This paper describes electronic transport characteristics of Si atomic-layer-doped GaAs grown by flowrate modulation epitaxy. This enables achievement of extremely heavy Si doping within one atomic layer without interupting growth. Electron concentrations are evaluated using Hall measurements and the phenomenon of electron concentration dependence on temperature and undoped GaAs layer thickness is explained by considering parallel conduction of electrons distributed in different levels with different mobilities.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)