TY - JOUR
T1 - Electron spin flip in 111-V semiconductor cuantum confined structures
AU - Tackeuchi, Atsushi
N1 - Funding Information:
Kitamura, M. Murayama and T. Yabushita for their help in the experiments. This work was partially supported by a Grant-in-Aid for Scientific Research in Priority Areas "Semiconductor Nanospintronics" (No.14076217) of The Ministry of Education, Culture, Sports, Science and Technology, Japan.
Publisher Copyright:
© 2003 SPIE. All rights reserved.
PY - 2003/5/30
Y1 - 2003/5/30
N2 - We report on the fast spin flip process in quantum wells and quantum dots. The utilization of spin degree of freedom will open the door to novel functional devices. In the GaAs/A1GaAs quantum wells, the spin relaxation time is found to be about several ten picoseconds at room temperature. JnGaAs/InP quantum wells whose bandgap correspond to 1.5 micron meters have the fast spin relaxation of several picoseconds. Regarding to GaAs/AlGaAs multiple-quantum wells, we observed that Dyakonov-Perel process governs the spin relaxation at room temperature. All optical switiching devices using this fast spin relaxation process were proposed and demonstrated. In the quantum dots, we have found that antiferromagnetic coupling between quantum dots exist at temperatures lower than 50-80 K. The electron spin flips within 70-200 Ps after the carrier generation. The spin relaxation time under the antiferromagnetic order is extended to 10-12 ns, an order ofmagnitude longer than that in isolated quantum dots.
AB - We report on the fast spin flip process in quantum wells and quantum dots. The utilization of spin degree of freedom will open the door to novel functional devices. In the GaAs/A1GaAs quantum wells, the spin relaxation time is found to be about several ten picoseconds at room temperature. JnGaAs/InP quantum wells whose bandgap correspond to 1.5 micron meters have the fast spin relaxation of several picoseconds. Regarding to GaAs/AlGaAs multiple-quantum wells, we observed that Dyakonov-Perel process governs the spin relaxation at room temperature. All optical switiching devices using this fast spin relaxation process were proposed and demonstrated. In the quantum dots, we have found that antiferromagnetic coupling between quantum dots exist at temperatures lower than 50-80 K. The electron spin flips within 70-200 Ps after the carrier generation. The spin relaxation time under the antiferromagnetic order is extended to 10-12 ns, an order ofmagnitude longer than that in isolated quantum dots.
UR - http://www.scopus.com/inward/record.url?scp=85076804674&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85076804674&partnerID=8YFLogxK
U2 - 10.1117/12.475702
DO - 10.1117/12.475702
M3 - Conference article
AN - SCOPUS:85076804674
VL - 4992
SP - 25
EP - 32
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
SN - 0277-786X
T2 - Ultrafast Phenomena in Semiconductors VII 2003
Y2 - 25 January 2003 through 31 January 2003
ER -