Electron conduction in an atomic-layer-doped gaas plane

Toshiki Makimoto, Naoki Kobayashi, Yoshiji Horikoshi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Electronic transport characteristics in Si atomic-layer-doped GaAs are investigated using Hall measurements. In the uniformly Si-doped GaAs crystals, the carrier concentration varies very little throughout the whole temperature range, while the atomic-layer-doped GaAs layer exhibits a strong temperature-dependent electron concentration with a minimum value around 100 K. The temperature dependence of the sheet resistance of the Si atomic-layer-doped GaAs is quite different from that of the uniformly Si-doped GaAs. The observed characteristics are interpreted by considering parallel conduction in the Si atomic-layer-doped GaAs. We propose a hypothetical model that the electrons are confined by a local potential well structure due to the random distribution of Si atoms in the atomic-layer-doped plane. Using this model, we also discuss the discrepancy reported so far between the doped layer thickness evaluated from magnetoresistance measurements and that from C-V profiling measurements.

Original languageEnglish
Pages (from-to)L770-L772
JournalJapanese journal of applied physics
Volume27
Issue number5A
DOIs
Publication statusPublished - 1988 May
Externally publishedYes

Keywords

  • Atomic-layer-doping
  • Flow-rate modulation epitaxy
  • Hall measurements
  • Resistivity

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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