Electron spin-relaxation dynamics in GaAs/AlGaAs quantum wells and InGaAs/InP quantum wells

Atsushi Tackeuchi; Takamasa Kuroda; Shunichi Muto; Yuji Nishikawa; Osamu Wada

doi:10.1143/jjap.38.4680

Electron spin-relaxation dynamics in GaAs/AlGaAs quantum wells and InGaAs/InP quantum wells

Atsushi Tackeuchi, Takamasa Kuroda, Shunichi Muto, Yuji Nishikawa, Osamu Wada

School of Advanced Science and Engineering

Research output: Contribution to journal › Article

58 Citations (Scopus)

Abstract

We have investigated the spin-relaxation process of electrons at room temperature in undoped GaAs/AlGaAs multiple-quantum wells (MQWs) and InGaAs/InP MQWs. The spin-relaxation times are measured for different well thicknesses using time-resolved spin-dependent pump and probe absorption measurement. The spin-relaxation time, τ_s, for GaAs MQWs was found to depend on the electron confinement energy, E_1e, according to τ_s ∝ E_1e^-2.2, demonstrating that the main spin-relaxation mechanism at room temperature is the D'yakonov-Perel' process. The measured spin-relaxation times of InGaAs MQWs whose band-gap is about half that of GaAs MQWs arc about 5 ps and vary depending on the quantum confinement energy, E_1e, according to τ_s ∝ E_1e^-1.0. The spin-relaxation time by Elliott-Yafet process, which becomes stronger for narrower band-gap materials, is calculated for quantum wells and shown to vary according to τ_s ∝ E_1e^-1. The spin-relaxation mechanism and possible applications using this fast spin-relaxation process are discussed.

Original language	English
Pages (from-to)	4680-4687
Number of pages	8
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	38
Issue number	8 B
DOIs	https://doi.org/10.1143/jjap.38.4680
Publication status	Published - 1999 Aug 15

Keywords

D'yakonov-Perel'
Electron
Elliott-Yafet
InGaAs
MOW
Spin-relaxation

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Tackeuchi, A., Kuroda, T., Muto, S., Nishikawa, Y., & Wada, O. (1999). Electron spin-relaxation dynamics in GaAs/AlGaAs quantum wells and InGaAs/InP quantum wells. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 38(8 B), 4680-4687. https://doi.org/10.1143/jjap.38.4680

Electron spin-relaxation dynamics in GaAs/AlGaAs quantum wells and InGaAs/InP quantum wells. / Tackeuchi, Atsushi; Kuroda, Takamasa; Muto, Shunichi; Nishikawa, Yuji; Wada, Osamu.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 38, No. 8 B, 15.08.1999, p. 4680-4687.

Research output: Contribution to journal › Article

@article{3cb3c828e16246dc9827dd67c76bb60a,

title = "Electron spin-relaxation dynamics in GaAs/AlGaAs quantum wells and InGaAs/InP quantum wells",

abstract = "We have investigated the spin-relaxation process of electrons at room temperature in undoped GaAs/AlGaAs multiple-quantum wells (MQWs) and InGaAs/InP MQWs. The spin-relaxation times are measured for different well thicknesses using time-resolved spin-dependent pump and probe absorption measurement. The spin-relaxation time, τs, for GaAs MQWs was found to depend on the electron confinement energy, E1e, according to τs ∝ E1e-2.2, demonstrating that the main spin-relaxation mechanism at room temperature is the D'yakonov-Perel' process. The measured spin-relaxation times of InGaAs MQWs whose band-gap is about half that of GaAs MQWs arc about 5 ps and vary depending on the quantum confinement energy, E1e, according to τs ∝ E1e-1.0. The spin-relaxation time by Elliott-Yafet process, which becomes stronger for narrower band-gap materials, is calculated for quantum wells and shown to vary according to τs ∝ E1e-1. The spin-relaxation mechanism and possible applications using this fast spin-relaxation process are discussed.",

keywords = "D'yakonov-Perel', Electron, Elliott-Yafet, InGaAs, MOW, Spin-relaxation",

author = "Atsushi Tackeuchi and Takamasa Kuroda and Shunichi Muto and Yuji Nishikawa and Osamu Wada",

year = "1999",

month = aug,

day = "15",

doi = "10.1143/jjap.38.4680",

language = "English",

volume = "38",

pages = "4680--4687",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "8 B",

}

TY - JOUR

T1 - Electron spin-relaxation dynamics in GaAs/AlGaAs quantum wells and InGaAs/InP quantum wells

AU - Tackeuchi, Atsushi

AU - Kuroda, Takamasa

AU - Muto, Shunichi

AU - Nishikawa, Yuji

AU - Wada, Osamu

PY - 1999/8/15

Y1 - 1999/8/15

N2 - We have investigated the spin-relaxation process of electrons at room temperature in undoped GaAs/AlGaAs multiple-quantum wells (MQWs) and InGaAs/InP MQWs. The spin-relaxation times are measured for different well thicknesses using time-resolved spin-dependent pump and probe absorption measurement. The spin-relaxation time, τs, for GaAs MQWs was found to depend on the electron confinement energy, E1e, according to τs ∝ E1e-2.2, demonstrating that the main spin-relaxation mechanism at room temperature is the D'yakonov-Perel' process. The measured spin-relaxation times of InGaAs MQWs whose band-gap is about half that of GaAs MQWs arc about 5 ps and vary depending on the quantum confinement energy, E1e, according to τs ∝ E1e-1.0. The spin-relaxation time by Elliott-Yafet process, which becomes stronger for narrower band-gap materials, is calculated for quantum wells and shown to vary according to τs ∝ E1e-1. The spin-relaxation mechanism and possible applications using this fast spin-relaxation process are discussed.

AB - We have investigated the spin-relaxation process of electrons at room temperature in undoped GaAs/AlGaAs multiple-quantum wells (MQWs) and InGaAs/InP MQWs. The spin-relaxation times are measured for different well thicknesses using time-resolved spin-dependent pump and probe absorption measurement. The spin-relaxation time, τs, for GaAs MQWs was found to depend on the electron confinement energy, E1e, according to τs ∝ E1e-2.2, demonstrating that the main spin-relaxation mechanism at room temperature is the D'yakonov-Perel' process. The measured spin-relaxation times of InGaAs MQWs whose band-gap is about half that of GaAs MQWs arc about 5 ps and vary depending on the quantum confinement energy, E1e, according to τs ∝ E1e-1.0. The spin-relaxation time by Elliott-Yafet process, which becomes stronger for narrower band-gap materials, is calculated for quantum wells and shown to vary according to τs ∝ E1e-1. The spin-relaxation mechanism and possible applications using this fast spin-relaxation process are discussed.

KW - D'yakonov-Perel'

KW - Electron

KW - Elliott-Yafet

KW - InGaAs

KW - MOW

KW - Spin-relaxation

UR - http://www.scopus.com/inward/record.url?scp=0033176797&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033176797&partnerID=8YFLogxK

U2 - 10.1143/jjap.38.4680

DO - 10.1143/jjap.38.4680

M3 - Article

AN - SCOPUS:0033176797

VL - 38

SP - 4680

EP - 4687

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 8 B

ER -