Electron microscope studies of InxGav1-xAs/GaAs/Si grown by metalorganic chemical vapor deposition

K. Kamei*, W. M. Stobbs, K. Fujita

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


The microstructure of InxGa1-xAs/GaAs (5 nm/5 nm, x < 0 to 1.0), as grown by a metalorganic chemical vapor deposition two-step growth technique on Si(100) at 450‡C, and subsequently annealed at 750‡C, is investigated using plan-view and cross-sectional transmission electron microscopy. The variations in resultant island morphology and strain as a function of the In content were examined through the comparison of the misfit dislocation arrays and moirés observed. The results are discussed in relation to the ways in which the island relaxation process changes for high In content.

Original languageEnglish
Pages (from-to)2025-2031
Number of pages7
JournalJournal of Electronic Materials
Issue number12
Publication statusPublished - 1995 Dec
Externally publishedYes


  • GaAs/Si heteroepitaxy
  • InGaAs
  • metalorganic chemical vapor deposition (MOCVD)
  • transmission electron microscopy (TEM)

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Electrical and Electronic Engineering


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