Electron-spectroscopy and -diffraction study of the conductivity of CVD diamond (0 0 1) 2 × 1 surface

S. Kono, T. Takano, M. Shimomura, T. Goto, K. Sato, T. Abukawa, M. Tachiki, H. Kawarada

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

A chemical vapor deposition as-grown diamond (001) single-domain 2×1 surface was studied by electron-spectroscopy and electron-diffraction in ultrahigh vacuum (UHV). In order to change the surface conductivity (SC) of the diamond in UHV, three annealing stages were used; without annealing, annealing at 300 °C and annealing at 550 °C. From low energy electron diffraction and X-ray photoelectron spectroscopic (XPS) studies, an existence of SC was suggested for the first two stages of annealing and an absence of SC was suggested for the last stage of annealing. Changes in C KVV Auger electron spectroscopic spectra, C KVV Auger electron diffraction (AED) patterns and C 1s XPS peak positions were noticed between the annealing stages at 300 and 550 °C. These changes are interpreted as such that the state of hydrogen involvement in a subsurface of diamond (001)2×1 changes as SC changes. In particular, the presence of local disorder in diamond configuration in SC subsurface is pointed out from C KVV AED. From C 1s XPS peak shifts, a lower bound for the Fermi-level for SC layers from the valence band top is presented to be ∼0.5 eV.

Original languageEnglish
Pages (from-to)180-188
Number of pages9
JournalSurface Science
Volume529
Issue number1-2
DOIs
Publication statusPublished - 2003 Apr 1

Keywords

  • Auger electron diffraction
  • Auger electron spectroscopy
  • Chemical vapor deposition
  • Diamond
  • Surface electrical transport (Surface conductivity, Surface recombination, etc.)
  • X-ray photoelectron spectroscopy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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