Electron conduction in GaAs atomic layer doped with Si

Toshiki Makimoto, Naoki Kobayashi, Yoshiji Horikoshi

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

This paper describes electronic transport characteristics of Si atomic-layer-doped GaAs grown by flowrate modulation epitaxy. This enables achievement of extremely heavy Si doping within one atomic layer without interupting growth. Electron concentrations are evaluated using Hall measurements and the phenomenon of electron concentration dependence on temperature and undoped GaAs layer thickness is explained by considering parallel conduction of electrons distributed in different levels with different mobilities.

Original languageEnglish
Pages (from-to)5023-5026
Number of pages4
JournalJournal of Applied Physics
Volume63
Issue number10
DOIs
Publication statusPublished - 1988
Externally publishedYes

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conduction electrons
electrons
epitaxy
modulation
conduction
electronics
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Electron conduction in GaAs atomic layer doped with Si. / Makimoto, Toshiki; Kobayashi, Naoki; Horikoshi, Yoshiji.

In: Journal of Applied Physics, Vol. 63, No. 10, 1988, p. 5023-5026.

Research output: Contribution to journalArticle

Makimoto, Toshiki ; Kobayashi, Naoki ; Horikoshi, Yoshiji. / Electron conduction in GaAs atomic layer doped with Si. In: Journal of Applied Physics. 1988 ; Vol. 63, No. 10. pp. 5023-5026.
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