ELECTRON CONDUCTION IN AN ATOMIC-LAYER-DOPED GaAs PLANE.

Toshiki Makimoto, Naoki Kobayashi, Yoshiji Horikoshi

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

Electronic transport characteristics in Si atomic-layer-doped GaAs are investigated using Hall measurements. In the uniformly Si-doped GaAs crystals, the carrier concentration varies very little throughout the whole temperature range, while the atomic-layer-doped GaAs layer exhibits a strong temperature-dependent electron concentration with a minimum value around 100 K. The temperature dependence of the sheet resistance of the Si atomic-layer-doped GaAs is quite different from that of the uniformly Si-doped GaAs. The observed characteristics are interpreted by considering parallel conduction in the Si atomic-layer-doped GaAs. We propose a hypothetical model that the electrons are confined by a local potential well structure due to the random distribution of Si atoms in the atomic-layer-doped plane. Using this model, we also discuss the discrepancy reported so far between the doped layer thickness evaluated from magnetoresistance measurements and that from C-V profiling measurements.

Original languageEnglish
Title of host publicationJapanese Journal of Applied Physics, Part 2: Letters
Pages770-772
Number of pages3
Volume27
Edition5
Publication statusPublished - 1988 May
Externally publishedYes

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Electrons
Sheet resistance
Magnetoresistance
Temperature
Carrier concentration
Atoms
Crystals

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Makimoto, T., Kobayashi, N., & Horikoshi, Y. (1988). ELECTRON CONDUCTION IN AN ATOMIC-LAYER-DOPED GaAs PLANE. In Japanese Journal of Applied Physics, Part 2: Letters (5 ed., Vol. 27, pp. 770-772)

ELECTRON CONDUCTION IN AN ATOMIC-LAYER-DOPED GaAs PLANE. / Makimoto, Toshiki; Kobayashi, Naoki; Horikoshi, Yoshiji.

Japanese Journal of Applied Physics, Part 2: Letters. Vol. 27 5. ed. 1988. p. 770-772.

Research output: Chapter in Book/Report/Conference proceedingChapter

Makimoto, T, Kobayashi, N & Horikoshi, Y 1988, ELECTRON CONDUCTION IN AN ATOMIC-LAYER-DOPED GaAs PLANE. in Japanese Journal of Applied Physics, Part 2: Letters. 5 edn, vol. 27, pp. 770-772.
Makimoto T, Kobayashi N, Horikoshi Y. ELECTRON CONDUCTION IN AN ATOMIC-LAYER-DOPED GaAs PLANE. In Japanese Journal of Applied Physics, Part 2: Letters. 5 ed. Vol. 27. 1988. p. 770-772
Makimoto, Toshiki ; Kobayashi, Naoki ; Horikoshi, Yoshiji. / ELECTRON CONDUCTION IN AN ATOMIC-LAYER-DOPED GaAs PLANE. Japanese Journal of Applied Physics, Part 2: Letters. Vol. 27 5. ed. 1988. pp. 770-772
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