the excitations of core electrons of As, and that the mobility is further degraded by the formation of short-range scatterers in the heterointerface.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
PublisherPubl by Materials Research Society
Pages67-72
Number of pages6
Volume325
ISBN (Print)1558992243
Publication statusPublished - 1994 Jan 1
Externally publishedYes
EventProceedings of the Symposium on Defects in Advanced Semiconductors: Physics and Applications - Boston, MA, USA
Duration: 1993 Nov 291993 Dec 1

Other

OtherProceedings of the Symposium on Defects in Advanced Semiconductors: Physics and Applications
CityBoston, MA, USA
Period93/11/2993/12/1

Fingerprint

Two dimensional electron gas
Electron irradiation
electron irradiation
aluminum gallium arsenides
Heterojunctions
Electron beams
electron beams
degradation
Degradation
Electrons
Electron mobility
Buffer layers
scattering
electron mobility
electron gas
energy
electrons
buffers
Irradiation
Annealing

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Wada, T., Kanayama, T., Ichimura, S., Sugiyama, Y., & Komuro, M. (1994). Electron beam induced degradation of 2DEG in AlGaAs/GaAs heterostructure. In Materials Research Society Symposium Proceedings (Vol. 325, pp. 67-72). Publ by Materials Research Society.

Electron beam induced degradation of 2DEG in AlGaAs/GaAs heterostructure. / Wada, T.; Kanayama, T.; Ichimura, Shingo; Sugiyama, Y.; Komuro, M.

Materials Research Society Symposium Proceedings. Vol. 325 Publ by Materials Research Society, 1994. p. 67-72.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wada, T, Kanayama, T, Ichimura, S, Sugiyama, Y & Komuro, M 1994, Electron beam induced degradation of 2DEG in AlGaAs/GaAs heterostructure. in Materials Research Society Symposium Proceedings. vol. 325, Publ by Materials Research Society, pp. 67-72, Proceedings of the Symposium on Defects in Advanced Semiconductors: Physics and Applications, Boston, MA, USA, 93/11/29.
Wada T, Kanayama T, Ichimura S, Sugiyama Y, Komuro M. Electron beam induced degradation of 2DEG in AlGaAs/GaAs heterostructure. In Materials Research Society Symposium Proceedings. Vol. 325. Publ by Materials Research Society. 1994. p. 67-72
Wada, T. ; Kanayama, T. ; Ichimura, Shingo ; Sugiyama, Y. ; Komuro, M. / Electron beam induced degradation of 2DEG in AlGaAs/GaAs heterostructure. Materials Research Society Symposium Proceedings. Vol. 325 Publ by Materials Research Society, 1994. pp. 67-72
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