Electron beam lithography on organosilane self-assembled monolayer resist

Takashi Tanii, Takumi Hosaka, Takeo Miyake, Iwao Ohdomari

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

We report a result of a feasibility study on the application of an octadecyltrimethoxysilane self-assembled monolayer to a resist film for electron beam lithography. The self-assembled monolayer deposited on a silicon dioxide surface by chemical vapor deposition is resistant to both sulfuric acid and hydrofluoric acid. By immersing the electron-beam-irradiated surface into both acids, we successfully develop microstructural patterns in the self-assembled monolayer. In particular, we show the effectiveness of immersing the substrate into a sulfuric-acid-based solution for the development of the pattern. The relationship between the required dose and the developing time is estimated by measuring the morphology of the developed patterns by atomic force microscopy. The pattern in the self-assembled monolayer can be transferred into both the underlying silicon dioxide layer and the silicon substrate. These results indicate that the organosilane self-assembled monolayer serves as an alternative resist for electron beam lithography.

Original languageEnglish
Pages (from-to)4396-4397
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number7 A
DOIs
Publication statusPublished - 2004 Jul

Fingerprint

Electron beam lithography
Self assembled monolayers
lithography
electron beams
sulfuric acid
Sulfuric acid
silicon dioxide
acids
Silica
hydrofluoric acid
Hydrofluoric acid
Substrates
vapor deposition
atomic force microscopy
Chemical vapor deposition
Electron beams
Atomic force microscopy
dosage
silicon
Silicon

Keywords

  • Electron beam
  • Lithography
  • Octadecyltrimethoxysilane
  • ODS
  • Organosilane
  • SAM
  • Self-assembled monolayer

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Electron beam lithography on organosilane self-assembled monolayer resist. / Tanii, Takashi; Hosaka, Takumi; Miyake, Takeo; Ohdomari, Iwao.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 7 A, 07.2004, p. 4396-4397.

Research output: Contribution to journalArticle

@article{1a4445324477427f944d4f4dee41d3d0,
title = "Electron beam lithography on organosilane self-assembled monolayer resist",
abstract = "We report a result of a feasibility study on the application of an octadecyltrimethoxysilane self-assembled monolayer to a resist film for electron beam lithography. The self-assembled monolayer deposited on a silicon dioxide surface by chemical vapor deposition is resistant to both sulfuric acid and hydrofluoric acid. By immersing the electron-beam-irradiated surface into both acids, we successfully develop microstructural patterns in the self-assembled monolayer. In particular, we show the effectiveness of immersing the substrate into a sulfuric-acid-based solution for the development of the pattern. The relationship between the required dose and the developing time is estimated by measuring the morphology of the developed patterns by atomic force microscopy. The pattern in the self-assembled monolayer can be transferred into both the underlying silicon dioxide layer and the silicon substrate. These results indicate that the organosilane self-assembled monolayer serves as an alternative resist for electron beam lithography.",
keywords = "Electron beam, Lithography, Octadecyltrimethoxysilane, ODS, Organosilane, SAM, Self-assembled monolayer",
author = "Takashi Tanii and Takumi Hosaka and Takeo Miyake and Iwao Ohdomari",
year = "2004",
month = "7",
doi = "10.1143/JJAP.43.4396",
language = "English",
volume = "43",
pages = "4396--4397",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "7 A",

}

TY - JOUR

T1 - Electron beam lithography on organosilane self-assembled monolayer resist

AU - Tanii, Takashi

AU - Hosaka, Takumi

AU - Miyake, Takeo

AU - Ohdomari, Iwao

PY - 2004/7

Y1 - 2004/7

N2 - We report a result of a feasibility study on the application of an octadecyltrimethoxysilane self-assembled monolayer to a resist film for electron beam lithography. The self-assembled monolayer deposited on a silicon dioxide surface by chemical vapor deposition is resistant to both sulfuric acid and hydrofluoric acid. By immersing the electron-beam-irradiated surface into both acids, we successfully develop microstructural patterns in the self-assembled monolayer. In particular, we show the effectiveness of immersing the substrate into a sulfuric-acid-based solution for the development of the pattern. The relationship between the required dose and the developing time is estimated by measuring the morphology of the developed patterns by atomic force microscopy. The pattern in the self-assembled monolayer can be transferred into both the underlying silicon dioxide layer and the silicon substrate. These results indicate that the organosilane self-assembled monolayer serves as an alternative resist for electron beam lithography.

AB - We report a result of a feasibility study on the application of an octadecyltrimethoxysilane self-assembled monolayer to a resist film for electron beam lithography. The self-assembled monolayer deposited on a silicon dioxide surface by chemical vapor deposition is resistant to both sulfuric acid and hydrofluoric acid. By immersing the electron-beam-irradiated surface into both acids, we successfully develop microstructural patterns in the self-assembled monolayer. In particular, we show the effectiveness of immersing the substrate into a sulfuric-acid-based solution for the development of the pattern. The relationship between the required dose and the developing time is estimated by measuring the morphology of the developed patterns by atomic force microscopy. The pattern in the self-assembled monolayer can be transferred into both the underlying silicon dioxide layer and the silicon substrate. These results indicate that the organosilane self-assembled monolayer serves as an alternative resist for electron beam lithography.

KW - Electron beam

KW - Lithography

KW - Octadecyltrimethoxysilane

KW - ODS

KW - Organosilane

KW - SAM

KW - Self-assembled monolayer

UR - http://www.scopus.com/inward/record.url?scp=4644225152&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4644225152&partnerID=8YFLogxK

U2 - 10.1143/JJAP.43.4396

DO - 10.1143/JJAP.43.4396

M3 - Article

AN - SCOPUS:4644225152

VL - 43

SP - 4396

EP - 4397

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 7 A

ER -