Electron-phonon scattering effect on strained si nanowire FETs at low temperature

I. Tsuchida, A. Seike, H. Takai, J. Masuda, D. Kosemura, A. Ogura, Takanobu Watanabe, I. Ohdomari

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Strained Si nanowire FETs of nanowire width (W) of W=155nm and W=5000nm, are evaluated by Id-Vbg characteristics at various temperatures. Transconductance (gm) and subthreshold slope are obtained from the Id-Vbg characteristics. The normalized gm (gm *) increases by a factor of 1.38 for W=155nm and 3.13 for W=5000nm. Subthreshold slope decreases 22% for W=5000nm and 42% for W=155nm. This improvement is due to suppression of electron-phonon scattering at low temperature. This also indicates that the influence of electron-phonon interaction on gm enhancement is different compared to that in bulk Si.

    Original languageEnglish
    Title of host publicationECS Transactions
    Pages439-443
    Number of pages5
    Volume25
    Edition6
    DOIs
    Publication statusPublished - 2009
    Event7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna
    Duration: 2009 Oct 52009 Oct 7

    Other

    Other7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society
    CityVienna
    Period09/10/509/10/7

    Fingerprint

    Phonon scattering
    Electron scattering
    Field effect transistors
    Nanowires
    Electron-phonon interactions
    Transconductance
    Temperature

    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

    Tsuchida, I., Seike, A., Takai, H., Masuda, J., Kosemura, D., Ogura, A., ... Ohdomari, I. (2009). Electron-phonon scattering effect on strained si nanowire FETs at low temperature. In ECS Transactions (6 ed., Vol. 25, pp. 439-443) https://doi.org/10.1149/1.3206643

    Electron-phonon scattering effect on strained si nanowire FETs at low temperature. / Tsuchida, I.; Seike, A.; Takai, H.; Masuda, J.; Kosemura, D.; Ogura, A.; Watanabe, Takanobu; Ohdomari, I.

    ECS Transactions. Vol. 25 6. ed. 2009. p. 439-443.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Tsuchida, I, Seike, A, Takai, H, Masuda, J, Kosemura, D, Ogura, A, Watanabe, T & Ohdomari, I 2009, Electron-phonon scattering effect on strained si nanowire FETs at low temperature. in ECS Transactions. 6 edn, vol. 25, pp. 439-443, 7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society, Vienna, 09/10/5. https://doi.org/10.1149/1.3206643
    Tsuchida I, Seike A, Takai H, Masuda J, Kosemura D, Ogura A et al. Electron-phonon scattering effect on strained si nanowire FETs at low temperature. In ECS Transactions. 6 ed. Vol. 25. 2009. p. 439-443 https://doi.org/10.1149/1.3206643
    Tsuchida, I. ; Seike, A. ; Takai, H. ; Masuda, J. ; Kosemura, D. ; Ogura, A. ; Watanabe, Takanobu ; Ohdomari, I. / Electron-phonon scattering effect on strained si nanowire FETs at low temperature. ECS Transactions. Vol. 25 6. ed. 2009. pp. 439-443
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    AU - Seike, A.

    AU - Takai, H.

    AU - Masuda, J.

    AU - Kosemura, D.

    AU - Ogura, A.

    AU - Watanabe, Takanobu

    AU - Ohdomari, I.

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