Electron density dependence of the electronic structure of InN epitaxial layers grown on sapphire (0001)

T. Inushima, M. Higashiwaki, T. Matsui, T. Takenobu, M. Motokawa

Research output: Contribution to journalArticle

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Abstract

The temperature dependence of the resistivity of InN was investigated as a function of carrier density. The carrier density was changed from ne =1.8× 1018 cm-3 to 1.5× 1019 cm-3 by Si doping. The InN investigated showed metallic conduction above 20 K. At lower temperatures there was a resistivity anomaly originating from carrier localization in the a-b plane, which was confirmed by the magnetoresistance at 0.5 K. The Shubnikov-de Haas oscillation showed that InN had a spherical Fermi surface and its radius increased according to the increase of ne when ne <5× 1018 cm-3. In addition, an oscillation corresponding to the constant carrier density of 4.5× 1012 cm-2 was observed in the field applied perpendicular to the a-b plane. This oscillation showed an anomalous angle dependence on the magnetic field. Taking into account this density, we determined the critical carrier density of the Mott transition to be 2× 1017 cm-3. Anisotropy of localization was observed within the a-b plane, which indicates that the distribution of the electrons was not uniform in the a-b plane. The ne dependence of the magnetoresistance revealed an electronic structure change around 5× 1018 cm-3. From these results, an electronic structure at the fundamental absorption edge of InN grown on sapphire (0001) was presented.

Original languageEnglish
Article number085210
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume72
Issue number8
DOIs
Publication statusPublished - 2005 Aug 15
Externally publishedYes

Fingerprint

Aluminum Oxide
Epitaxial layers
Sapphire
Electronic structure
Carrier concentration
sapphire
electronic structure
Magnetoresistance
oscillations
electrical resistivity
Fermi surface
Fermi surfaces
Anisotropy
Doping (additives)
anomalies
Magnetic fields
conduction
Temperature
temperature dependence
anisotropy

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Electron density dependence of the electronic structure of InN epitaxial layers grown on sapphire (0001). / Inushima, T.; Higashiwaki, M.; Matsui, T.; Takenobu, T.; Motokawa, M.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 72, No. 8, 085210, 15.08.2005.

Research output: Contribution to journalArticle

@article{52d2e069d0e94458953a7287c92d44c0,
title = "Electron density dependence of the electronic structure of InN epitaxial layers grown on sapphire (0001)",
abstract = "The temperature dependence of the resistivity of InN was investigated as a function of carrier density. The carrier density was changed from ne =1.8× 1018 cm-3 to 1.5× 1019 cm-3 by Si doping. The InN investigated showed metallic conduction above 20 K. At lower temperatures there was a resistivity anomaly originating from carrier localization in the a-b plane, which was confirmed by the magnetoresistance at 0.5 K. The Shubnikov-de Haas oscillation showed that InN had a spherical Fermi surface and its radius increased according to the increase of ne when ne <5× 1018 cm-3. In addition, an oscillation corresponding to the constant carrier density of 4.5× 1012 cm-2 was observed in the field applied perpendicular to the a-b plane. This oscillation showed an anomalous angle dependence on the magnetic field. Taking into account this density, we determined the critical carrier density of the Mott transition to be 2× 1017 cm-3. Anisotropy of localization was observed within the a-b plane, which indicates that the distribution of the electrons was not uniform in the a-b plane. The ne dependence of the magnetoresistance revealed an electronic structure change around 5× 1018 cm-3. From these results, an electronic structure at the fundamental absorption edge of InN grown on sapphire (0001) was presented.",
author = "T. Inushima and M. Higashiwaki and T. Matsui and T. Takenobu and M. Motokawa",
year = "2005",
month = "8",
day = "15",
doi = "10.1103/PhysRevB.72.085210",
language = "English",
volume = "72",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics Publising LLC",
number = "8",

}

TY - JOUR

T1 - Electron density dependence of the electronic structure of InN epitaxial layers grown on sapphire (0001)

AU - Inushima, T.

AU - Higashiwaki, M.

AU - Matsui, T.

AU - Takenobu, T.

AU - Motokawa, M.

PY - 2005/8/15

Y1 - 2005/8/15

N2 - The temperature dependence of the resistivity of InN was investigated as a function of carrier density. The carrier density was changed from ne =1.8× 1018 cm-3 to 1.5× 1019 cm-3 by Si doping. The InN investigated showed metallic conduction above 20 K. At lower temperatures there was a resistivity anomaly originating from carrier localization in the a-b plane, which was confirmed by the magnetoresistance at 0.5 K. The Shubnikov-de Haas oscillation showed that InN had a spherical Fermi surface and its radius increased according to the increase of ne when ne <5× 1018 cm-3. In addition, an oscillation corresponding to the constant carrier density of 4.5× 1012 cm-2 was observed in the field applied perpendicular to the a-b plane. This oscillation showed an anomalous angle dependence on the magnetic field. Taking into account this density, we determined the critical carrier density of the Mott transition to be 2× 1017 cm-3. Anisotropy of localization was observed within the a-b plane, which indicates that the distribution of the electrons was not uniform in the a-b plane. The ne dependence of the magnetoresistance revealed an electronic structure change around 5× 1018 cm-3. From these results, an electronic structure at the fundamental absorption edge of InN grown on sapphire (0001) was presented.

AB - The temperature dependence of the resistivity of InN was investigated as a function of carrier density. The carrier density was changed from ne =1.8× 1018 cm-3 to 1.5× 1019 cm-3 by Si doping. The InN investigated showed metallic conduction above 20 K. At lower temperatures there was a resistivity anomaly originating from carrier localization in the a-b plane, which was confirmed by the magnetoresistance at 0.5 K. The Shubnikov-de Haas oscillation showed that InN had a spherical Fermi surface and its radius increased according to the increase of ne when ne <5× 1018 cm-3. In addition, an oscillation corresponding to the constant carrier density of 4.5× 1012 cm-2 was observed in the field applied perpendicular to the a-b plane. This oscillation showed an anomalous angle dependence on the magnetic field. Taking into account this density, we determined the critical carrier density of the Mott transition to be 2× 1017 cm-3. Anisotropy of localization was observed within the a-b plane, which indicates that the distribution of the electrons was not uniform in the a-b plane. The ne dependence of the magnetoresistance revealed an electronic structure change around 5× 1018 cm-3. From these results, an electronic structure at the fundamental absorption edge of InN grown on sapphire (0001) was presented.

UR - http://www.scopus.com/inward/record.url?scp=33644948260&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33644948260&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.72.085210

DO - 10.1103/PhysRevB.72.085210

M3 - Article

VL - 72

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 8

M1 - 085210

ER -