Electron-phonon scattering effect on strained si nanowire FETs at low temperature

I. Tsuchida, A. Seike, H. Takai, J. Masuda, D. Kosemura, A. Ogura, Takanobu Watanabe, I. Ohdomari

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Strained Si nanowire FETs of nanowire width (W) of W=155nm and W=5000nm, are evaluated by Id-Vbg characteristics at various temperatures. Transconductance (gm) and subthreshold slope are obtained from the Id-Vbg characteristics. The normalized gm (gm *) increases by a factor of 1.38 for W=155nm and 3.13 for W=5000nm. Subthreshold slope decreases 22% for W=5000nm and 42% for W=155nm. This improvement is due to suppression of electron-phonon scattering at low temperature. This also indicates that the influence of electron-phonon interaction on gm enhancement is different compared to that in bulk Si.

    Original languageEnglish
    Title of host publicationECS Transactions
    Pages439-443
    Number of pages5
    Volume25
    Edition6
    DOIs
    Publication statusPublished - 2009
    Event7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna
    Duration: 2009 Oct 52009 Oct 7

    Other

    Other7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society
    CityVienna
    Period09/10/509/10/7

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    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

    Tsuchida, I., Seike, A., Takai, H., Masuda, J., Kosemura, D., Ogura, A., Watanabe, T., & Ohdomari, I. (2009). Electron-phonon scattering effect on strained si nanowire FETs at low temperature. In ECS Transactions (6 ed., Vol. 25, pp. 439-443) https://doi.org/10.1149/1.3206643