Electron-phonon scattering effect on strained si nanowire FETs at low temperature

I. Tsuchida, A. Seike, H. Takai, J. Masuda, D. Kosemura, A. Ogura, T. Watanabe, I. Ohdomari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Strained Si nanowire FETs of nanowire width (W) of W=155nm and W=5000nm, are evaluated by Id-Vbg characteristics at various temperatures. Transconductance (gm) and subthreshold slope are obtained from the Id-Vbg characteristics. The normalized gm (gm *) increases by a factor of 1.38 for W=155nm and 3.13 for W=5000nm. Subthreshold slope decreases 22% for W=5000nm and 42% for W=155nm. This improvement is due to suppression of electron-phonon scattering at low temperature. This also indicates that the influence of electron-phonon interaction on gm enhancement is different compared to that in bulk Si.

Original languageEnglish
Title of host publicationECS Transactions - Physics and Technology of High-k Gate Dielectrics 7
Pages439-443
Number of pages5
Edition6
DOIs
Publication statusPublished - 2009 Dec 1
Event7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria
Duration: 2009 Oct 52009 Oct 7

Publication series

NameECS Transactions
Number6
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society
CountryAustria
CityVienna
Period09/10/509/10/7

ASJC Scopus subject areas

  • Engineering(all)

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    Tsuchida, I., Seike, A., Takai, H., Masuda, J., Kosemura, D., Ogura, A., Watanabe, T., & Ohdomari, I. (2009). Electron-phonon scattering effect on strained si nanowire FETs at low temperature. In ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7 (6 ed., pp. 439-443). (ECS Transactions; Vol. 25, No. 6). https://doi.org/10.1149/1.3206643