Electron spin-relaxation dynamics in GaAs/AlGaAs quantum wells and InGaAs/InP quantum wells

Atsushi Tackeuchi; Takamasa Kuroda; Shunichi Muto; Yuji Nishikawa; Osamu Wada

doi:10.1143/jjap.38.4680

Electron spin-relaxation dynamics in GaAs/AlGaAs quantum wells and InGaAs/InP quantum wells

Atsushi Tackeuchi, Takamasa Kuroda, Shunichi Muto, Yuji Nishikawa, Osamu Wada

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

58 Citations (Scopus)

Abstract

We have investigated the spin-relaxation process of electrons at room temperature in undoped GaAs/AlGaAs multiple-quantum wells (MQWs) and InGaAs/InP MQWs. The spin-relaxation times are measured for different well thicknesses using time-resolved spin-dependent pump and probe absorption measurement. The spin-relaxation time, τ_s, for GaAs MQWs was found to depend on the electron confinement energy, E_1e, according to τ_s ∝ E_1e^-2.2, demonstrating that the main spin-relaxation mechanism at room temperature is the D'yakonov-Perel' process. The measured spin-relaxation times of InGaAs MQWs whose band-gap is about half that of GaAs MQWs arc about 5 ps and vary depending on the quantum confinement energy, E_1e, according to τ_s ∝ E_1e^-1.0. The spin-relaxation time by Elliott-Yafet process, which becomes stronger for narrower band-gap materials, is calculated for quantum wells and shown to vary according to τ_s ∝ E_1e^-1. The spin-relaxation mechanism and possible applications using this fast spin-relaxation process are discussed.

Original language	English
Pages (from-to)	4680-4687
Number of pages	8
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	38
Issue number	8 B
DOIs	https://doi.org/10.1143/jjap.38.4680
Publication status	Published - 1999 Aug 15

Keywords

D'yakonov-Perel'
Electron
Elliott-Yafet
InGaAs
MOW
Spin-relaxation

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Electron spin-relaxation dynamics in GaAs/AlGaAs quantum wells and InGaAs/InP quantum wells. / Tackeuchi, Atsushi; Kuroda, Takamasa; Muto, Shunichi; Nishikawa, Yuji; Wada, Osamu.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 38, No. 8 B, 15.08.1999, p. 4680-4687.

Research output: Contribution to journal › Article › peer-review

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abstract = "We have investigated the spin-relaxation process of electrons at room temperature in undoped GaAs/AlGaAs multiple-quantum wells (MQWs) and InGaAs/InP MQWs. The spin-relaxation times are measured for different well thicknesses using time-resolved spin-dependent pump and probe absorption measurement. The spin-relaxation time, τs, for GaAs MQWs was found to depend on the electron confinement energy, E1e, according to τs ∝ E1e-2.2, demonstrating that the main spin-relaxation mechanism at room temperature is the D'yakonov-Perel' process. The measured spin-relaxation times of InGaAs MQWs whose band-gap is about half that of GaAs MQWs arc about 5 ps and vary depending on the quantum confinement energy, E1e, according to τs ∝ E1e-1.0. The spin-relaxation time by Elliott-Yafet process, which becomes stronger for narrower band-gap materials, is calculated for quantum wells and shown to vary according to τs ∝ E1e-1. The spin-relaxation mechanism and possible applications using this fast spin-relaxation process are discussed.",

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AU - Tackeuchi, Atsushi

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AU - Nishikawa, Yuji

AU - Wada, Osamu

PY - 1999/8/15

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N2 - We have investigated the spin-relaxation process of electrons at room temperature in undoped GaAs/AlGaAs multiple-quantum wells (MQWs) and InGaAs/InP MQWs. The spin-relaxation times are measured for different well thicknesses using time-resolved spin-dependent pump and probe absorption measurement. The spin-relaxation time, τs, for GaAs MQWs was found to depend on the electron confinement energy, E1e, according to τs ∝ E1e-2.2, demonstrating that the main spin-relaxation mechanism at room temperature is the D'yakonov-Perel' process. The measured spin-relaxation times of InGaAs MQWs whose band-gap is about half that of GaAs MQWs arc about 5 ps and vary depending on the quantum confinement energy, E1e, according to τs ∝ E1e-1.0. The spin-relaxation time by Elliott-Yafet process, which becomes stronger for narrower band-gap materials, is calculated for quantum wells and shown to vary according to τs ∝ E1e-1. The spin-relaxation mechanism and possible applications using this fast spin-relaxation process are discussed.

AB - We have investigated the spin-relaxation process of electrons at room temperature in undoped GaAs/AlGaAs multiple-quantum wells (MQWs) and InGaAs/InP MQWs. The spin-relaxation times are measured for different well thicknesses using time-resolved spin-dependent pump and probe absorption measurement. The spin-relaxation time, τs, for GaAs MQWs was found to depend on the electron confinement energy, E1e, according to τs ∝ E1e-2.2, demonstrating that the main spin-relaxation mechanism at room temperature is the D'yakonov-Perel' process. The measured spin-relaxation times of InGaAs MQWs whose band-gap is about half that of GaAs MQWs arc about 5 ps and vary depending on the quantum confinement energy, E1e, according to τs ∝ E1e-1.0. The spin-relaxation time by Elliott-Yafet process, which becomes stronger for narrower band-gap materials, is calculated for quantum wells and shown to vary according to τs ∝ E1e-1. The spin-relaxation mechanism and possible applications using this fast spin-relaxation process are discussed.

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Electron spin-relaxation dynamics in GaAs/AlGaAs quantum wells and InGaAs/InP quantum wells

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